Patents by Inventor Wei-Chung Sun
Wei-Chung Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230369460Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The manufacturing method of the semiconductor structure includes the following. A gate structure is formed on a substrate. A tilt implanting process is performed to implant group IV elements into the substrate to form a doped region, and the doped region is located on two sides of the gate structure and partially located under the gate structure. A part of the substrate on two sides of the gate structure is removed to form a first recess. A cleaning process is performed on the surface of the first recess. A wet etching process is performed on the first recess to form a second recess. A semiconductor layer is formed in the second recess.Type: ApplicationFiled: June 9, 2022Publication date: November 16, 2023Applicant: United Microelectronics Corp.Inventors: Kuang-Hsiu Chen, Wei-Chung Sun, Chao Nan Chen, Chun-Wei Yu, Kuan Hsuan Ku, Shao-Wei Wang
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Publication number: 20230253470Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.Type: ApplicationFiled: April 17, 2023Publication date: August 10, 2023Inventors: Chi-Sheng Lai, Yu-Fan Peng, Li-Ting Chen, Yu-Shan Lu, Yu-Bey Wu, Wei-Chung Sun, Yuan-Ching Peng, Kuei-Yu Kao, Shih-Yao Lin, Chih-Han Lin, Pei-Yi Liu, Jing Yi Yan
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Patent number: 11652003Abstract: Processes to form differently-pitched gate structures are provided. An example method includes providing a workpiece having a substrate and semiconductor fins spaced apart from one another by an isolation feature, depositing a gate material layer over the workpiece, forming a patterned hard mask over the gate material layer, the patterned hard mask including differently-pitched elongated features, performing a first etch process using the patterned hard mask as an etch mask through the gate material layer to form a trench, performing a second etch process using the patterned hard mask as an etch mask to extend the trench to a top surface of the isolation feature, and performing a third etch process using the patterned hard mask to extend the trench into the isolation feature. The first etch process includes use of carbon tetrafluoride and is free of use of oxygen gas.Type: GrantFiled: February 28, 2022Date of Patent: May 16, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chi-Sheng Lai, Wei-Chung Sun, Li-Ting Chen, Kuei-Yu Kao, Chih-Han Lin
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Patent number: 11631745Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.Type: GrantFiled: April 2, 2021Date of Patent: April 18, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chi-Sheng Lai, Yu-Fan Peng, Li-Ting Chen, Yu-Shan Lu, Yu-Bey Wu, Wei-Chung Sun, Yuan-Ching Peng, Kuei-Yu Kao, Shih-Yao Lin, Chih-Han Lin, Pei-Yi Liu, Jing Yi Yan
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Patent number: 11557590Abstract: A device includes a plurality of fin structures that each protrude vertically upwards out of a substrate and each extend in a first direction in a top view. A gate structure is disposed over the fin structures. The gate structure extends in a second direction in the top view. The second direction is different from the first direction. The fin structures have a fin pitch equal to a sum of: a dimension of one of the fin structures in the second direction and a distance between an adjacent pair of the fin structures in the second direction. An end segment of the gate structure extends beyond an edge of a closest one of the fin structures in the second direction. The end segment has a tapered profile in the top view or is at least 4 times as long as the fin pitch in the second direction.Type: GrantFiled: June 11, 2020Date of Patent: January 17, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chi-Sheng Lai, Wei-Chung Sun, Li-Ting Chen, Kuei-Yu Kao, Chih-Han Lin
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Publication number: 20220359511Abstract: A device includes a plurality of fin structures that each protrude vertically upwards out of a substrate and each extend in a first direction in a top view. A gate structure is disposed over the fin structures. The gate structure extends in a second direction in the top view. The second direction is different from the first direction. The fin structures have a fin pitch equal to a sum of: a dimension of one of the fin structures in the second direction and a distance between an adjacent pair of the fin structures in the second direction. An end segment of the gate structure extends beyond an edge of a closest one of the fin structures in the second direction. The end segment has a tapered profile in the top view or is at least 4 times as long as the fin pitch in the second direction.Type: ApplicationFiled: July 27, 2022Publication date: November 10, 2022Inventors: Chi-Sheng Lai, Wei-Chung Sun, Li-Ting Chen, Kuei-Yu Kao, Chih-Han Lin
