Abstract: A switching regulator includes a low-side switching transistor, a snubber transistor, a first pull-down transistor, and a second pull-down transistor. The low-side switching transistor includes a first current terminal and a second current terminal. The first current terminal is coupled to a switching node. The second current terminal is coupled to a ground terminal. The snubber transistor includes a first current terminal, a second current terminal, and a control terminal. The first current terminal is coupled to the switching node. The second current terminal is coupled to the ground terminal. The first pull-down transistor is coupled between the control terminal of the snubber transistor and the ground terminal. The second pull-down transistor is coupled between the control terminal of the snubber transistor and the ground terminal.

Abstract: A receiving structure providing real-time information as to the materials constituting its contents includes a box body, a first side plate, and a second side plate. The box body, the first side plate, and the second side plate forming a receiving space, and the receiving space receives materials. A discharge port is formed between the second side plate and the first side plate, the discharge port is in communication with the receiving space, and the discharge port is configured to take out the material. A material checking unit is provided on the first side plate, the material checking unit detects and enables real time identification of the materials in the receiving structure.

Abstract: A MOS capacitor includes a substrate having a capacitor forming region thereon, an ion well having a first conductivity type in the substrate, a counter doping region having a second conductivity type in the ion well within the capacitor forming region, a capacitor dielectric layer on the ion well within the capacitor forming region, a gate electrode on the capacitor dielectric layer, a source doping region having the second conductivity type on a first side of the gate electrode within the capacitor forming region, and a drain doping region having the second conductivity type on a second side of the gate electrode within the capacitor forming region.

Abstract: An eye-diagram index analytic method includes: calculating a transfer function of multiple coupled lines; converting the transfer function into a pulse response; calculating an eye-diagram index according to the pulse response; and correcting the eye-diagram index according to peak distortion analysis.

Abstract: A cantilever for gas flow direction control configured to support an electrode housing bowl in an associated etch process chamber. The cantilever may have a cross-section that is circular, elliptical, or airfoil shaped. The shape of the cantilever induces the flow of gas and etch products within the chamber around the cantilever, reducing turbulence around the edge of a wafer.

Abstract: Apparatus and methods for determining wafer characters are disclosed. In one example, an apparatus is disclosed. The apparatus includes: a processing tool configured to process a semiconductor wafer; a device configured to read an optical character disposed on the semiconductor wafer while the semiconductor wafer is located at the apparatus for wafer fabrication; and a controller configured to determine whether the optical character matches a predetermined character corresponding to the semiconductor wafer based on the optical character read in real-time at the apparatus.

Abstract: Apparatus and methods for determining wafer characters are disclosed. In one example, an apparatus is disclosed. The apparatus includes: a processing tool configured to process a semiconductor wafer; a device configured to read an optical character disposed on the semiconductor wafer while the semiconductor wafer is located at the apparatus for wafer fabrication; and a controller configured to determine whether the optical character matches a predetermined character corresponding to the semiconductor wafer based on the optical character read in real-time at the apparatus.

Abstract: A switching regulator includes a low-side switching transistor, a snubber transistor, a first pull-down transistor, and a second pull-down transistor. The low-side switching transistor includes a first current terminal and a second current terminal. The first current terminal is coupled to a switching node. The second current terminal is coupled to a ground terminal. The snubber transistor includes a first current terminal, a second current terminal, and a control terminal. The first current terminal is coupled to the switching node. The second current terminal is coupled to the ground terminal. The first pull-down transistor is coupled between the control terminal of the snubber transistor and the ground terminal. The second pull-down transistor is coupled between the control terminal of the snubber transistor and the ground terminal.

Abstract: A semiconductor device package includes a substrate having a surface, a conductive element disposed on the surface of the substrate, and an encapsulant disposed on the surface of the substrate and covering the conductive element. The conductive element has an upper surface facing away from the substrate and exposed from the encapsulant. Further, a roughness of the upper surface of the conductive element is greater than a roughness of a side surface of the conductive element.

