Patents by Inventor Wei-Chun Shih

Wei-Chun Shih has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210109092
    Abstract: A sensor using ultrasound to detect presence and nature of analyte includes an ultrasonic element and a receptor thereon. The ultrasonic element includes a first electrode, a second electrode facing and spaced apart from the first electrode, an insulating layer between the first electrode and the second electrode, and a vibrating film between the insulating layer and the first electrode. The vibrating film carries the first electrode. A cavity is formed between the vibrating film and the insulating layer. The receptor is on a side of the first electrode away from the second electrode. The receptor can combine with a target substance in a test analyte. When the first electrode and the second electrode are applied with different voltages, certain ultrasound frequencies are generated as the vibrating film vibrates, and the presence and weight of different target substances are indicated by the changes in resonance.
    Type: Application
    Filed: March 30, 2020
    Publication date: April 15, 2021
    Inventors: HSIN-HUA LIN, WEI-CHIH CHANG, PO-LI SHIH, CHAO-CHUN YANG, I-MIN LU
  • Publication number: 20210098717
    Abstract: A compound including a first ligand LA of Formula I, is disclosed. In Formula I, ring B is a 5- or 6-membered ring; X1, X2, and X3 are each CRA or N; R is a 5- or 6-membered carbocyclic or heterocyclic ring, which can be further fused or substituted; and (1) when ring B is an unfused 6-membered ring, X1 and X2 are N, and X3 is C; and (2) when ring B is a fused 6-membered ring, ring B has the structure of Formula II, In this structure, the wavy line indicates the point of connection to ring A; Q1 to Q6 are each C or N; and, when proviso (2) applies, (I) at least one of X1, X2, and X3 is N; or (II) R is two or more fused or unfused 5- or 6-membered carbocyclic or heterocyclic rings, or (III) both.
    Type: Application
    Filed: September 16, 2020
    Publication date: April 1, 2021
    Applicant: UNIVERSAL DISPLAY CORPORATION
    Inventors: Zhiqiang JI, Pierre-Luc T. BOUDREAULT, Wei-Chun SHIH, Walter YEAGER, Bert ALLEYNE
  • Publication number: 20210070792
    Abstract: Provided are compounds of Formula Ir(LA)X(LC)y, wherein: ligand LA has Formula I? and ligand LC has Formula II?
    Type: Application
    Filed: August 6, 2020
    Publication date: March 11, 2021
    Applicant: Universal Display Corporation
    Inventors: Wei-Chun SHIH, Zhiqiang JI, Pierre-Luc T. BOUDREAULT, Hsiao-Fan CHEN, Tongxiang LU
  • Patent number: 10943995
    Abstract: A method includes forming a semiconductor fin, performing a first passivation step on a top surface of the semiconductor fin using a first passivation species, and performing a second passivation step on sidewalls of the semiconductor fin using a second passivation species different from the first passivation species. A gate stack is formed on a middle portion of the semiconductor fin. A source or a drain region is formed on a side of the gate stack, wherein the source or drain region and the gate stack form a Fin Field-Effect Transistor (FinFET).
    Type: Grant
    Filed: December 11, 2018
    Date of Patent: March 9, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Clement Hsingjen Wann, Ling-Yen Yeh, Chi-Yuan Shih, Wei-Chun Tsai
  • Publication number: 20210047354
    Abstract: Provided are compounds having a ligand LA of Formula I that are useful as emissive compounds in organic light emitting devices.
    Type: Application
    Filed: July 28, 2020
    Publication date: February 18, 2021
    Applicant: Universal Display Corporation
    Inventors: Wei-Chun SHIH, Hsiao-Fan CHEN, Pierre-Luc T. BOUDREAULT, Bert ALLEYNE, Zhiqiang JI
  • Publication number: 20210002311
    Abstract: Provided are organometallic compounds. Also provided are formulations comprising these organometallic compounds. Further provided are OLEDs and related consumer products that utilize these organometallic compounds.
    Type: Application
    Filed: June 12, 2020
    Publication date: January 7, 2021
    Applicant: Universal Display Corporation
    Inventors: Zhiqiang JI, Pierre-Luc T. BOUDREAULT, Wei-Chun SHIH, Alan DEANGELIS
  • Publication number: 20200369699
    Abstract: Provided is a compound comprising a first ligand LA of
    Type: Application
    Filed: May 5, 2020
    Publication date: November 26, 2020
    Applicant: UNIVERSAL DISPLAY CORPORATION
    Inventors: Wei-Chun SHIH, Pierre-Luc T. BOUDREAULT, Bert ALLEYNE, Tyler FLEETHAM, Zhiqiang JI, Hsiao-Fan CHEN, Jerald FELDMAN
  • Publication number: 20200358008
    Abstract: Provided are a compounds comprising a first ligand LA of
    Type: Application
    Filed: April 22, 2020
    Publication date: November 12, 2020
    Applicant: Universal Display Corporation
    Inventors: Zhiqiang JI, Pierre-Luc T. BOUDREAULT, Wei-Chun SHIH
  • Publication number: 20200350502
    Abstract: Provided are compounds having a first ligand LA of that are useful in OLEDs as emitters.