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Publication number: 20220328420Abstract: An alignment structure for a semiconductor device and a method of forming same are provided. A method includes forming an isolation region over a substrate and forming an alignment structure over the isolation region. Forming the alignment structure includes forming a sacrificial gate electrode layer over the substrate and the isolation region. The sacrificial gate electrode layer is patterned to form a plurality of first sacrificial gates over the isolation region. At least one of the plurality of first sacrificial gates is reshaped. The at least one of the plurality of first sacrificial gates is disposed at an edge of the alignment structure in a plan view. A sidewall of the at least one of the plurality of first sacrificial gates comprises a notch at an interface between the at least one of the plurality of first sacrificial gates and the isolation region.Type: ApplicationFiled: June 29, 2022Publication date: October 13, 2022Inventors: Chi-Sheng Lai, Wei-Chung Sun, Li-Ting Chen, Kuei-Yu Kao, Chih-Han Lin
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Patent number: 11393769Abstract: An alignment structure for a semiconductor device and a method of forming same are provided. A method includes forming an isolation region over a substrate and forming an alignment structure over the isolation region. Forming the alignment structure includes forming a sacrificial gate electrode layer over the substrate and the isolation region. The sacrificial gate electrode layer is patterned to form a plurality of first sacrificial gates over the isolation region. At least one of the plurality of first sacrificial gates is reshaped. The at least one of the plurality of first sacrificial gates is disposed at an edge of the alignment structure in a plan view. A sidewall of the at least one of the plurality of first sacrificial gates comprises a notch at an interface between the at least one of the plurality of first sacrificial gates and the isolation region.Type: GrantFiled: May 8, 2020Date of Patent: July 19, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chi-Sheng Lai, Wei-Chung Sun, Li-Ting Chen, Kuei-Yu Kao, Chih-Han Lin
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Publication number: 20220181215Abstract: Processes to form differently-pitched gate structures are provided. An example method includes providing a workpiece having a substrate and semiconductor fins spaced apart from one another by an isolation feature, depositing a gate material layer over the workpiece, forming a patterned hard mask over the gate material layer, the patterned hard mask including differently-pitched elongated features, performing a first etch process using the patterned hard mask as an etch mask through the gate material layer to form a trench, performing a second etch process using the patterned hard mask as an etch mask to extend the trench to a top surface of the isolation feature, and performing a third etch process using the patterned hard mask to extend the trench into the isolation feature. The first etch process includes use of carbon tetrafluoride and is free of use of oxygen gas.Type: ApplicationFiled: February 28, 2022Publication date: June 9, 2022Inventors: Chi-Sheng Lai, Wei-Chung Sun, Li-Ting Chen, Kuei-Yu Kao, Chih-Han Lin
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Patent number: 11264282Abstract: Processes to form differently-pitched gate structures are provided. An example method includes providing a workpiece having a substrate and semiconductor fins spaced apart from one another by an isolation feature, depositing a gate material layer over the workpiece, forming a patterned hard mask over the gate material layer, the patterned hard mask including differently-pitched elongated features, performing a first etch process using the patterned hard mask as an etch mask through the gate material layer to form a trench, performing a second etch process using the patterned hard mask as an etch mask to extend the trench to a top surface of the isolation feature, and performing a third etch process using the patterned hard mask to extend the trench into the isolation feature. The first etch process includes use of carbon tetrafluoride and is free of use of oxygen gas.Type: GrantFiled: February 25, 2020Date of Patent: March 1, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chi-Sheng Lai, Wei-Chung Sun, Li-Ting Chen, Kuei-Yu Kao, Chih-Han Lin
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Patent number: 11205647Abstract: A semiconductor device and method are provided whereby a series of spacers are formed in a first region and a second region of a substrate. The series of spacers in the first region are patterned while the series of spacers in the second region are protected in order to separate the properties of the spacers in the first region from the properties of the spacers in the second region.Type: GrantFiled: February 3, 2020Date of Patent: December 21, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Yao Lin, Kuei-Yu Kao, Chi-Sheng Lai, Chih-Han Lin, Wei-Chung Sun, Ming-Ching Chang, Chao-Cheng Chen
