Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.

Abstract: In an embodiment, a package includes an integrated circuit device attached to a substrate; an encapsulant disposed over the substrate and laterally around the integrated circuit device, wherein a top surface of the encapsulant is coplanar with the top surface of the integrated circuit device; and a heat dissipation structure disposed over the integrated circuit device and the encapsulant, wherein the heat dissipation structure includes a spreading layer disposed over the encapsulant and the integrated circuit device, wherein the spreading layer includes a plurality of islands, wherein at least a portion of the islands are arranged as lines extending in a first direction in a plan view; a plurality of pillars disposed over the islands of the spreading layer; and nanostructures disposed over the pillars.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure, the method includes forming a buffer layer over a substrate. An active layer is formed on the buffer layer. A top electrode is formed on the active layer. An etch process is performed on the buffer layer and the substrate to define a plurality of pillar structures. The plurality of pillar structures include a first pillar structure laterally offset from a second pillar structure. At least portions of the first and second pillar structures are spaced laterally between sidewalls of the top electrode.

Abstract: A light-transmitting antenna includes a substrate, a first and a second conductive pattern. The first and the second conductive pattern is disposed on a first and a second surface of the substrate respectively. The first conductive pattern includes a first feeder unit, a first and a second radiation unit, a first and a second coupling unit and a first parasitic unit. The first feeder unit is connected to the second radiation unit. The first and the second radiation unit are located between the first and the second coupling unit. One side and the other side of the first parasitic unit is connected to the second coupling unit and adjacent to the first coupling unit respectively. The second conductive pattern includes a second feeder unit, a third coupling unit, a second parasitic unit, and a fourth coupling unit.

Abstract: A light-transmitting antenna includes a substrate, a first conductive pattern, and a second conductive pattern. The first conductive pattern has a first feeder unit, a first radiation unit, a second radiation unit, and a first connection unit. The first feeder unit and the first connection unit are connected to two sides of the first radiation unit. The first connection unit connects the first radiation unit and the second radiation unit. The second conductive pattern has a second feeder unit, a third radiation unit, a fourth radiation unit, and a second connection unit. The second feeder unit and the second connection unit are connected to two sides of the third radiation unit. The second connection unit connects the third radiation unit and the fourth radiation unit. An orthogonal projection of the second feeder unit on a first surface of the substrate at least partially overlaps the first feeder unit.

Abstract: A method for fabricating a semiconductor device includes the steps of: providing a substrate, wherein the substrate comprises a MRAM region and a logic region; forming a magnetic tunneling junction (MTJ) on the MRAM region; forming a top electrode on the MTJ; and then performing a flowable chemical vapor deposition (FCVD) process to form a first inter-metal dielectric (IMD) layer around the top electrode and the MTJ.

Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.

Abstract: The present invention relates to a pharmaceutical composition for treating liver diseases, comprising a miRNA mimic containing a single strand RNA molecule of hsa-miR-21-3p (SEQ ID No: 35). The miRNA mimic of the present invention can be used to treat liver diseases through regulating the expression of methionine adenosyltransferase 2A and 2B (MAT2A and MAT2B), acetyl-CoA carboxylase 1 and 2 (ACACA and ACACB), diglyceride acyltransferase 2 (DGAT2), and so on. In addition, the present invention also relates to a method for reducing the expression of the above-mentioned enzymes.

Abstract: The present invention relates to a pharmaceutical composition for treating liver diseases, comprising a miRNA mimic containing a single strand RNA molecule of hsa-miR-21-3p (SEQ ID No: 35). The miRNA mimic of the present invention can be used to treat liver diseases through regulating the expression of methionine adenosyltransferase 2A and 2B (MAT2A and MAT2B), acetyl-CoA carboxylase 1 and 2 (ACACA and ACACB), diglyceride acyltransferase 2 (DGAT2), and so on. In addition, the present invention also relates to a method for reducing the expression of the above-mentioned enzymes.

Abstract: The present invention relates to a pharmaceutical composition for treating liver diseases, comprising a miRNA mimic containing a single strand RNA molecule of hsa-miR-21-3p (SEQ ID No: 35). The miRNA mimic of the present invention can be used to treat liver diseases through regulating the expression of methionine adenosyltransferase 2A and 2B (MAT2A and MAT2B), acetyl-CoA carboxylase 1 and 2 (ACACA and ACACB), diglyceride acyltransferase 2 (DGAT2), and so on. In addition, the present invention also relates to a method for reducing the expression of the above-mentioned enzymes.