Abstract: A fan module including a body and a plurality of blades is provided. The body has a rotating axis and the body is telescopic along the rotating axis to have an elongated state and a shortened state. The blades are respectively disposed on the body and rotate along with the body along the rotating axis. At least a portion of each blade is flexible and a bending state of each blade is changed along with the elongated state or the shortened state of the body. An axial size of each blade along the rotating axis when the body is in the elongated state is greater than the axial size of each blade along the rotating axis when the body is in the shortened state.

Abstract: The present disclosure describes a method to form a bonded semiconductor structure. The method includes forming a first bonding layer on a first wafer, forming a debonding structure on a second wafer, forming a second bonding layer on the debonding structure, bonding the first and second wafers with the first and second bonding layers, and debonding the second wafer from the first wafer via the debonding structure. The debonding structure includes a first barrier layer, a second barrier layer, and a water-containing dielectric layer between the first and second barrier layers.

Abstract: A MEMS device and a method for manufacturing a MEMS device are provided. The MEMS device includes an anchor, a diaphragm structure, and a sealing film. The diaphragm structure is disposed over the anchor and has an opening through the diaphragm structure. The sealing film covers at least a portion of the opening of the diaphragm structure.

Abstract: A luminescent material includes a particle of an irregular shape. The particle of an irregular shape includes a core of an irregular shape and quantum dots. The quantum dots distribute on the core.

Abstract: A method for forming a semiconductor device includes receiving a first bonded to a second substrate by a dielectric layer, wherein a conductive layer is disposed in the dielectric layer and a cavity is formed between the first substrate, the second substrate and the dielectric layer; forming a via opening in the second substrate to expose the conductive layer and a vent hole in the substrate to couple to the cavity; forming a first buffer layer covering sidewalls of the via opening and a second buffer layer covering sidewalls of the vent hole; and forming a connecting structure in the via opening and a sealing structure to seal the vent hole.

Abstract: A device includes a substrate, a first conductive layer on the substrate, a first conductive via, and further conductive layers and conductive vias between the first conductive via and the substrate. The first conductive via is between the substrate and the first conductive layer, and is electrically connected to the first conductive layer. The first conductive via extends through at least two dielectric layers, and has thickness greater than about 8 kilo-Angstroms. An inductor having high quality factor is formed in the first conductive layer and also includes the first conductive via.

Abstract: A transparent antenna includes a substrate, an antenna grid layer, and a ground grid layer. The substrate has an electrically conductive hole extending from two opposite surfaced of the substrate. The antenna grid layer is formed on a surface of the substrate. The antenna grid layer includes a feeding portion and a transmission portion. The ground grid layer is formed on another surface of the substrate. The ground grid layer is coupled to the feeding portion of the antenna grid layer via the electrically conductive hole. An offset distance between a projection of a gridline of the antenna grid layer on the first surface and a projection of a gridline of the ground grid layer on the first surface is smaller than or equal to half of a difference between a line width of the antenna grid layer and a line width of the ground grid layer.

Abstract: A microelectromechanical system device includes a substrate, a dielectric layer, an electrode, a surface modification layer and a membrane. The dielectric layer is formed on the substrate, and is formed with a cavity that is defined by a cavity-defining wall. The electrode is formed in the dielectric layer. The surface modification layer covers the cavity-defining wall, and has a plurality of hydrophobic end groups. The membrane is connected to the dielectric layer, and seals the cavity. The membrane is movable toward or away from the electrode. A method for making a microelectromechanical system device is also provided.

Abstract: A fan module including a first body, a second body, a first fan assembly, a power module, and a second fan assembly is provided. The second body is slidably disposed at the first body to form a circulation space together. The first fan assembly is rotatably disposed at the first body and has sliding grooves. The power module is disposed in the first body and connected to the first fan assembly. The second fan assembly is rotatably disposed at the second body and has sliding portions, respectively and slidably disposed in corresponding sliding grooves. The power module is adapted to drive the first and second fan assemblies to rotate relative to the first body. A link module is adapted to drive the first and second bodies to relatively slide along an axial direction, so that the first and second fan assemblies are relatively separated or overlapped along the axial direction.

Abstract: A vapor chamber device and a manufacturing method are disclosed. The vapor chamber has a housing and multiple independent chambers. The housing includes two shells opposite to each other. The independent chambers are formed between the two shells. Each independent chamber contains a working fluid and has at least one diversion bump and a capillary structure. The diversion bump is formed on an inner surface of the second shell, and the capillary structure is mounted on the diversion bump. When the vapor chamber device is vertically mounted to a heat source, the independent chambers at an upper portion of the vapor chamber device still contain the working fluid. The working fluid in the independent chambers may not all flow to a bottom of the vapor chamber device. Therefore, a contact area between the working fluid and the heat source is increased and heat dissipation efficiency is improved.

