Patents by Inventor Wei-Chih Peng
Wei-Chih Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11935981Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.Type: GrantFiled: June 30, 2021Date of Patent: March 19, 2024Assignee: EPISTAR CORPORATIONInventors: Chu-Jih Su, Chia-Hsiang Chou, Wei-Chih Peng, Wen-Luh Liao, Chao-Shun Huang, Hsuan-Le Lin, Shih-Chang Lee, Mei Chun Liu, Chen Ou
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Patent number: 11679480Abstract: A fastening tool having a latch mechanism that performs a tool-free jam release of a jammed fastener in the nosepiece. The latch mechanism includes a latch plate that is secured to the nose portion of a nosepiece assembly by a latch member and is pivotably releasable from the nose portion by a user's fingers.Type: GrantFiled: June 2, 2020Date of Patent: June 20, 2023Assignee: Black & Decker, Inc.Inventors: Wei-Chih Peng, Yao-Te Yang
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Patent number: 11607786Abstract: A fastening tool having a depth adjustment mechanism mounted on a longitudinally movable door of a nosepiece assembly. The depth adjustment mechanism including a depth adjustment wheel having an internal threaded section extending along an axis and being rotatable about said axis; and an adjustment screw disposed within the depth adjustment wheel and engaging the door plate, the adjustment screw having an external threaded section that engages the internal threaded section of the depth adjustment wheel, so that a rotational movement of the depth adjustment wheel with respect to the adjustment screw effects a relative axial movement of the adjustment screw and the longitudinal movement of the door to increase and decrease the depth that a fastener is driven into a workpiece.Type: GrantFiled: March 1, 2019Date of Patent: March 21, 2023Assignee: Black & Decker, Inc.Inventors: Wei-Chih Peng, Yao-Te Yang
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Patent number: 11407094Abstract: A fastening tool having a low nail lockout mechanism pivotably mounted to the magazine assembly that prevents the tool from driving a fastener with there are less than a predetermined number of fasteners in the magazine.Type: GrantFiled: April 8, 2019Date of Patent: August 9, 2022Assignee: Black & Decker, Inc.Inventors: Wei-Chih Peng, Kuo-Sheng Shih
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Patent number: 11245060Abstract: A semiconductor device comprising: a substrate; a first reflector on the substrate; a second reflector on the first reflector; a semiconductor system directly contacting the first reflector and the second reflector and comprising a first side wall; and an insulating layer covering the first side wall and formed between the substrate and the first reflector.Type: GrantFiled: November 15, 2018Date of Patent: February 8, 2022Assignee: EPISTAR CORPORATIONInventors: Chih-Chiang Lu, Wei-Chih Peng, Shiau-Huei San, Min-Hsun Hsieh
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Publication number: 20210408311Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.Type: ApplicationFiled: June 30, 2021Publication date: December 30, 2021Inventors: Chu-Jih SU, Chia-Hsiang CHOU, Wei-Chih PENG, Wen-Luh LIAO, Chao-Shun HUANG, Hsuan-Le LIN, Shih-Chang LEE, Mei Chun LIU, Chen OU
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Publication number: 20210278382Abstract: A measurement apparatus for gas sensor includes a wafer-holding module and a vacuuming module. The wafer-holding module includes a holding carrier configured to hold a wafer. The holding carrier includes an uppermost surface, a bottommost surface, an outermost side surface between the uppermost surface and the bottommost surface, a plurality of grooves, and a plurality of through holes. The vacuuming module couples to the plurality of through holes and is configured to generate a negative pressure to attach the gas-sensing cell to the holding carrier. The wafer includes at least one uncut gas-sensing cell. At least one gas-sensing cell has a cavity located right above at least one of the grooves. The grooves extend downwardly from the uppermost surface and not reaching the bottommost surface. The grooves extend outwardly in a horizontal direction to expose out of the outermost side surface.Type: ApplicationFiled: March 31, 2020Publication date: September 9, 2021Inventor: Wei-Chih PENG
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Publication number: 20210199610Abstract: A gas sensor includes a substrate, an oxidization stack, a heating element, a sensing circuit, and a gas sensing element. The substrate has a first surface, a second surface opposite to the first surface, and a groove. The oxidization stack is on the substrate, and has a third surface and a fourth surface opposite to the third surface. The heating element is embedded in the oxidization stack. The sensing circuit is embedded in the oxidization stack. A distance between the sensing circuit and the fourth surface is shorter than a distance between the heating element and the fourth surface. The gas sensing element is located on the oxidization stack and coupled to the sensing circuit. The substrate and the oxidization stack collectively define a cavity substantially underneath the gas sensing element. The groove penetrates the substrate and extends outwardly from the cavity.Type: ApplicationFiled: March 31, 2020Publication date: July 1, 2021Inventor: Wei-Chih PENG
