Patents by Inventor Wei-Chin Hung

Wei-Chin Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240161672
    Abstract: An electronic circuit including a plurality of common terminals, a first circuit, a second circuit, and a plurality of switch units is provided. The first circuit is configured to output display driving signals to data lines of a display panel via the common terminals. The second circuit is configured to receive fingerprint sensing signals from fingerprint sensing lines of the display panel via the common terminals. Each of the switch units includes a first terminal coupled to one of the common terminals and a plurality of second terminals coupled to the first circuit and the second circuit. The switch units are grouped into a plurality of groups, and each group corresponds to a fingerprint sensing channel of the second circuit.
    Type: Application
    Filed: January 24, 2024
    Publication date: May 16, 2024
    Applicant: Novatek Microelectronics Corp.
    Inventors: Huan-Teng Cheng, Ting-Hsuan Hung, Tzu-Wen Hsieh, Wei-Lun Shih, Huang-Chin Tang
  • Patent number: 11935957
    Abstract: Semiconductor device structures having gate structures with tunable threshold voltages are provided. Various geometries of device structure can be varied to tune the threshold voltages. In some examples, distances from tops of fins to tops of gate structures can be varied to tune threshold voltages. In some examples, distances from outermost sidewalls of gate structures to respective nearest sidewalls of nearest fins to the respective outermost sidewalls (which respective gate structure overlies the nearest fin) can be varied to tune threshold voltages.
    Type: Grant
    Filed: August 9, 2021
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Chiang Wu, Wei-Chin Lee, Shih-Hang Chiu, Chia-Ching Lee, Hsueh Wen Tsau, Cheng-Yen Tsai, Cheng-Lung Hung, Da-Yuan Lee, Ching-Hwanq Su
  • Patent number: 11935452
    Abstract: An electronic circuit for operating with a display panel including touch sensors and fingerprint sensors is provided. The electronic circuit includes a first circuit, a second circuit, a third circuit, a first switch circuit and a control circuit. The first circuit generates display driving signals for driving the display panel. The second circuit receives fingerprint sensing signals from the fingerprint sensors. The third circuit determines a touch information according to touch sensing signals from the touch sensors. The first switch circuit includes a plurality of first switch units, each of the first switch units includes a first switch element and a second switch element. The control circuit controls the first switch circuit to transmit the display driving signals in a first time interval, controls the first switch circuit to transmit the fingerprint sensing signals in a second time interval, and controls the third circuit to receive the fingerprint sensing signals in a third time interval.
    Type: Grant
    Filed: February 17, 2023
    Date of Patent: March 19, 2024
    Assignee: Novatek Microelectronics Corp.
    Inventors: Huan-Teng Cheng, Ting-Hsuan Hung, Tzu-Wen Hsieh, Wei-Lun Shih, Huang-Chin Tang
  • Publication number: 20240084483
    Abstract: A liquid color masterbatch composition for fabricating a colored fiber includes 5 parts by weight to 45 parts by weight of a colorant, 40 parts by weight to 94 parts by weight of a carrier, and 1 part by weight to 15 parts by weight of a lubricant, in which a chemical structure of the lubricant includes a carbonyl group and an amine group.
    Type: Application
    Filed: February 6, 2023
    Publication date: March 14, 2024
    Inventors: Rih-Sheng CHIANG, Wei-Jen LAI, Huang-Chin HUNG
  • Publication number: 20080299700
    Abstract: A method of fabricating photodiode includes: a substrate comprising a well is provided, next, a first doping region is formed in the well, following that a conductive layer is formed on the surface of the first doping region by an epitaxial growth process, meanwhile, the conductive layer is in-situ doped to form a second doping region in the conductive layer. The method for fabricating the photodiode in the present invention can prevent the lattice structure from being damaged during the high dozes implantation process. Therefore, the dark current can be reduced and the sensitivity of the photodiode will be increased.
    Type: Application
    Filed: May 28, 2007
    Publication date: December 4, 2008
    Inventors: Bang-Chiang Lan, Tzung-I Su, Chien-Nan Kuo, Chao-An Su, Heng-Ching Lin, Shih-Wei Li, Wei-Chin Hung