Abstract: A super thin heating disk includes an upper cover made of metal, the upper cover being formed with a receiving groove; a lower cover made of metal and installed within the receiving groove; the heating coil being distributed in the receiving groove; a heating coil installed within the receiving groove, two ends of the heating coil being installed with two electrodes, respectively, which are connected to external positive and negative electrodes for current conduction; a thermal couple installed in the receiving groove for detecting temperatures of the heating coil; the thermal couple being connected to two connection wires for conducting external transmission lines so that detection temperature data can be transferred out; and two insulation layers installed in the receiving groove and at an upper and a lower side of the heating coil.

Abstract: A PVD reactor with a function of alignment in covering an upper cover includes a cavity having a first contact surface; an interior of the cavity having a metal isolation plate; an upper cover pivotally installed to the cavity; the upper cover having a second contact surface which is positioned corresponding to the first contact surface of the cavity; the upper cover being capable of being combined with a target; a plurality of semi-spherical recesses in the first contact surface of the cavity; and a plurality of semi-spherical protrusions in the second contact surface; when the upper cover covers upon the cavity, the plurality of semi-spherical protrusions will embed into the plurality of semi-spherical recesses.

Abstract: A vapor reduction device for a semiconductor wafer has a plurality of heat plates which are spaced arranged longitudinally for receiving a plurality of wafers, the heat plates are integrated into a heating frame which is further placed into a casing. The movements of the heat plates within the casing causes that the wafers can be heated rapidly and uniformly so as to evaporated vapor effectively. The heat plates are separable from the heating frame and thus a number of the heat plates is selectable as desired. The heating temperature for the heat plates is controllable independently so that the temperatures of the wafers are controllable so that the temperature differences of the wafers are controllable to be uniformly distributed.

Abstract: A plasma etching reaction chamber includes a casing having a receiving chamber; a base liftably installed below the receiving chamber; a first electrode and a second electrode; and a radio frequency electrode rod. The second electrode has a plurality of water channels and a bottom of the second electrode is installed with two cooling water tubes which are communicated with the plurality of water channels; upper sides of the two cooling water tubes are hidden within the driving rod and lower sides thereof extend downwards to be out of the casing so that external cooling water can flow into the cooling water tubes and then to the water channels to achieve the object of cooling.