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Publication number: 20200398414Abstract: A fastening tool having a depth adjustment mechanism mounted on a longitudinally movable door of a nosepiece assembly. The depth adjustment mechanism including a depth adjustment wheel having an internal threaded section extending along an axis and being rotatable about said axis; and an adjustment screw disposed within the depth adjustment wheel and engaging the door plate, the adjustment screw having an external threaded section that engages the internal threaded section of the depth adjustment wheel, so that a rotational movement of the depth adjustment wheel with respect to the adjustment screw effects a relative axial movement of the adjustment screw and the longitudinal movement of the door to increase and decrease the depth that a fastener is driven into a workpiece.Type: ApplicationFiled: March 1, 2019Publication date: December 24, 2020Inventors: Wei-Chih Peng, Yao-Te Yang
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Publication number: 20200290191Abstract: A fastening tool having a latch mechanism that performs a tool-free jam release of a jammed fastener in the nosepiece. The latch mechanism includes a latch plate that is secured to the nose portion of a nosepiece assembly by a latch member and is pivotably releasable from the nose portion by a user's fingers.Type: ApplicationFiled: June 2, 2020Publication date: September 17, 2020Inventors: Wei-Chih Peng, Yao-Te Yang
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Publication number: 20200156226Abstract: A fastening tool having a low nail lockout mechanism pivotably mounted to the magazine assembly that prevents the tool from driving a fastener with there are less than a predetermined number of fasteners in the magazine.Type: ApplicationFiled: April 8, 2019Publication date: May 21, 2020Inventors: Wei-Chih Peng, Kuo-Sheng Shih
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Patent number: 10573778Abstract: The present disclosure provides a semiconductor device including a carrier; a current blocking layer, formed on the carrier; a function structure, formed on the current blocking layer and comprising a surface opposite to the current blocking layer; a protective structure, formed on the function structure and exposing a portion of the surface; and an electrode, formed on the protective structure and exposing the portion of the surface.Type: GrantFiled: January 15, 2019Date of Patent: February 25, 2020Assignee: EPISTAR CORPORATIONInventors: Chih-Hao Chen, Yi-Lun Chou, Wei-Chih Peng
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Patent number: 10559717Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween, wherein the first semiconductor layer includes a surrounding exposed region not covered by the active layer, and the surrounding exposed region surrounds the active layer; a conductive layer formed on the second semiconductor layer, including a first conductive region extending toward and contacting the surrounding exposed region of the first semiconductor layer; an electrode layer formed on the first conductive region in the surrounding exposed region; an outside insulating layer covering a portion of the conductive layer and the electrode layer, and including a first opening exposing the other portion of the conductive layer; a bonding layer covering the outside insulating layer and electrically connecting to the other portion of the conductive layer through the first opening; and a conductive substrate, wType: GrantFiled: November 13, 2018Date of Patent: February 11, 2020Assignee: EPISTAR CORPORATIONInventors: Chun-Teng Ko, Chao-Hsing Chen, Jia-Kuen Wang, Yen-Liang Kuo, Chih-Hao Chen, Wei-Jung Chung, Chih-Ming Wang, Wei-Chih Peng, Schang-Jing Hon, Yu-Yao Lin
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Publication number: 20190165206Abstract: The present disclosure provides a semiconductor device including a carrier; a current blocking layer, formed on the carrier; a function structure, formed on the current blocking layer and comprising a surface opposite to the current blocking layer; a protective structure, formed on the function structure and exposing a portion of the surface; and an electrode, formed on the protective structure and exposing the portion of the surface.Type: ApplicationFiled: January 15, 2019Publication date: May 30, 2019Inventors: Chih-Hao CHEN, Yi-Lun CHOU, Wei-Chih PENG
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Patent number: 10304993Abstract: The present invention discloses a light-emitting device and the manufacturing method thereof. The light-emitting device comprises: a substrate including a protrusion part and a base part; a lattice buffer layer formed on the substrate and including a first region substantially right above the protrusion part and a second region substantially right above the base part, wherein the first region includes a recess therein; a light-emitting stack formed on the lattice buffer layer and the recess; and electrodes formed on and electrically connected to the light-emitting stack.Type: GrantFiled: January 5, 2018Date of Patent: May 28, 2019Assignee: EPISTAR CORPORATIONInventors: Yung-Hsiang Lin, Wei-Chih Peng
