Patents by Inventor Wei-Chieh Hsuch

Wei-Chieh Hsuch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating polysilicon film by nickel/copper induced lateral crystallization
    Patent number: 6787434
    Abstract: The present invention relates to a method of fabricating polysilicon film by Nickel and Copper induced lateral crystallization for the TFT-LCD, comprising the step of: a) a thin (˜4 nm) Copper and Nickel being evaporated onto the substrate; b) a amorphous-silicon film (˜50 nm) being evaporated onto thereof obtained according to a); c) applying annealing at less than 600° C. to thereof obtained according to b) for fast fabricating poly-silicon film. It is approximately 10 times faster than that of Ni induced polysilicon. The present invention is to provide a low-temperature (<600° C.) fast growth rate process to convert the hydrogenated amorphous silicon (a-Si:H) films to polysilicon film for substantially time-saving process and industrial applicability.
    Type: Grant
    Filed: May 2, 2003
    Date of Patent: September 7, 2004
    Assignee: National Taiwan University
    Inventors: Si-Chen Lee, Wei-Chieh Hsuch, Chi-Chieh Chen