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Publication number: 20210359095Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.Type: ApplicationFiled: April 2, 2021Publication date: November 18, 2021Inventors: Chi-Sheng Lai, Yu-Fan Peng, Li-Ting Chen, Yu-Shan Lu, Yu-Bey Wu, Wei-Chung Sun, Yuan-Ching Peng, Kuei-Yu Kao, Shih-Yao Lin, Chih-Han Lin, Pei-Yi Liu, Jing Yi Yan
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Publication number: 20210265219Abstract: Processes to form differently-pitched gate structures are provided. An example method includes providing a workpiece having a substrate and semiconductor fins spaced apart from one another by an isolation feature, depositing a gate material layer over the workpiece, forming a patterned hard mask over the gate material layer, the patterned hard mask including differently-pitched elongated features, performing a first etch process using the patterned hard mask as an etch mask through the gate material layer to form a trench, performing a second etch process using the patterned hard mask as an etch mask to extend the trench to a top surface of the isolation feature, and performing a third etch process using the patterned hard mask to extend the trench into the isolation feature. The first etch process includes use of carbon tetrafluoride and is free of use of oxygen gas.Type: ApplicationFiled: February 25, 2020Publication date: August 26, 2021Inventors: Chi-Sheng Lai, Wei-Chung Sun, Li-Ting Chen, Kuei-Yu Kao, Chih-Han Lin
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Publication number: 20210257359Abstract: A device includes a plurality of fin structures that each protrude vertically upwards out of a substrate and each extend in a first direction in a top view. A gate structure is disposed over the fin structures. The gate structure extends in a second direction in the top view. The second direction is different from the first direction. The fin structures have a fin pitch equal to a sum of: a dimension of one of the fin structures in the second direction and a distance between an adjacent pair of the fin structures in the second direction. An end segment of the gate structure extends beyond an edge of a closest one of the fin structures in the second direction. The end segment has a tapered profile in the top view or is at least 4 times as long as the fin pitch in the second direction.Type: ApplicationFiled: June 11, 2020Publication date: August 19, 2021Inventors: Chi-Sheng Lai, Wei-Chung Sun, Li-Ting Chen, Kuei-Yu Kao, Chih-Han Lin
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Publication number: 20210257310Abstract: An alignment structure for a semiconductor device and a method of forming same are provided. A method includes forming an isolation region over a substrate and forming an alignment structure over the isolation region. Forming the alignment structure includes forming a sacrificial gate electrode layer over the substrate and the isolation region. The sacrificial gate electrode layer is patterned to form a plurality of first sacrificial gates over the isolation region. At least one of the plurality of first sacrificial gates is reshaped. The at least one of the plurality of first sacrificial gates is disposed at an edge of the alignment structure in a plan view. A sidewall of the at least one of the plurality of first sacrificial gates comprises a notch at an interface between the at least one of the plurality of first sacrificial gates and the isolation region.Type: ApplicationFiled: May 8, 2020Publication date: August 19, 2021Inventors: Chi-Sheng Lai, Wei-Chung Sun, Li-Ting Chen, Kuei-Yu Kao, Chih-Han Lin
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Publication number: 20200411514Abstract: A semiconductor device and method are provided whereby a series of spacers are formed in a first region and a second region of a substrate. The series of spacers in the first region are patterned while the series of spacers in the second region are protected in order to separate the properties of the spacers in the first region from the properties of the spacers in the second region.Type: ApplicationFiled: February 3, 2020Publication date: December 31, 2020Inventors: Shih-Yao Lin, Kuei-Yu Kao, Chi-Sheng Lai, Chih-Han Lin, Wei-Chung Sun, Ming-Ching Chang, Chao-Cheng Chen
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Publication number: 20100213621Abstract: Method for increasing the moisture-proof capability of a chip includes coating moisture-proof glue at the chink of the chip. More particularly, when the packaging structure carries a chink exposed to outside of the chip, the chink is coated with the moisture-proof glue for preventing moisture from entering the internal part of the chip so as to increase the moisture-proof capability of the chip.Type: ApplicationFiled: January 20, 2010Publication date: August 26, 2010Inventors: Wei-Chung Sun, Chin-Ming Lin, Wei-Jen Chen, Chin-Feng Wu