Abstract: A display panel including a circuit board, a plurality of bonding pads, a plurality of light emitting devices, and a plurality of solder patterns is provided. The bonding pads are disposed on the circuit board, and each includes a first metal layer and a second metal layer. The second metal layer is located between the first metal layer and the circuit board. The first metal layer includes an opening overlapping the second metal layer. A material of the first metal layer is different from a material of the second metal layer. The light emitting devices are electrically bonded to the bonding pads. Each of the solder patterns electrically connects one of the light emitting devices and one of the bonding pads. The solder patterns each contact the second metal layer through the opening of the first metal layer of one of the bonding pads to form a eutectic bonding.

Abstract: A method includes forming a first polymer layer over a plurality of metal pads, and patterning the first polymer layer to forming a plurality of openings in the first polymer layer. The plurality of metal pads are exposed through the plurality of openings. A plurality of conductive vias are formed in the plurality of openings. A plurality of conductive pads are formed over and contacting the plurality of conductive vias. A conductive pad in the plurality of conductive pads is laterally shifted from a conductive via directly underlying, and in physical contact with, the conductive pad. A second polymer layer is formed to cover and in physical contact with the plurality of conductive pads.

Abstract: In an embodiment, a device includes: an integrated circuit die including a die connector; a dielectric layer on the integrated circuit die; an under-bump metallurgy layer having a line portion on the dielectric layer and having a via portion extending through the dielectric layer to contact the die connector; a through via on the line portion of the under-bump metallurgy layer, the through via having a first curved sidewall proximate the die connector, the through via having a second curved sidewall distal the die connector, the first curved sidewall having a longer arc length than the second curved sidewall; and an encapsulant around the through via and the under-bump metallurgy layer.