Patents by Inventor Wei Chuang Wu
Wei Chuang Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180197911Abstract: Among other things, one or more image sensors and techniques for forming image sensors are provided. An image sensor comprises a photodiode array configured to detect light. The image sensor comprises an oxide grid comprising a first oxide grid portion and a second oxide grid portion. A metal grid is formed between the first oxide grid portion and the second oxide grid portion. The oxide grid and the metal grid define a filler grid. The filler grid comprises a filler grid portion, such as a color filter, that allows light to propagate through the filler grid portion to an underlying photodiode. The oxide grid and the metal grid confine or channel the light within the filler grid portion. The oxide grid and the metal grid are formed such that the filler grid provides a relatively shorter propagation path for the light, which improves light detection performance of the image sensor.Type: ApplicationFiled: March 8, 2018Publication date: July 12, 2018Inventors: Shyh-Fann TING, Ching-Chun WANG, Chen-Jong WANG, Jhy-Jyi SZE, Chun-Ming SU, Wei Chuang WU, Yu-Jen WANG
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Publication number: 20180158850Abstract: The image sensing device includes a semiconductor substrate, an interconnection layer, a radiation-sensing region and an isolation structure. The semiconductor substrate has a front surface and a back surface. The interconnection layer is disposed over the front surface of the semiconductor substrate. The radiation-sensing region is disposed in the semiconductor substrate. The isolation structure is disposed on the back surface of the semiconductor substrate. The isolation structure includes a trench and an etch stop layer. The trench extends from the back surface of the semiconductor substrate. The etch stop layer is disposed along the trench. An etch selectivity of a silicon oxide film to the etch stop layer is greater than a predetermined value.Type: ApplicationFiled: May 10, 2017Publication date: June 7, 2018Inventors: Wei-Chuang WU, Ming-Tsong WANG, Feng-Chi HUNG, Ching-Chun WANG, Jen-Cheng LIU, Dun-Nian YAUNG
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Patent number: 9917130Abstract: Among other things, one or more image sensors and techniques for forming image sensors are provided. An image sensor comprises a photodiode array configured to detect light. The image sensor comprises an oxide grid comprising a first oxide grid portion and a second oxide grid portion. A metal grid is formed between the first oxide grid portion and the second oxide grid portion. The oxide grid and the metal grid define a filler grid. The filler grid comprises a filler grid portion, such as a color filter, that allows light to propagate through the filler grid portion to an underlying photodiode. The oxide grid and the metal grid confine or channel the light within the filler grid portion. The oxide grid and the metal grid are formed such that the filler grid provides a relatively shorter propagation path for the light, which improves light detection performance of the image sensor.Type: GrantFiled: August 23, 2016Date of Patent: March 13, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Shyh-Fann Ting, Ching-Chun Wang, Chen-Jong Wang, Jhy-Jyi Sze, Chun-Ming Su, Wei Chuang Wu, Yu-Jen Wang
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Publication number: 20180026066Abstract: In some embodiments, the present disclosure relates to a method of forming a back-side image (BSI) sensor. The method may be performed by forming an image sensing element within a substrate and forming a pixel-level memory node at a position within the substrate that is laterally offset from the image sensing element. A back-side of the substrate is etched to form one or more trenches that are laterally separated from the image sensing element by the substrate and that vertically overlie the pixel-level memory node. A reflective material is formed within the one or more trenches.Type: ApplicationFiled: September 20, 2017Publication date: January 25, 2018Inventors: Chun-Yuan Chen, Ching-Chun Wang, Dun-Nian Yaung, Shyh-Fann Ting, Wei Chuang Wu, Yen-Ting Chiang, Kuan-Tsun Chen
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Patent number: 9812483Abstract: In some embodiments, the present disclosure relates to a back-side image (BSI) sensor having a global shutter pixel with a reflective material that prevents contamination of a pixel-level memory node. In some embodiments, the BSI image sensor has an image sensing element arranged within a semiconductor substrate and a pixel-level memory node arranged within the semiconductor substrate at a location laterally offset from the image sensing element. A reflective material is also arranged within the semiconductor substrate at a location between the pixel-level memory node and a back-side of the semiconductor substrate. The reflective material has an aperture that overlies the image sensing element. The reflective material allows incident radiation to reach the image sensing element while preventing the incident radiation from reaching the pixel-level memory node, thereby preventing contamination of the pixel-level memory node.Type: GrantFiled: May 9, 2016Date of Patent: November 7, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Yuan Chen, Ching-Chun Wang, Dun-Nian Yaung, Shyh-Fann Ting, Wei Chuang Wu, Yen-Ting Chiang, Kuan-Tsun Chen
