Abstract: A semiconductor die package includes an inductor-capacitor (LC) semiconductor die that is directly bonded with a logic semiconductor die. The LC semiconductor die includes inductors and capacitors that are integrated into a single die. The inductors and capacitors of the LC semiconductor die may be electrically connected with transistors and other logic components on the logic semiconductor die to form a voltage regulator circuit of the semiconductor die package. The integration of passive components (e.g., the inductors and capacitors) of the voltage regulator circuit into a single semiconductor die reduces signal propagation distances in the voltage regulator circuit, which may increase the operating efficiency of the voltage regulator circuit, may reduce the formfactor for the semiconductor die package, may reduce parasitic capacitance and/or may reduce parasitic inductance in the voltage regulator circuit (thereby improving the performance of the voltage regulator circuit), among other examples.

Abstract: This disclosure relates to an X-ray reflectometry apparatus and a method for measuring a three-dimensional nanostructure on a flat substrate. The X-ray reflectometry apparatus comprises an X-ray source, an X-ray reflector, a 2-dimensional X-ray detector, and a two-axis moving device. The X-ray source is for emitting X-ray. The X-ray reflector is configured for reflecting the X-ray onto a sample surface. The 2-dimensional X-ray detector is configured to collect a reflecting X-ray signal from the sample surface. The two-axis moving device is configured to control two-axis directions of the 2-dimensional X-ray detector to move on at least one of x-axis and z-axis with a formula concerning an incident angle of the X-ray with respect to the sample surface for collecting the reflecting X-ray signal.

Abstract: Semiconductor device structures having gate structures with tunable threshold voltages are provided. Various geometries of device structure can be varied to tune the threshold voltages. In some examples, distances from tops of fins to tops of gate structures can be varied to tune threshold voltages. In some examples, distances from outermost sidewalls of gate structures to respective nearest sidewalls of nearest fins to the respective outermost sidewalls (which respective gate structure overlies the nearest fin) can be varied to tune threshold voltages.

Abstract: A semiconductor device according to embodiments of the present disclosure includes a first die including a first bonding layer and a second die including a second hybrid bonding layer. The first bonding layer includes a first dielectric layer and a first metal coil embedded in the first dielectric layer. The second bonding layer includes a second dielectric layer and a second metal coil embedded in the second dielectric layer. The second hybrid bonding layer is bonded to the first hybrid bonding layer such that the first dielectric layer is bonded to the second dielectric layer and the first metal coil is bonded to the second metal coil.

Abstract: A method of making a semiconductor device includes comparing a thickness profile of a surface of a wafer with a reference value using a control unit. The method further includes transmitting a control signal to an adjustable nozzle based on the comparison of the thickness profile and the reference value. The method further includes rotating the adjustable nozzle about a longitudinal axis of the adjustable nozzle in response to the control signal.

Abstract: A high density plasma chemical vapor deposition (HDP CVD) chamber includes a nozzle including a base having a hollow center portion for conducting gas; a tip coupled to the base and having an opening formed therein for conducting gas from the base to the exterior of the nozzle. The HDP CVD chamber further includes a baffle positioned in a top portion of the HDP CVD chamber, wherein the baffle is equipped with an adjustable baffle nozzle.

Abstract: A high density plasma chemical vapor deposition (HDP CVD) chamber includes a nozzle including a base having a hollow center portion for conducting gas; a tip coupled to the base and having an opening formed therein for conducting gas from the base to the exterior of the nozzle. The HDP CVD chamber further includes a baffle positioned in a top portion of the HDP CVD chamber, wherein the baffle is equipped with an adjustable baffle nozzle.

Abstract: A method of controlling a position of an adjustable nozzle includes depositing a film on a surface of a wafer. The method includes measuring a thickness profile of the surface of the wafer. The method includes comparing the measurement of the thickness profile with a reference value using a control unit. The method includes transmitting a control signal to the adjustable nozzle to alter the position of the adjustable nozzle based on the result of the comparison. The adjustable nozzle includes a base having a hollow center portion for conducting gas, the base configured for connection to a gas source. The adjust nozzle includes a tip coupled to the base and having an opening for conducting gas from the base to the exterior of the nozzle, wherein the base is configured for pivoting about a longitudinal axis of the base in response to the control signal.

Abstract: A backlight module includes a plurality of surface light source assembly. Each surface light source assembly includes a light source with a plurality of light emitting surfaces having a light emission angle range each; a light guide plate with a bottom surface having a groove for receiving the light source, a light exit surface opposite to the bottom surface, and at least one side surface between the bottom surface and the light exit surface; and a plurality of groove structures configured to reflect a portion of a light emitted from the light emitting surfaces to outside their light emission angle range.

Abstract: A surface light source assembly includes at least one light emitting element and a light guide plate. Each light emitting element has an annular light emitting side surface. The light guide plate has a bottom surface and a light emission surface opposite to each other. The bottom surface has at least one accommodation groove to accommodate the at least one light emitting element. The accommodation groove has a light incident surface. The light incident surface surrounds the annular light emitting side surface of the light emitting element located in the accommodation groove. The light emission surface of the light guide plate is a convex surface. A backlight module having a plurality of above light source assemblies is also provided. The surface light source assembly and the backlight module of the invention can enhance the luminance uniformity and suppress the light leakage at the edge of the light guide plate.

