Patents by Inventor Wei Ching Huang

Wei Ching Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS TO REGULATE GLYCOLYSIS VIA TARGETING EXTRACELLULAR ALPHA-ENOLASE FOR TREATING HUMAN DISEASES
    Publication number: 20250243294
    Abstract: Provided are identifies new methods for regulating (or reprogramming) glycolytic reaction by using alpha-enolase (ENO-1) antagonist or agonist. More specifically, provided are methods for glycolysis reprogramming by targeting extracellular ENO-1 or membrane-associated ENO-1.
    Type: Application
    Filed: November 24, 2022
    Publication date: July 31, 2025
    Inventors: TA-TUNG YUAN, WEI-CHING HUANG, I-CHE CHUNG
  • USE OF ALPHA-ENOLASE ANTAGONIST IN TREATING OF FIBROTIC DISEASES
    Publication number: 20250075005
    Abstract: Provided is the use of an effective amount of alpha-enolase (enolase-1, ENO-1) antagonist in manufacturing a medicament for treating a fibrotic disease. ENO-1 antagonist significantly attenuated body weight loss and lung weight gain as well as the fibrosis lesion and collagen deposition in lungs. Also, ENO-1 antagonist significantly reduced cell migration and secretion of collagen and TGF-? in primary mouse lung myofibroblasts.
    Type: Application
    Filed: August 19, 2022
    Publication date: March 6, 2025
    Inventors: TA-TUNG YUAN, WEI-CHING HUANG, I-CHE CHUNG, CHI-FEN CHUANG, MAO-LIN CHEN, YUNG-TSANG HUANG
  • USE OF ALPHA-ENOLASE ANTAGONIST FOR TREATING ANGIOGENESIS-RELATED DISEASES
    Publication number: 20250034278
    Abstract: Provided herein are methods for treating an angiogenesis-related disease comprising administration to a subject in need thereof an effective amount of alpha-enolase (enolase-1. ENO-1) antagonist.
    Type: Application
    Filed: January 17, 2023
    Publication date: January 30, 2025
    Inventors: Ta-Tung YUAN, WEI-CHING HUANG
  • Capacitors with electrodes having a portion of material removed, and related semiconductor devices, systems, and methods
    Patent number: 12193208
    Abstract: A DRAM capacitor may include a first capacitor electrode, a capacitor dielectric adjacent to the first capacitor electrode, and a second capacitor electrode adjacent to the capacitor dielectric. The first capacitor electrode may include a lower portion, an upper portion, and a step transition between the lower portion and the upper portion, a width of the upper portion of the first capacitor electrode at the step transition is less than a width of the lower portion of the first capacitor electrode at the step transition. Semiconductor devices, systems, and methods are also disclosed.
    Type: Grant
    Filed: January 13, 2022
    Date of Patent: January 7, 2025
    Assignee: Micron Technology, Inc.
    Inventors: Devesh Dadhich Shreeram, Kangle Li, Matthew N. Rocklein, Wei Ching Huang, Ping-Cheng Hsu, Sevim Korkmaz, Sanjeev Sapra, An-Jen B. Cheng
  • CAPACITORS WITH ELECTRODES HAVING A PORTION OF MATERIAL REMOVED, AND RELATED SEMICONDUCTOR DEVICES, SYSTEMS, AND METHODS
    Publication number: 20220238532
    Abstract: A DRAM capacitor may include a first capacitor electrode, a capacitor dielectric adjacent to the first capacitor electrode, and a second capacitor electrode adjacent to the capacitor dielectric. The first capacitor electrode may include a lower portion, an upper portion, and a step transition between the lower portion and the upper portion, a width of the upper portion of the first capacitor electrode at the step transition is less than a width of the lower portion of the first capacitor electrode at the step transition. Semiconductor devices, systems, and methods are also disclosed.
    Type: Application
    Filed: January 13, 2022
    Publication date: July 28, 2022
    Inventors: Devesh Dadhich Shreeram, Kangle Li, Matthew N. Rocklein, Wei Ching Huang, Ping-Cheng Hsu, Sevim Korkmaz, Sanjeev Sapra, An-Jen B. Cheng