Abstract: A Rugged portable device comprises: a base, a cover pivotally connected to the base, a first antenna unit, a second antenna unit, and a control unit. The first antenna unit and the second antenna unit are respectively disposed at an edge of the cover and an edge of the base, and the first antenna unit and the second antenna unit respectively have a near-field antenna and a far-field antenna. When the cover pivots relative to the base and is close to the base, the near-field antenna disposed at the cover and the near-field antenna disposed at the base generate a near-field communication (NFC) sensing signal and the near-field communication sensing signal is transmitted to the control unit. Therefore, the control unit sets up one of functions in the rugged portable device. For instance, the control unit switches off and/or switches on the far-field antenna or a peripheral unit (a keyboard or a camera).

Abstract: A slide rail assembly includes a first rail, a second rail, and an auxiliary member. The first rail includes a passage, and the passage includes a passage opening. The second rail is inserts in the passage from the passage opening through being guided by the auxiliary member.

Abstract: A semiconductor die package includes an inductor-capacitor (LC) semiconductor die that is directly bonded with a logic semiconductor die. The LC semiconductor die includes inductors and capacitors that are integrated into a single die. The inductors and capacitors of the LC semiconductor die may be electrically connected with transistors and other logic components on the logic semiconductor die to form a voltage regulator circuit of the semiconductor die package. The integration of passive components (e.g., the inductors and capacitors) of the voltage regulator circuit into a single semiconductor die reduces signal propagation distances in the voltage regulator circuit, which may increase the operating efficiency of the voltage regulator circuit, may reduce the formfactor for the semiconductor die package, may reduce parasitic capacitance and/or may reduce parasitic inductance in the voltage regulator circuit (thereby improving the performance of the voltage regulator circuit), among other examples.

Abstract: A slide rail assembly includes a first rail, a second rail, a slide-facilitating device, and a working member. The second rail is movably mounted in a channel of, and is displaceable with respect to, the first rail. The slide-facilitating device is movably mounted between the rails and includes an engaging feature. The working member is provided on the first rail and includes a main body portion, an elastic portion for supporting the main body portion, and a predetermined portion connected to the main body portion. The first rail includes a supporting portion for supporting the elastic portion of the working member. The engaging feature is engaged with the predetermined portion of the working member when the slide-facilitating device is at a predetermined position.

Abstract: A slide rail assembly includes a first rail, a second rail, a slide-facilitating device, and a retaining member. The second rail is movably mounted in a channel of, and is longitudinally displaceable with respect to, the first rail. The slide-facilitating device is movably mounted between the rails and includes an engaging feature. The retaining member is provided on the first rail and includes an elastic portion with a predetermined feature. The first rail includes a limiting feature for preventing deformation of the elastic portion. When the second rail is moved out of the channel after displacement in an opening direction with respect to the first rail, the slide-facilitating device is at a predetermined position, with the engaging feature engaged with the predetermined feature.

Abstract: Methods and structures for modulating an inner spacer profile include providing a fin having an epitaxial layer stack including a plurality of semiconductor channel layers interposed by a plurality of dummy layers. In some embodiments, the method further includes removing the plurality of dummy layers to form a first gap between adjacent semiconductor channel layers of the plurality of semiconductor channel layers. Thereafter, in some examples, the method includes conformally depositing a dielectric layer to substantially fill the first gap between the adjacent semiconductor channel layers. In some cases, the method further includes etching exposed lateral surfaces of the dielectric layer to form an etched-back dielectric layer that defines substantially V-shaped recesses. In some embodiments, the method further includes forming a substantially V-shaped inner spacer within the substantially V-shaped recesses.

Abstract: A semiconductor device according to embodiments of the present disclosure includes a first die including a first bonding layer and a second die including a second hybrid bonding layer. The first bonding layer includes a first dielectric layer and a first metal coil embedded in the first dielectric layer. The second bonding layer includes a second dielectric layer and a second metal coil embedded in the second dielectric layer. The second hybrid bonding layer is bonded to the first hybrid bonding layer such that the first dielectric layer is bonded to the second dielectric layer and the first metal coil is bonded to the second metal coil.

Abstract: A method includes implanting impurities in a semiconductor substrate to form an etch stop region within the semiconductor substrate; forming a transistor structure on a front side of the semiconductor substrate; forming a front-side interconnect structure over the transistor structure; performing a thinning process on a back side of the semiconductor substrate to reduce a thickness of the semiconductor substrate, wherein the thinning process is slowed by the etch stop region; and forming a back-side interconnect structure over the back side of the semiconductor substrate.

Abstract: Embodiments of the present disclosure provide a method for forming semiconductor device structures. The method includes forming a fin structure having a stack of semiconductor layers comprising first semiconductor layers and second semiconductor layers alternatingly arranged, forming a sacrificial gate structure over a portion of the fin structure, removing the first and second semiconductor layers in a source/drain region of the fin structure that is not covered by the sacrificial gate structure, forming an epitaxial source/drain feature in the source/drain region, removing portions of the sacrificial gate structure to expose the first and second semiconductor layers, removing portions of the second semiconductor layers so that at least one second semiconductor layer has a width less than a width of each of the first semiconductor layers, forming a conformal gate dielectric layer on exposed first and second semiconductor layers, and forming a gate electrode layer on the conformal gate dielectric layer.