Abstract: A surface light source assembly includes a light source and a light guide plate. The light source has a plurality of light emitting surfaces. Each of the light emitting surfaces has a light emission angle range. The light guide plate has a bottom surface, a light exit surface opposite to the bottom surface, and at least one side surface connected between the bottom surface and the light exit surface. The bottom surface has an accommodation groove for accommodating the light source. The light emitting surfaces face the at least one side surface. The light guide plate further has a plurality of groove structures located within the light emission angle range of the light emitting surfaces to reflect a portion of a light emitted from the light emitting surfaces to outside the light emission angle range. A backlight module including a plurality of aforementioned surface light source assemblies is also provided.

Abstract: A method of controlling a position of an adjustable nozzle includes depositing a film on a surface of a wafer. The method includes measuring a thickness profile of the surface of the wafer. The method includes comparing the measurement of the thickness profile with a reference value using a control unit. The method includes transmitting a control signal to the adjustable nozzle to alter the position of the adjustable nozzle based on the result of the comparison. The adjustable nozzle includes a base having a hollow center portion for conducting gas, the base configured for connection to a gas source. The adjust nozzle includes a tip coupled to the base and having an opening for conducting gas from the base to the exterior of the nozzle, wherein the base is configured for pivoting about a longitudinal axis of the base in response to the control signal.

Abstract: A method for manufacturing a semiconductor device is provided, including forming a fin field effect transistor (FinFET) structure on a semiconductor substrate. The FinFET structure includes at least one fin, and a gate electrode structure and source/drain regions on the at least one fin. A dielectric film is formed over the at least on fin. The dielectric film is irradiated with ultra violet (UV) radiation from a single UV source.

Abstract: The description relates to an adjustable nozzle capable of pivoting about an axis of the nozzle and translating along the axis of the nozzle. A high density plasma chemical vapor deposition (HDP CVD) chamber houses a plurality of adjustable nozzles. A feedback control system includes a control unit coupled to the adjustable nozzle and the HDP CVD chamber to form a more uniform thickness profile of films deposited on a wafer in the HDP CVD chamber.

Abstract: A method for manufacturing a semiconductor device is provided, including forming a fin field effect transistor (FinFET) structure on a semiconductor substrate. The FinFET structure includes at least one fin, and a gate electrode structure and source/drain regions on the at least one fin. A dielectric film is formed over the at least on fin. The dielectric film is irradiated with ultra violet (UV) radiation from a single UV source.

Abstract: A light source module including a light guide plate, at least one light emitting device, a light-controlling pattern element, and an absorbing pattern element is provided. The light guide plate has a light emitting surface, a first surface opposite the light emitting surface, and at least one opening. The opening passes through the first surface and extends from the first surface toward the light emitting surface. The at least one light emitting device is disposed in the opening and arranged along an arranging direction. The light-controlling pattern element is disposed on the light emitting surface and covers the opening and the light emitting device. The opening faces towards the absorbing pattern element. The absorbing pattern element is disposed besides one of the at least one light emitting device and extends toward a side wall of the opening. Moreover, another two light source modules are also provided.

Abstract: A light source module including a light guide plate, a plurality of light emitting devices, and a plurality of first reflective devices is provided. The light guide plate has a plurality of through holes and a light emitting surface. The through holes pass through the light emitting surface. Each of the through holes has a first side wall and a second side wall opposite the first side wall. At least one of the light emitting devices is disposed in each of the through holes. Each of the light emitting devices is capable emitting a light beam. The light beam enters the light guide plate from the first side wall of the through hole which the light emitting device is disposed in and leaves the light guide plate from the light emitting surface. The first reflective devices are disposed on the second side walls of the through holes.

Abstract: A light source module including a light guide plate, a plurality of light emitting devices, and a plurality of first reflective devices is provided. The light guide plate has a plurality of through holes and a light emitting surface. The through holes pass through the light emitting surface. Each of the through holes has a first side wall and a second side wall opposite the first side wall. At least one of the light emitting devices is disposed in each of the through holes. Each of the light emitting devices is capable emitting a light beam. The light beam enters the light guide plate from the first side wall of the through hole which the light emitting device is disposed in and leaves the light guide plate from the light emitting surface. The first reflective devices are disposed on the second side walls of the through holes.

Abstract: A light source module including a light guide plate, at least one light emitting device, a light-controlling pattern element, and an absorbing pattern element is provided. The light guide plate has a light emitting surface, a first surface opposite the light emitting surface, and at least one opening. The opening passes through the first surface and extends from the first surface toward the light emitting surface. The at least one light emitting device is disposed in the opening and arranged along an arranging direction. The light-controlling pattern element is disposed on the light emitting surface and covers the opening and the light emitting device. The opening faces towards the absorbing pattern element. The absorbing pattern element is disposed besides one of the at least one light emitting device and extends toward a side wall of the opening. Moreover, another two light source modules are also provided.

Abstract: The description relates to an adjustable nozzle capable of pivoting about an axis of the nozzle and translating along the axis of the nozzle. A high density plasma chemical vapor deposition (HDP CVD) chamber houses a plurality of adjustable nozzles. A feedback control system includes a control unit coupled to the adjustable nozzle and the HDP CVD chamber to form a more uniform thickness profile of films deposited on a wafer in the HDP CVD chamber.