Abstract: An apparatus for detecting a processing tool defect is provided. The apparatus includes a processing tool having a processing chamber configured to process a semiconductor wafer. The processing chamber includes a gas inlet and a gas outlet. An exhaust pipe is connected to the gas outlet of the processing chamber. A particle counter is configured to real-time measure a parameter of particles in the exhaust pipe. A method for detecting a processing tool defect is also provided in the present disclosure.

Abstract: In some examples, an apparatus includes a tuning circuit having a tuning output and first, second, third, fourth, and fifth tuning inputs, wherein the first tuning input is coupled to a sensor input terminal, the second tuning input is coupled to a first sensor threshold terminal, and the third tuning input is coupled to a second sensor threshold terminal, an avalanche diode having a first anode and a first cathode, wherein the first cathode is coupled to a power terminal, and the first anode is coupled to the fourth tuning input, a diode having a second anode and a second cathode, a transistor coupled between the power terminal and the second anode and having a control terminal coupled to the tuning output, and a timeout circuit having a timeout input coupled to the tuning output, and a timeout output coupled to the fifth tuning input.

Abstract: In an example, a method includes providing a signal to a driver for a switching voltage regulator to turn off a high-side field effect transistor (FET) of the switching voltage regulator. The method also includes reducing a voltage at a source of the high-side FET. The method includes responsive to the signal, turning off a pull-down FET coupled to a gate of the high-side FET. The method also includes commutating current from the high-side FET to a low-side FET.

Abstract: A switching regulator includes a low-side switching transistor, a snubber transistor, a first pull-down transistor, and a second pull-down transistor. The low-side switching transistor includes a first current terminal and a second current terminal. The first current terminal is coupled to a switching node. The second current terminal is coupled to a ground terminal. The snubber transistor includes a first current terminal, a second current terminal, and a control terminal. The first current terminal is coupled to the switching node. The second current terminal is coupled to the ground terminal. The first pull-down transistor is coupled between the control terminal of the snubber transistor and the ground terminal. The second pull-down transistor is coupled between the control terminal of the snubber transistor and the ground terminal.

Abstract: A chamber liner for a semiconductor process chamber. The chamber liner includes an outer sidewall having a first circumference, and an inner sidewall have a second circumference that is less than the first circumference. The chamber liner also includes a chamber liner fence that is positioned between the outer sidewall and the inner sidewall. The chamber liner fence includes a first zone having one or more first zone openings, a second zone having one or more second zone openings, and a third zone having one or more third zone opening. The chamber liner further includes a split door positioned in the outer sidewall. Each of the first, second, and third zones have different widths, with the width of the third zone opening less than the width of the second zone opening, and the second zone opening less than or equal to the width of the first zone opening.

Abstract: A switching regulator includes a low-side switching transistor, a snubber transistor, a first pull-down transistor, and a second pull-down transistor. The low-side switching transistor includes a first current terminal and a second current terminal. The first current terminal is coupled to a switching node. The second current terminal is coupled to a ground terminal. The snubber transistor includes a first current terminal, a second current terminal, and a control terminal. The first current terminal is coupled to the switching node. The second current terminal is coupled to the ground terminal. The first pull-down transistor is coupled between the control terminal of the snubber transistor and the ground terminal. The second pull-down transistor is coupled between the control terminal of the snubber transistor and the ground terminal.

Abstract: A semiconductor device package includes a substrate having a surface, a conductive element disposed on the surface of the substrate, and an encapsulant disposed on the surface of the substrate and covering the conductive element. The conductive element has an upper surface facing away from the substrate and exposed from the encapsulant. Further, a roughness of the upper surface of the conductive element is greater than a roughness of a side surface of the conductive element.

Abstract: In an embodiment, a method includes: receiving, within a processing chamber, a wafer with a photoresist mask above a metal layer, wherein the processing chamber is connected to a gas source; applying an etchant configured to etch the metal layer in accordance with the photoresist mask within the processing chamber; and applying gas from the gas source to perform plasma ashing in the processing chamber.

Abstract: In an example, a method includes providing a signal to a driver for a switching voltage regulator to turn off a high-side field effect transistor (FET) of the switching voltage regulator. The method also includes reducing a voltage at a source of the high-side FET. The method includes responsive to the signal, turning off a pull-down FET coupled to a gate of the high-side FET. The method also includes commutating current from the high-side FET to a low-side FET.