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Publication number: 20190103515Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween, wherein the first semiconductor layer includes a surrounding exposed region not covered by the active layer, and the surrounding exposed region surrounds the active layer; a conductive layer formed on the second semiconductor layer, including a first conductive region extending toward and contacting the surrounding exposed region of the first semiconductor layer; an electrode layer formed on the first conductive region in the surrounding exposed region; an outside insulating layer covering a portion of the conductive layer and the electrode layer, and including a first opening exposing the other portion of the conductive layer; a bonding layer covering the outside insulating layer and electrically connecting to the other portion of the conductive layer through the first opening; and a conductive substrate, wType: ApplicationFiled: November 13, 2018Publication date: April 4, 2019Inventors: Chun-Teng Ko, Chao-Hsing Chen, Jia-Kuen Wang, Yen-Liang Kuo, Chih-Hao Chen, Wei-Jung Chung, Chih-Ming Wang, Wei-Chih Peng, Schang-Jing Hon, Yu-Yao Lin
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Publication number: 20190103535Abstract: A semiconductor device comprising: a substrate; a first reflector on the substrate; a second reflector on the first reflector; a semiconductor system directly contacting the first reflector and the second reflector and comprising a first side wall; and an insulating layer covering the first side wall and formed between the substrate and the first reflector.Type: ApplicationFiled: November 15, 2018Publication date: April 4, 2019Inventors: Chih-Chiang LU, Wei-Chih PENG, Shiau-Huei SAN, Min-Hsun HSIEH
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Patent number: 10217895Abstract: The present disclosure provides a method of forming a light-emitting device comprising: providing a growth substrate having a front side and a rear side; forming a sacrificial layer on the front side of the growth substrate; forming a protective structure on the sacrificial layer; forming a light-emitting structure on the protective structure, wherein the light-emitting structure emits a first peak wavelength; providing a carrier; joining the carrier and the light-emitting structure; and transforming the sacrificial layer by irradiating a laser beam from the rear side to separate the growth substrate from the light-emitting structure, wherein the laser beam emits a second peak wavelength, and wherein the protective structure reflects the second peak wavelength away from the light-emitting structure.Type: GrantFiled: June 22, 2017Date of Patent: February 26, 2019Assignee: EPISTAR CORPORATIONInventors: Chih-hao Chen, Yi-Lun Chou, Wei-Chih Peng
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Publication number: 20180374985Abstract: The present disclosure provides a method of forming a light-emitting device comprising: providing a growth substrate having a front side and a rear side; forming a sacrificial layer on the front side of the growth substrate; forming a protective structure on the sacrificial layer; forming a light-emitting structure on the protective structure, wherein the light-emitting structure emits a first peak wavelength; providing a carrier; joining the carrier and the light-emitting structure; and transforming the sacrificial layer by irradiating a laser beam from the rear side to separate the growth substrate from the light-emitting structure, wherein the laser beam emits a second peak wavelength, and wherein the protective structure reflects the second peak wavelength away from the light-emitting structure.Type: ApplicationFiled: June 22, 2017Publication date: December 27, 2018Inventors: Chih-hao CHEN, Yi-Lun CHOU, Wei-Chih PENG
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Patent number: 10153398Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a surrounding exposed region formed on peripheries of the semiconductor stack, exposing a surface of the first semiconductor layer; a conductive layer formed on the second semiconductor layer, including a first conductive region extending toward and contacting the surface of the first semiconductor layer in the surrounding exposed region; an electrode layer formed on the surrounding exposed region, surrounding the semiconductor stack, contacting the conductive layer and including an electrode pad not overlapping the semiconductor stack; an outside insulating layer covering a portion of the conductive layer and the electrode layer, including a first opening exposing the other portion of the conductive layer; a bonding layer covering the outside insulating layer and electrically connecting to the other portion of the conductive layer through the firsType: GrantFiled: November 1, 2017Date of Patent: December 11, 2018Assignee: EPISTAR CORPORATIONInventors: Chun-Teng Ko, Chao-Hsing Chen, Jia-Kuen Wang, Yen-Liang Kuo, Chih-Hao Chen, Wei-Jung Chung, Chih-Ming Wang, Wei-Chih Peng, Schang-Jing Hon, Yu-Yao Lin