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Publication number: 20170309673Abstract: Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters.Type: ApplicationFiled: July 3, 2017Publication date: October 26, 2017Inventors: Wei Chuang Wu, Jhy-Jyi Sze, Yu-Jen Wang, Yen-Chang Chu, Shyh-Fann Ting, Ching-Chun Wang
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Patent number: 9698190Abstract: Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters.Type: GrantFiled: May 17, 2016Date of Patent: July 4, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei Chuang Wu, Jhy-Jyi Sze, Yu-Jen Wang, Yen-Chang Chu, Shyh-Fann Ting, Ching-Chun Wang
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Publication number: 20170117315Abstract: In some embodiments, the present disclosure relates to a back-side image (BSI) sensor having a global shutter pixel with a reflective material that prevents contamination of a pixel-level memory node. In some embodiments, the BSI image sensor has an image sensing element arranged within a semiconductor substrate and a pixel-level memory node arranged within the semiconductor substrate at a location laterally offset from the image sensing element. A reflective material is also arranged within the semiconductor substrate at a location between the pixel-level memory node and a back-side of the semiconductor substrate. The reflective material has an aperture that overlies the image sensing element. The reflective material allows incident radiation to reach the image sensing element while preventing the incident radiation from reaching the pixel-level memory node, thereby preventing contamination of the pixel-level memory node.Type: ApplicationFiled: May 9, 2016Publication date: April 27, 2017Inventors: Chun-Yuan Chen, Ching-Chun Wang, Dun-Nian Yaung, Shyh-Fann Ting, Wei Chuang Wu, Yen-Ting Chiang, Kuan-Tsun Chen
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Patent number: 9536810Abstract: A pad structure for a complementary metal-oxide-semiconductor (CMOS) image sensor is provided. A semiconductor substrate is arranged over a back end of line (BEOL) metallization stack, and comprises a scribe line opening. A buffer layer lines the scribe line opening. A conductive pad comprises a base region and a protruding region. The base region is arranged over the buffer layer in the scribe line opening, and the protruding region protrudes from the base region into the BEOL metallization stack. A dielectric layer fills the scribe line opening over the conductive pad, and is substantially flush with an upper surface of the semiconductor substrate. Further, a method for manufacturing the pad structure, as well as the CMOS image sensor, are provided.Type: GrantFiled: June 12, 2015Date of Patent: January 3, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yen-Ting Chiang, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Hsiao-Hui Tseng, Ming-Tsong Wang, Shyh-Fann Ting, Wei Chuang Wu
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Publication number: 20160365378Abstract: A pad structure for a complementary metal-oxide-semiconductor (CMOS) image sensor is provided. A semiconductor substrate is arranged over a back end of line (BEOL) metallization stack, and comprises a scribe line opening. A buffer layer lines the scribe line opening. A conductive pad comprises a base region and a protruding region. The base region is arranged over the buffer layer in the scribe line opening, and the protruding region protrudes from the base region into the BEOL metallization stack. A dielectric layer fills the scribe line opening over the conductive pad, and is substantially flush with an upper surface of the semiconductor substrate. Further, a method for manufacturing the pad structure, as well as the CMOS image sensor, are provided.Type: ApplicationFiled: June 12, 2015Publication date: December 15, 2016Inventors: Yen-Ting Chiang, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Hsiao-Hui Tseng, Ming-Tsong Wang, Shyh-Fann Ting, Wei Chuang Wu
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Publication number: 20160358970Abstract: Among other things, one or more image sensors and techniques for forming image sensors are provided. An image sensor comprises a photodiode array configured to detect light. The image sensor comprises an oxide grid comprising a first oxide grid portion and a second oxide grid portion. A metal grid is formed between the first oxide grid portion and the second oxide grid portion. The oxide grid and the metal grid define a filler grid. The filler grid comprises a filler grid portion, such as a color filter, that allows light to propagate through the filler grid portion to an underlying photodiode. The oxide grid and the metal grid confine or channel the light within the filler grid portion. The oxide grid and the metal grid are formed such that the filler grid provides a relatively shorter propagation path for the light, which improves light detection performance of the image sensor.Type: ApplicationFiled: August 23, 2016Publication date: December 8, 2016Inventors: Shyh-Fann Ting, Ching-Chun Wang, Chen-Jong Wang, Jhy-Jyi Sze, Chun-Ming Su, Wei Chuang Wu, Yu-Jen Wang
