Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a plurality of nanostructures over a substrate, and a gate electrode surrounding the nanostructures. The semiconductor device structure includes a source/drain portion adjacent to the gate electrode, and a semiconductor layer between the gate electrode and the source/drain portion.

Abstract: A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.

Abstract: A method includes forming a dielectric layer over an epitaxial source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the epitaxial source/drain region. A barrier layer is formed on a sidewall and a bottom of the opening. An oxidation process is performing on the sidewall and the bottom of the opening. The oxidation process transforms a portion of the barrier layer into an oxidized barrier layer and transforms a portion of the dielectric layer adjacent to the oxidized barrier layer into a liner layer. The oxidized barrier layer is removed. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with the liner layer.

Abstract: A semiconductor device and a method of forming the same are provided. A semiconductor device according to an embodiment includes a P-type field effect transistor (PFET) and an N-type field effect transistor (NFET). The PFET includes a first gate structure formed over a substrate, a first spacer disposed on a sidewall of the first gate structure, and an unstrained spacer disposed on a sidewall of the first spacer. The NET includes a second gate structure formed over the substrate, the first spacer disposed on a sidewall of the second gate structure, and a strained spacer disposed on a sidewall of the first spacer.

Abstract: An open-type probe of a vertical probe card includes a frame, an elastic member, and a pin. The frame has an operation slot and two lateral openings being in spatial communication with the operation slot. The elastic member is assembled to the frame and is located in the operation slot. The pin includes an inner segment assembled in the operation slot and a contacting segment that protrudes from an opening of the operation slot. The pin abuts against the elastic member through the inner segment so as to be electrically coupled to the frame. The elastic member and the inner segment are arranged between the two lateral openings. The contacting segment is configured to abut against a device under test, so that the contacting segment is moved toward the operation slot to press the elastic member for deforming the elastic member to generate an elastic force.

Abstract: A tunnel-type probe includes a tube, an elastic member, and a pin. The elastic member is assembled in the tube. The pin is movably disposed through the tube, and is electrically coupled to the tube by being connected to the elastic member. The pin has an inner segment, a contacting segment, and a limiting segment, the latter two of which are connected to two ends of the inner segment. The inner segment is arranged in the tube and is connected to the elastic member. The contacting segment and the limiting segment are respectively located at two opposite sides of the tube. When the tunnel probe abuts against a device under test (DUT) through the contacting segment, the pin is moved in a direction away from the DUT, such that the elastic member is deformed from being pressed by the pin so as to generate an elastic force.

Abstract: A semiconductor device and a method of forming the same are provided. A semiconductor device according to an embodiment includes a P-type field effect transistor (PFET) and an N-type field effect transistor (NFET). The PFET includes a first gate structure formed over a substrate, a first spacer disposed on a sidewall of the first gate structure, and an unstrained spacer disposed on a sidewall of the first spacer. The NET includes a second gate structure formed over the substrate, the first spacer disposed on a sidewall of the second gate structure, and a strained spacer disposed on a sidewall of the first spacer.

Abstract: A BIOS backup/recovery system includes a chassis housing a BIOS backup/recovery subsystem coupled to a primary and a secondary BIOS storage system. The BIOS backup/recovery subsystem begins initialization operations and determines whether the primary BIOS storage system includes customized MAC addresses. If so, the BIOS backup/recovery subsystem determines whether MAC addresses in the secondary BIOS storage system match the customized MAC addresses in the primary BIOS storage system and, if not, performs a BIOS backup operation that includes copying the customized MAC addresses in the primary BIOS storage system to the secondary BIOS storage system. If not, the BIOS backup/recovery subsystem determines whether MAC addresses in the secondary BIOS storage system match default MAC addresses in the primary BIOS storage system and, if not, performs a BIOS recovery operation that includes copying customized MAC addresses in the secondary BIOS storage system to the primary BIOS storage system.

Abstract: The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.

Abstract: A method of inspecting an extreme ultraviolet (EUV) radiation source includes, in an idle mode, inserting a borescope mounted on a fixture through a first opening into a chamber of the EUV radiation source. The borescope includes a connection cable attached at a first end to a camera. The EUV radiation source includes an excitation laser that generates a light beam that is configured to focus onto tin droplets to generate EUV radiation inside the chamber of the EUV radiation source. The method further includes extending the extendible section, in a direction toward the second opening of the EUV radiation source, to move the camera beyond the blocking shield, and acquiring one or more images from a region beyond the blocking shield. The method also includes analyzing the one or more acquired images to determine an amount of tin debris deposited inside the chamber of the EUV radiation source.

Abstract: The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.

Abstract: A BIOS backup/recovery system includes a chassis housing a BIOS backup/recovery subsystem coupled to a primary and a secondary BIOS storage system. The BIOS backup/recovery subsystem begins initialization operations and determines whether the primary BIOS storage system includes customized MAC addresses. If so, the BIOS backup/recovery subsystem determines whether MAC addresses in the secondary BIOS storage system match the customized MAC addresses in the primary BIOS storage system and, if not, performs a BIOS backup operation that includes copying the customized MAC addresses in the primary BIOS storage system to the secondary BIOS storage system. If not, the BIOS backup/recovery subsystem determines whether MAC addresses in the secondary BIOS storage system match default MAC addresses in the primary BIOS storage system and, if not, performs a BIOS recovery operation that includes copying customized MAC addresses in the secondary BIOS storage system to the primary BIOS storage system.