Abstract: A semiconductor device includes a first substrate; a dielectric layer disposed over the first substrate and a conductive layer disposed in the dielectric layer; a second substrate bonded to the dielectric layer, wherein the second substrate has a first surface facing the first substrate and a second surface opposite to the first substrate; a connecting structure penetrating the second substrate and a portion of the dielectric layer and electrically coupled to the conductive layer; a vent hole penetrating the second substrate from the second surface to the first surface; a first buffer layer between the connecting structure and the dielectric layer and between the connecting structure and the second substrate; and a second buffer layer covering sidewalls of the vent hole and exposed through the first surface of the second substrate. The first buffer layer and the second buffer layer include a same material and a same thickness.

Abstract: A MEMS device and a method for manufacturing a MEMS device are provided. The MEMS device includes an anchor, a diaphragm structure, and a sealing film. The diaphragm structure is disposed over the anchor and has an opening through the diaphragm structure. The sealing film covers at least a portion of the opening of the diaphragm structure.

Abstract: The present disclosure provides a method for fabricating a semiconductor structure, including bonding a capping substrate over a sensing substrate, forming a through hole traversing the capping substrate, forming a dielectric layer over the capping substrate under a first vacuum level, and forming a metal layer over the dielectric layer under a second vacuum level, wherein the second vacuum level is higher than the first vacuum level.

Abstract: The present disclosure provides a semiconductor structure, including a sensing substrate, a capping substrate over the sensing substrate, the capping substrate having a first surface facing toward the sensing substrate and a second surface facing away from the sensing substrate, wherein the capping substrate comprises a through hole extending from the first surface to the second surface, a spacer between the sensing substrate and the capping substrate, the spacer, the sensing substrate, and the capping substrate forming a cavity connecting with the through hole, and a sealing structure at the second surface and aligning with the through hole, wherein the sealing structure comprises a metal layer and a dielectric layer.

Abstract: The present disclosure provides a semiconductor structure, including a sensing substrate, a capping substrate over the sensing substrate, the capping substrate having a first surface facing toward the sensing substrate and a second surface facing away from the sensing substrate, wherein the capping substrate comprises a through hole extending from the first surface to the second surface, a spacer between the sensing substrate and the capping substrate, the spacer, the sensing substrate, and the capping substrate forming a cavity connecting with the through hole, and a sealing structure at the second surface and aligning with the through hole, wherein the sealing structure comprises a metal layer and a dielectric layer.

Abstract: A semiconductor device includes a first substrate; a dielectric layer disposed over the first substrate and a conductive layer disposed in the dielectric layer; a second substrate bonded to the dielectric layer, wherein the second substrate has a first surface facing the first substrate and a second surface opposite to the first substrate; a connecting structure penetrating the second substrate and a portion of the dielectric layer and electrically coupled to the conductive layer; a vent hole penetrating the second substrate from the second surface to the first surface; a first buffer layer between the connecting structure and the dielectric layer and between the connecting structure and the second substrate; and a second buffer layer covering sidewalls of the vent hole and exposed through the first surface of the second substrate. The first buffer layer and the second buffer layer include a same material and a same thickness.

Abstract: The disclosure relates to a machine tool. The machine tool includes machine base, guide rails, and movable main structure. The movable main structure is slidably disposed on the machine base via the guide rails, and each guide rail has bearing surfaces. The machine tool has X-axis, Y-axis, and Z-axis, the Z-axis is substantially parallel to an axis of a chuck of the machine tool, and the Y-axis is substantially parallel to a sliding direction of the movable main structure. The machine tool characterized in that: normal directions of the bearing surfaces of the guide rails are not parallel to the X-axis, the Y-axis, the Z-axis of the machine tool and a reference line that passes through the guide rails.

Abstract: A method of resource allocation in a server system includes predicting a resource requirement of an application by adopting a neural network algorithm. When the resource requirement of the application is greater than a virtual machine allocation threshold, turn on a virtual machine for the application and adjust the value of the virtual machine allocation threshold to be the sum of the virtual machine allocation threshold and a resource capacity of the virtual machine.

Abstract: A rotation mechanism includes a mandrel, a rotation axle, a needle roller bearing and an angular bearing. The mandrel includes a shaft portion, a first annular contact portion and a second annular contact portion. The shaft portion has an outer surface, and the first annular contact portion and the second annular contact portion are located on the outer surface and respectively surround the axis of the mandrel. The rotation axle includes an annular portion, a third annular contact portion and a fourth annular contact portion. The annular portion has a shaft hole and an inner surface forming the shaft hole. The third annular contact portion and the fourth annular contact portion are located on the inner surface, and the mandrel passes through the shaft hole. The needle roller bearing is in contact with the first annular contact portion and the third annular contact portion, and is located between them.

Abstract: A rotation mechanism includes a mandrel, a rotation axle, a needle roller bearing and an angular bearing. The mandrel includes a shaft portion, a first annular contact portion and a second annular contact portion. The shaft portion has an outer surface, and the first annular contact portion and the second annular contact portion are located on the outer surface and respectively surround the axis of the mandrel. The rotation axle includes an annular portion, a third annular contact portion and a fourth annular contact portion. The annular portion has a shaft hole and an inner surface forming the shaft hole. The third annular contact portion and the fourth annular contact portion are located on the inner surface, and the mandrel passes through the shaft hole. The needle roller bearing is in contact with the first annular contact portion and the third annular contact portion, and is located between them.