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Publication number: 20160260767Abstract: Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters.Type: ApplicationFiled: May 17, 2016Publication date: September 8, 2016Inventors: Wei Chuang Wu, Jhy-Jyi Sze, Yu-Jen Wang, Yen-Chang Chu, Shyh-Fann Ting, Ching-Chun Wang
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Patent number: 9425228Abstract: Among other things, one or more image sensors and techniques for forming image sensors are provided. An image sensor comprises a photodiode array configured to detect light. The image sensor comprises an oxide grid comprising a first oxide grid portion and a second oxide grid portion. A metal grid is formed between the first oxide grid portion and the second oxide grid portion. The oxide grid and the metal grid define a filler grid. The filler grid comprises a filler grid portion, such as a color filter, that allows light to propagate through the filler gird portion to an underlying photodiode. The oxide grid and the metal grid confine or channel the light within the filler gird portion. The oxide grid and the metal grid are formed such that the filler grid provides a relatively shorter propagation path for the light, which improves light detection performance of the image sensor.Type: GrantFiled: December 9, 2013Date of Patent: August 23, 2016Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Shyh-Fann Ting, Ching-Chun Wang, Wei Chuang Wu, Yu-Jen Wang, Chun-Ming Su, Jhy-Jyi Sze, Chen-Jong Wang
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Patent number: 9349769Abstract: Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters.Type: GrantFiled: October 31, 2013Date of Patent: May 24, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei Chuang Wu, Jhy-Jyi Sze, Yu-Jen Wang, Yen-Chang Chu, Shyh-Fann Ting, Ching-Chun Wang
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Publication number: 20150155322Abstract: Among other things, one or more image sensors and techniques for forming image sensors are provided. An image sensor comprises a photodiode array configured to detect light. The image sensor comprises an oxide grid comprising a first oxide grid portion and a second oxide grid portion. A metal grid is formed between the first oxide grid portion and the second oxide grid portion. The oxide grid and the metal grid define a filler grid. The filler grid comprises a filler grid portion, such as a color filter, that allows light to propagate through the filler gird portion to an underlying photodiode. The oxide grid and the metal grid confine or channel the light within the filler gird portion. The oxide grid and the metal grid are formed such that the filler grid provides a relatively shorter propagation path for the light, which improves light detection performance of the image sensor.Type: ApplicationFiled: December 9, 2013Publication date: June 4, 2015Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: Shyh-Fann Ting, Ching-Chun Wang, Wei Chuang Wu, Yu-Jen Wang, Chun-Ming Su, Jhy-Jyi Sze, Chen-Jong Wang
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Publication number: 20150115382Abstract: Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters.Type: ApplicationFiled: October 31, 2013Publication date: April 30, 2015Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei Chuang Wu, Jhy-Jyi Sze, Yu-Jen Wang, Yen-Chang Chu, Shyh-Fann Ting, Ching-Chun Wang
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Patent number: 8778717Abstract: A method of forming an integrated circuit structure includes providing a silicon substrate, and implanting a p-type impurity into the silicon substrate to form a p-type region. After the step of implanting, performing an anneal to form a silicon oxide region, with a portion of the p-type region converted to the silicon oxide region.Type: GrantFiled: March 17, 2010Date of Patent: July 15, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ru-Shang Hsiao, Chung-Te Lin, Nai-Wen Cheng, Yin-Kai Liao, Wei Chuang Wu
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Publication number: 20110230002Abstract: A method of forming an integrated circuit structure includes providing a silicon substrate, and implanting a p-type impurity into the silicon substrate to form a p-type region. After the step of implanting, performing an anneal to form a silicon oxide region, with a portion of the p-type region converted to the silicon oxide region.Type: ApplicationFiled: March 17, 2010Publication date: September 22, 2011Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ru-Shang Hsiao, Chung-Te Lin, Nai-Wen Cheng, Yin-Kai Liao, Wei Chuang Wu