Patents by Inventor Wei-Chien CHIANG

Wei-Chien CHIANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12198986
    Abstract: A semiconductor structure includes a fin disposed on a substrate, the fin including a channel region comprising a plurality of channels vertically stacked over one another, the channels comprising germanium distributed therein. The semiconductor structure further includes a gate stack engaging the channel region of the fin and gate spacers disposed between the gate stack and the source and drain regions of the fin, wherein each channel of the channels includes a middle section wrapped around by the gate stack and two end sections engaged by the gate spacers, wherein a concentration of germanium in the middle section of the channel is higher than a concentration of germanium in the two end sections of the channel, and wherein the middle section of the channel further includes a core portion and an outer portion surrounding the core portion with a germanium concentration profile from the core portion to the outer portion.
    Type: Grant
    Filed: August 7, 2023
    Date of Patent: January 14, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wei-Sheng Yun, Chih-Hao Wang, Jui-Chien Huang, Kuo-Cheng Chiang, Chih-Chao Chou, Chun-Hsiung Lin, Pei-Hsun Wang
  • Patent number: 12148783
    Abstract: Various embodiments of the present disclosure are directed towards an image sensor device including a first image sensor element and a second image sensor element disposed within a substrate. An interconnect structure is disposed along a front-side surface of the substrate and comprises a plurality of conductive wires, a plurality of conductive vias, and a first absorption structure. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second image sensor element is configured to generate electrical signals from the electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. The second image sensor element is laterally adjacent to the first image sensor element. Further, the first image sensor element overlies the first absorption structure and is spaced laterally between opposing sidewalls of the first absorption structure.
    Type: Grant
    Filed: March 30, 2021
    Date of Patent: November 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Keng-Yu Chou, Cheng Yu Huang, Chun-Hao Chuang, Wen-Hau Wu, Wei-Chieh Chiang, Wen-Chien Yu, Chih-Kung Chang
  • Publication number: 20150287874
    Abstract: A metal template structure at least includes a frame, a supporting stainless wire cloth is disposed at an inner edge of the frame, a metal template is disposed on the supporting stainless wire cloth, and falling holes arranged in a printing shape are disposed on the metal template. The present invention is characterized in that: a feeding guide portion extends upwards from an upper periphery of each falling hole, an aperture of the feeding guide portion is greater than an aperture of the falling hole, and a periphery of the feeding guide portion and a periphery of the falling hole are connected in different forms such as a right angle surface, an inclined surface or a concave surface. By using a large aperture of the feeding guide portion and increasing the feeding guide portion, the thickness of the metal template is increased, so that more slurry can pass through the falling holes smoothly during printing, thereby achieving optimal falling effect.
    Type: Application
    Filed: April 3, 2015
    Publication date: October 8, 2015
    Inventors: Yi-Yang LIN, Wei-Chien CHIANG