Abstract: A method for using an extreme ultraviolet radiation source is provided. The method includes performing a lithography process using an extreme ultraviolet (EUV) radiation source; after the lithography processes, inserting an extraction tube into a vessel of the EUV radiation source; and cleaning a collector of the EUV radiation source by using the extraction tube.

Abstract: A hole anchor has a plug. An anchor shaft and a cord respectively pass through a center and a periphery of the plug. A top end and a bottom end of the anchor shaft respectively have a head and an annular structure. A spring is disposed between the annular structure and the plug. Two side rods of an anchor head assembly are juxtaposed respectively on a left side and a right side of the head. Two sides of each of the side rods respectively have a closed end and an open end. The two closed ends are engaged with each other via a concave-convex structure. A top side of each of the two open ends is pivotally connected to a pin connected to the cord. A pivot unit pivotally penetrates a middle of the two side rods and the head.

Abstract: In a method of inspecting an extreme ultraviolet (EUV) radiation source, during an idle mode, a borescope mounted on a fixture is inserted through a first opening into a chamber of the EUV radiation source. The borescope includes a connection cable attached at a first end to a camera. The fixture includes an extendible section mounted from a first side on a lead screw, and the camera of the borescope is mounted on a second side, opposite to the first side, of the extendible section. The extendible section is extended to move the camera inside the chamber of the EUV radiation source. One or more images are acquired by the camera from inside the chamber of the EUV radiation source at one or more viewing positions. The one or more acquired images are analyzed to determine an amount of tin debris deposited inside the chamber of the EUV radiation source.

Abstract: The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.

Abstract: Disclosed herein are novel polyhydroxylated indolizidine and pyrrolizidine derivates and methods for using the same in the treatment of cancer. The present polyhydroxylated indolizidine and pyrrolizidine derivates has the structure of formula (I), wherein: X is O or b and c are independently an integral of 0 or and 1; R is selected from the group consisting of H, C1-6 alkyl, alkenyl, alkynyl, aryl, heteroaryl, cycloalkyl, cycloalkenyl, aralkyl, aralkenyl, aralkynyl, heteroaralkyl, heteroaralkenyl, beteroaralkynyl, heterocyclyl, alkoxy, aryloxy, and sulfonyl.

Abstract: Disclosed herein are novel uses of ADMDP stereoisomers or their derivatives for the manufacture of a medicament for treating Pompe disease. Accordingly, the present disclosure provides a method of treating Pompe disease in a subject. The method includes the step of, administering to the subject a therapeutically effective amount of a compound of formula (I), or a salt, an ester or a solvate thereof, wherein R1 and R2 are independently H or alkyl optionally substituted by —NH2 or —OH, so as to ameliorate, alleviate mitigate and/or prevent symptoms associated with the Pompe disease. According to certain embodiments of the present disclosure, the compound of formula (I) may serve a stabilizer of ?-glucosidase via preventing its denaturalization of deactivation.

Abstract: Disclosed herein are novel uses of a polyhydroxylated pyrrolidine for the manufacture of a medicament for treating Fabry disease (FD). Accordingly, the present disclosure provides a method of treating a subject having or suspected of having FD. The method includes the step of, administering to the subject a therapeutically effective amount of a compound of formula (I), a salt, an ester or a solvate thereof, wherein: R1 is H, or C1-3 amine optionally substituted with —COR2; R2 is alkyl or alkene optionally substituted with cycloalkyl or phenyl having at least one substituent selected from the group consisting of, halo, alkyl, haloalkyl, and alkoxyl; so as to ameliorate, alleviate mitigate and/or prevent symptoms associated with the FD. According to preferred embodiments of the present disclosure, the compound of formula (I) is a chaperon of a mutated human lysosomal ?-galactosidase A (?-Gal A).

Abstract: Disclosed herein are novel uses of a polyhydroxylated pyrrolidine for the manufacture of a medicament for treating Fabry disease (FD). Accordingly, the present disclosure provides a method of treating a subject having or suspected of having FD. The method includes the step of, administering to the subject a therapeutically effective amount of a compound of formula (I), a salt, an ester or a solvate thereof, wherein: R1 is H, or C1-3 amine optionally substituted with —COR2; R2 is alkyl or alkene optionally substituted with cycloalkyl or phenyl having at least one substituent selected from the group consisting of, halo, alkyl, haloalkyl, and alkoxyl; so as to ameliorate, alleviate mitigate and/or prevent symptoms associated with the FD. According to preferred embodiments of the present disclosure, the compound of formula (I) is a chaperon of a mutated human lysosomal ?-galactosidase A (?-Gal A).