    Type: Application
    Filed: April 29, 2020
    Publication date: November 5, 2020
    Applicant: UNIVERSAL DISPLAY CORPORATION
    Inventors: Zhiqiang JI, Pierre-Luc T. BOUDREAULT, Jui-Yi TSAI, Miguel A. ESTERUELAS, Ana M. LOPEZ, Enrique O√ĎATE, Esther RAGA, Wei-Chun SHIH
  • Publication number: 20200295277
    Abstract: Provided are organometallic compounds. Also provided are formulations comprising these organometallic compounds. Further provided are OLEDs and related consumer products that utilize these organometallic compounds.
    Type: Application
    Filed: May 27, 2020
    Publication date: September 17, 2020
    Applicant: Universal Display Corporation
    Inventors: George FITZGERALD, Joseph A. MACOR, Jason BROOKS, Hsiao-Fan CHEN, Geza SZIGETHY, Diana DRENNAN, Neil PALMER, Wei-Chun SHIH, Pierre-Luc T. BOUDREAULT, Zhiqiang JI, Woo-Young SO
  • Patent number: 10749039
    Abstract: A high-performance TFT substrate (100) for a flat panel display includes a substrate (110), a first conductive layer (130) on the substrate (110), a semiconductor layer (103) positioned on the first conductive layer (130), and a second conductive layer (150) positioned on the semiconductor layer (103). The first conductive layer (130) defines a gate electrode (101). The second conductive layer (150) defines a source electrode (105) and a drain electrode (106) spaced apart from the source electrode (105). The second conductive layer (150) includes a first layer (151) on the semiconductor layer (103) and a second layer (152) positioned on the first layer (151). The first layer (151) can be made of metal oxide. The second layer (152) can be made of aluminum or aluminum alloy.
    Type: Grant
    Filed: December 6, 2016
    Date of Patent: August 18, 2020
    Assignees: HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD., HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Yi-Chun Kao, Po-Li Shih, Wei-Chih Chang, I-Wei Wu
  • Patent number: 10727309
    Abstract: A thin film transistor array panel includes a first conductive layer (102) including a gate electrode; a channel layer (104) disposed over the gate; and a second conductive layer (105) disposed over the channel layer (104). The second conductive layer (105) includes a multi-layered portion defining a source electrode (105a) and a drain electrode (105b), which includes a first sub-layer (105-1), a second sub-layer (105-2), and a third sub-layer (105-3) sequentially disposed one over another. Both the third and the first sub-layers (105-3, 105-1) include indium and zinc oxide materials. An indium to zinc content ratio in the first sub-layer (105-1) is greater than that in the third sub-layer (105-3).
    Type: Grant
    Filed: December 7, 2016
    Date of Patent: July 28, 2020
    Assignees: HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD., HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Yi-Chun Kao, Hsin-Hua Lin, Po-Li Shih, Wei-Chih Chang, I-Min Lu, I-Wei Wu
  • Publication number: 20200197458
    Abstract: The present disclosure provides various cyanobacterial extracts exhibiting antiviral activity to a wide spectrum of viruses, such as enterovirus (EV), respiratory syncytial virus (RSV), Human Herpesvirus (HHV), Ebola virus, porcine epidemic diarrhea virus (PEDV), and porcine reproductive and respiratory syndrome virus (PRRSV). The cyanobacterial extract is prepared from biomass of A. maxima (or Spirulina maxima). Also disclosed herein are process for preparing the cyanobacterial extract and uses of the cyanobacterial extract.
    Type: Application
    Filed: February 27, 2020
    Publication date: June 25, 2020
    Inventors: Chuang-Chun CHIUH, Yi-Hsiang CHEN, Gi-Kung CHANG, Jing-Yun CHEN, Ya-Chun LIAO, Xin-Wen HUANG, Shin-Ru SHIH, Wei CHEN
  • Patent number: 10672880
    Abstract: A conductive layer for a thin film transistor (TFT) array panel includes a multi-layered portion defining a source electrode and a drain electrode of a TFT device, and includes a first sub-layer, a second sub-layer, a third sub-layer, and at least one additional sub-layer. The third and the first sub-layers include indium and zinc oxide materials. An indium to zinc content ratio in the first sub-layer is greater than that in the third sub-layer. An indium to zinc content ratio in the additional sub-layer is formulated between that in the first and the third sub-layers. The content ratio differentiation between the first and the third sub-layers affects a lateral etch profile associated with a gap generated in the second conductive layer between the source and the drain electrodes, where the associated gap width in the third sub-layer is wider than that in the first sub-layer.