Abstract: A sensing apparatus is applicable to a surgical instrument having a clamping portion, a linkage rod member and an operating portion. The damping portion is used to damp a target. The sensing apparatus includes a touch sensor set, a force sensor, a displacement sensor and a processing device. The touch sensor set can sense a touch signal between the target and the clamping portion. The force sensor can sense a clamping force applied on the target. The displacement sensor can measure a displacement of the linkage rod member. The processing device includes a database, a processing unit and a comparison unit. The database stores reference curves of different reference objects. The processing unit can build an actual measurement curve of the target. The comparison unit can compare the actual measurement curve with each of the reference curves to obtain one of the reference curves corresponding to the actual measurement curve.

Abstract: A surgery navigation system according to the present invention includes: a positioning module including: a transceiver unit, configured to transmit a frequency modulated signal; multiple positioning marks, which are separately disposed on each vertebra of a spine and configured to transmit the positioning mark frequency signal to the transceiver unit after receiving the frequency modulated signal; and a surgical instrument, which transmits the instrument frequency signal to the transceiver unit after receiving the frequency modulated signal; and a processing unit, which obtains a distance between the positioning marks and the transceiver unit through calculation according to a difference between the positioning mark frequency signal and the frequency modulated signal, and obtains space coordinates of the spine through calculation according to the distance; and obtains a distance between the surgical instrument and the transceiver unit through calculation according to a difference between the instrument freque

Abstract: An acetabular cup structure of the present invention includes a ball-and-socket prosthesis and a liner, where a ball wall of the ball-and-socket prosthesis has a groove formed by connecting at least two continuous straight lines, and the groove connects an outer surface of the ball wall to an inner surface of the ball wall, so that an expandable sheet is formed between the groove formed by connecting the at least two continuous straight lines and having an angle there-between and two ends of the groove that are not connected, and the liner, for connecting a femoral stem, is tightly attached to the inner surface of the ball wall, and when the liner is tightly attached to the inner surface of the ball wall, the liner presses the sheet and extends to the groove, so that the liner is attached to the ball-and-socket prosthesis more tightly.

Abstract: A sensing apparatus is applicable to a surgical instrument having a clamping portion, a linkage rod member and an operating portion. The damping portion is used to damp a target. The sensing apparatus includes a touch sensor set, a force sensor, a displacement sensor and a processing device. The touch sensor set can sense a touch signal between the target and the clamping portion. The force sensor can sense a clamping force applied on the target. The displacement sensor can measure a displacement of the linkage rod member. The processing device includes a database, a processing unit and a comparison unit. The database stores reference curves of different reference objects. The processing unit can build an actual measurement curve of the target. The comparison unit can compare the actual measurement curve with each of the reference curves to obtain one of the reference curves corresponding to the actual measurement curve.

Abstract: An intervertebral implant is a porous structure formed of a plurality of metal balls, and the intervertebral implant includes a bone support area and a bone growth area. The bone support area and the bone growth area each have a plurality of connecting holes, and a porosity of the bone support area is smaller than that of the bone growth area.

Abstract: An intervertebral implant, particularly an intervertebral implant comprising local degradable hydroxyl apatite/metal block and based on a support mounting model of porous hydroxyl apatite with metal powders held for sintering and molding, guides osseous tissues to grow in porous metal and is steadily merged in upper and lower bones when the implanted hydroxyl apatite is gradually degraded in a certain period.

Abstract: A supporting instrument with a modular intramedullary nail includes a plurality of intramedullary nails and a coupling module. Each intramedullary nail is in a form of a long rod and has a coupling portion arranged between two ends of the intramedullary nail and an abutting surface along a longitudinal face of the intramedullary nail. The coupling module is mounted to the coupling portions of the plurality of intramedullary nails for the abutting surfaces of the plurality of intramedullary nails to abut against each other and for assembling the plurality of intramedullary nails.

Abstract: A supporting instrument with a modular intramedullary nail includes a plurality of intramedullary nails and a coupling module. Each intramedullary nail is in a form of a long rod and has a coupling portion arranged between two ends of the intramedullary nail and an abutting surface along a longitudinal face of the intramedullary nail. The coupling module is mounted to the coupling portions of the plurality of intramedullary nails for the abutting surfaces of the plurality of intramedullary nails to abut against each other and for assembling the plurality of intramedullary nails.

Abstract: A semiconductor device includes a gate structure over a substrate, a source region in the substrate, where the source region is adjacent to the gate structure. Additionally, the semiconductor device includes a drain region in the substrate, where the drain region is adjacent to the gate structure. Moreover, the semiconductor device includes a first dislocation in the substrate between the source region and the drain region. Furthermore, the semiconductor device includes a second dislocation in the substrate between the source region and the drain region, where the second dislocation is substantially parallel to the first dislocation.

Abstract: A metal implant produced from a method for treating a surface of a metal implant includes a metal layer, an oxide layer formed on a surface of the metal layer, and a macromolecular anti-adhesion layer formed on an outer surface of the oxide layer. The macromolecular anti-adhesion layer is formed of polyethylene glycol.

Abstract: An intervertebral implant, particularly an intervertebral implant comprising local degradable hydroxyl apatite/metal block and based on a support mounting model of porous hydroxyl apatite with metal powders held for sintering and molding, guides osseous tissues to grow in porous metal and is steadily merged in upper and lower bones when the implanted hydroxyl apatite is gradually degraded in a certain period.