Abstract: Semiconductor dies of a semiconductor die package are directly bonded, and a top metal region may be formed over the semiconductor dies. A plurality of conductive terminals may be formed over the top metal region. The conductive terminals are formed of copper (Cu) or another material that enables low-temperature deposition process techniques, such as electroplating, to be used to form the conductive terminal. In this way, the conductive terminals of the semiconductor die packages described herein may be formed at a relatively low temperature. This reduces the likelihood of thermal deformation of semiconductor dies in the semiconductor die packages. The reduced thermal deformation reduces the likelihood of warpage, breakage, and/or other types of damage to the semiconductor dies of the semiconductor die packages, which may increase performance and/or increase yield of semiconductor die packages.

Abstract: A method includes providing a substrate having a surface such that a first hard mask layer is formed over the surface and a second hard mask layer is formed over the first hard mask layer, forming a first pattern in the second hard mask layer, where the first pattern includes a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and where the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall, and depositing a material towards the first mandrel and the second mandrel such that a layer of the material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.

Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.

Abstract: A waste collection apparatus for collecting waste in water is provided. The waste collection apparatus includes a floating device and a waste collection device coupled to the floating device. The floating device includes a plurality of floating units. The waste collection device is coupled to the floating device. Each of the floating units includes a base and a pillar connected to the base, and the density of the base is greater than the density of the pillar.

Abstract: A waste collection apparatus for collecting waste in water is provided. The waste collection apparatus includes a floating device and a waste collection device coupled to the floating device. The waste collection device includes a fluid ejection element, and the flow out of the fluid ejection element flows toward a space where waste is collected.

Abstract: The present disclosure describes an apparatus with a local interconnect structure. The apparatus can include a first transistor, a second transistor, a first interconnect structure, a second interconnect structure, and a third interconnect structure. The local interconnect structure can be coupled to gate terminals of the first and second transistors and routed at a same interconnect level as reference metal lines coupled to ground and a power supply voltage. The first interconnect structure can be coupled to a source/drain terminal of the first transistor and routed above the local interconnect structure. The second interconnect structure can be coupled to a source/drain terminal of the second transistor and routed above the local interconnect structure. The third interconnect structure can be routed above the local interconnect structure and at a same interconnect level as the first and second interconnect structures.

Abstract: Described herein is a fusion polypeptide that contains (a) a first segment containing a Fibrobacter succinogenes 1,3-1,4-?-D-glucanase (Fs?-glucanase) or a fragment thereof; (b) a second segment containing a first Thermotoga maritima 1,3-?-D-glucanase (TmLam) or a fragment thereof; and (c) an optional third segment containing a second Thermotoga maritima 1,3-?-D-glucanase (TmLam) or a fragment thereof; wherein the fusion polypeptide has a glucanase activity. Also described are a nucleic acid molecule encoding the fusion polypeptide and a method of using the polypeptide.

Abstract: Described herein is a fusion polypeptide that contains (a) a first segment containing a Fibrobacter succinogenes 1,3-1,4-?-D-glucanase (Fs?-glucanase) or a fragment thereof; (b) a second segment containing a first Thermotoga maritima 1,3-?-D-glucanase (TmLam) or a fragment thereof; and (c) an optional third segment containing a second Thermotoga maritima 1,3-?-D-glucanase (TmLam) or a fragment thereof; wherein the fusion polypeptide has a glucanase activity. Also described are a nucleic acid molecule encoding the fusion polypeptide and a method of using the polypeptide.