Patents by Inventor Wei Chin

Wei Chin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ultra high vacuum cryogenic pumping apparatus with nanostructure material
    Patent number: 11111910
    Abstract: Cryogenic pump apparatuses include nanostructure material to achieve an ultra-high vacuum level. The nanostructure material can be mixed with either an adsorbent material or a fixed glue layer which is utilized to fix the adsorbent material. The nanostructure material's good thermal conductivity and adsorption properties help to lower working temperature and extend regeneration cycle of the cryogenic pumps.
    Type: Grant
    Filed: December 3, 2018
    Date of Patent: September 7, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Surendra Babu Anantharaman, Wen-Cheng Yang, Chung-En Kao, Victor Y. Lu, Wei Chin
  • ULTRA HIGH VACUUM CRYOGENIC PUMPING APPARATUS WITH NANOSTRUCTURE MATERIAL
    Publication number: 20190101110
    Abstract: Cryogenic pump apparatuses include nanostructure material to achieve an ultra-high vacuum level. The nanostructure material can be mixed with either an adsorbent material or a fixed glue layer which is utilized to fix the adsorbent material. The nanostructure material's good thermal conductivity and adsorption properties help to lower working temperature and extend regeneration cycle of the cryogenic pumps.
    Type: Application
    Filed: December 3, 2018
    Publication date: April 4, 2019
    Inventors: Surendra Babu Anantharaman, Wen-Cheng Yang, Chung-En Kao, Victor Y. Lu, Wei Chin
  • Ultra high vacuum cryogenic pumping apparatus with nanostructure material
    Patent number: 10145371
    Abstract: Cryogenic pump apparatuses include nanostructure material to achieve an ultra-high vacuum level. The nanostructure material can be mixed with either an adsorbent material or a fixed glue layer which is utilized to fix the adsorbent material. The nanostructure material's good thermal conductivity and adsorption properties help to lower working temperature and extend regeneration cycle of the cryogenic pumps.
    Type: Grant
    Filed: October 22, 2013
    Date of Patent: December 4, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Surendra Babu Anantharaman, Wen-Cheng Yang, Chung-En Kao, Victor Y. Lu, Wei Chin
  • Ultra High Vacuum Cryogenic Pumping Apparatus with Nanostructure Material
    Publication number: 20150107273
    Abstract: Cryogenic pump apparatuses include nanostructure material to achieve an ultra-high vacuum level. The nanostructure material can be mixed with either an adsorbent material or a fixed glue layer which is utilized to fix the adsorbent material. The nanostructure material's good thermal conductivity and adsorption properties help to lower working temperature and extend regeneration cycle of the cryogenic pumps.
    Type: Application
    Filed: October 22, 2013
    Publication date: April 23, 2015
    Inventors: Surendra Babu Anantharaman, Wen-Cheng Yang, Chung-En Kao, Victor Y. Lu, Wei Chin