    Type: Grant
    Filed: December 13, 2016
    Date of Patent: June 2, 2020
    Assignees: HONG FU JIN PRECISION INDUSTRY (SheZhen) CO., LTD., HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Po-Li Shih, Yi-Chun Kao, Hsin-Hua Lin, Chih-Lung Lee, Wei-Chih Chang, I-Min Lu
  • Patent number: 10653735
    Abstract: Use of Mesembryanthemum crystallinum L. callus extract in the manufacture of a medicament or a skin care product, wherein the medicament or skin care product is for at least one of delaying skin cell aging, nursing skin, repairing skin, treating skin cancer, and preventing skin cancer.
    Type: Grant
    Filed: March 17, 2017
    Date of Patent: May 19, 2020
    Assignee: TCI CO., LTD.
    Inventors: Yung-Hsiang Lin, Wei-Wen Kuo, I-Hui Chen, Yi-Chun Chen, Hui-Hsin Shih, Yun-Ching Tsai
  • Patent number: 10644662
    Abstract: A amplifier circuit in some embodiment includes a differential amplifier have a pair of current sources. Each of the current sources includes two or more current-generating transistors and respective switching transistors, which can be turned on and off by a gain input code to tune the gain of the amplifier. A common-mode controller includes a similar pair of current sources as the differential amplifier. The common mode controller receives a common-mode signal of the input signal and a common-mode gain input code, and maintains the common-mode gain of the amplifier circuit when the differential gain changes. The amplifier circuit is switchable between a buffer mode and an equalizer mode.
    Type: Grant
    Filed: November 29, 2017
    Date of Patent: May 5, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shu-Chun Yang, Wei Chih Chen, Yu-Nan Shih
  • Patent number: 10627309
    Abstract: Provided is a micro-distance lens detection device adapted to detect a tested lens with a surface from a micro distance. The micro-distance lens detection device includes a light source module, a diffuser, a pattern test card, a collimator unit and an image pickup module which are arranged sequentially. The tested lens is disposed between the pattern test card and the collimator unit. The surface of the tested lens is separated from the light-emitting side of the pattern test card by the micro distance. The micro distance is less than 25 mm. Given the micro distance between the tested lens and the pattern test card, the optical resolution modulation transfer function (MTF) of the tested lens is correctly measured. Therefore, the lens detection device takes up little space.
    Type: Grant
    Filed: December 25, 2018
    Date of Patent: April 21, 2020
    Assignee: NEWMAX TECHNOLOGY CO., LTD.
    Inventors: Wei-Chun Shih, Yi-Huan Chu, Tsung-Chien Chiang
  • Patent number: 10535573
    Abstract: Disclosed herein is a method for forming a test key system for characterizing wafer processing states, the method comprising forming a plurality of shallow trench isolation structures (STIs) on a substrate of a wafer and in a scribe line of the wafer and forming a test key on the substrate of a wafer and in the scribe line of the wafer. Forming the test key comprises forming at least one test key group having a plurality of test key series, each of the plurality of test key series having a plurality of test pads, each one of the plurality of test key series having a first physical characteristic different from the first physical characteristic of other test key series the at least one first test key group.
    Type: Grant
    Filed: April 12, 2019
    Date of Patent: January 14, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Clement Hsingjen Wann, Ling-Yen Yeh, Chi-Yuan Shih, Wei-Chun Tsai
  • Patent number: 10504927
    Abstract: A semiconductor device comprises a multi-layered structure disposed over a substrate (101) and defining a composite lateral etch profile. The multi-layered structure includes a lower sub-layer (105-1) disposed over the substrate (101) and comprising a metal oxide material that includes indium and zinc, the indium and zinc content in the lower sub-layer (105-1) substantially defining a first indium to zinc content ratio; a middle sub-layer (105-2) disposed over the lower sub-layer (105-1) and comprising a metal material; an upper sub-layer (105-3) disposed over the middle sub-layer (105-2) and comprising a metal oxide material that includes indium and zinc, the indium to zinc content in the upper sub-layer (105-3) substantially defining a second indium to zinc content ratio smaller than the first indium to zinc content ratio; and a lateral byproduct layer formed over the lateral etched surface, comprising substantially an metal oxide of the metal material in the middle sub-layer (105-2).
    Type: Grant
    Filed: December 10, 2016
    Date of Patent: December 10, 2019
    Assignees: HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD., HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Yi-Chun Kao, Hsin-Hua Lin, Po-Li Shih, Wei-Chih Chang, I-Min Lu, I-Wei Wu
  • Publication number: 20190237370
    Abstract: Disclosed herein is a method for forming a test key system for characterizing wafer processing states, the method comprising forming a plurality of shallow trench isolation structures (STIs) on a substrate of a wafer and in a scribe line of the wafer and forming a test key on the substrate of a wafer and in the scribe line of the wafer. Forming the test key comprises forming at least one test key group having a plurality of test key series, each of the plurality of test key series having a plurality of test pads, each one of the plurality of test key series having a first physical characteristic different from the first physical characteristic of other test key series the at least one first test key group.
    Type: Application
    Filed: April 12, 2019
    Publication date: August 1, 2019
    Inventors: Clement Hsingjen Wann, Ling-Yen Yeh, Chi-Yuan Shih, Wei-Chun Tsai