Abstract: The present teaching relates to content recommendation. Content is selected from multiple pieces of content for recommending to a user based on a user embedding and contextual information. Performance of the user with respect to the recommended content is obtained. The user embedding for the user is adapted based on the performance information via a memory- dependency aware model previously trained to learn past interests of the user and intensities of such past interests. An updated user embedding is generated to represent current interests of the user via the adapted user embedding produced by the memory-dependency aware model according to the known intensities of the past interests of the user as well as user's interest exhibited in the recommended content.

Abstract: An apparatus is provided. The apparatus includes one or more chamber walls defining a processing chamber. The apparatus includes a gas inlet port defined by one or more inlet port walls configured to conduct a process gas into the processing chamber. The apparatus includes an exhaust port defined by one or more exhaust port walls through which the process gas is removed from the processing chamber. The apparatus includes an exhaust baffle having an oval-shaped opening defined by one or more exhaust baffle walls. A flow path, along which the process gas flows as the process gas is removed from the processing chamber, passes through the oval-shaped opening.

Abstract: The present teaching relates to content recommendation. Content is selected from multiple pieces of content for recommending to a user based on a user embedding and contextual information. Performance of the user with respect to the recommended content is obtained. The user embedding for the user is adapted based on the performance information via a memory-dependency aware model previously trained to learn past interests of the user and intensities of such past interests. An updated user embedding is generated to represent current interests of the user via the adapted user embedding produced by the memory-dependency aware model according to the known intensities of the past interests of the user as well as user's interest exhibited in the recommended content.

Abstract: A coolant conduit includes at least one tubular wall and at least one arcuate slit hole. The arcuate slit hole is formed in an outer wall surface of the tubular wall and extends from the outer wall surface into an inner wall surface of the tubular wall. The arcuate slit hole has a height and a width. A ratio of the width to the height is greater than about 1.

Abstract: A cantilever for gas flow direction control configured to support an electrode housing bowl in an associated etch process chamber. The cantilever may have a cross-section that is circular, elliptical, or airfoil shaped. The shape of the cantilever induces the flow of gas and etch products within the chamber around the cantilever, reducing turbulence around the edge of a wafer.

Abstract: The present teaching relates to content recommendation. Content is selected from multiple pieces of content for recommending to a user based on a user embedding and contextual information. Performance of the user with respect to the recommended content is obtained. The user embedding for the user is adapted based on the performance information via a memory-dependency aware model previously trained to learn past interests of the user and intensities of such past interests. An updated user embedding is generated to represent current interests of the user via the adapted user embedding produced by the memory-dependency aware model according to the known intensities of the past interests of the user as well as user's interest exhibited in the recommended content.

Abstract: A cantilever for gas flow direction control configured to support an electrode housing bowl in an associated etch process chamber. The cantilever may have a cross-section that is circular, elliptical, or airfoil shaped. The shape of the cantilever induces the flow of gas and etch products within the chamber around the cantilever, reducing turbulence around the edge of a wafer.

Abstract: A chamber liner for a semiconductor process chamber. The chamber liner includes an outer sidewall having a first circumference, and an inner sidewall have a second circumference that is less than the first circumference. The chamber liner also includes a chamber liner fence that is positioned between the outer sidewall and the inner sidewall. The chamber liner fence includes a first zone having one or more first zone openings, a second zone having one or more second zone openings, and a third zone having one or more third zone opening. The chamber liner further includes a split door positioned in the outer sidewall. Each of the first, second, and third zones have different widths, with the width of the third zone opening less than the width of the second zone opening, and the second zone opening less than or equal to the width of the first zone opening.

Abstract: In an embodiment, a method includes: receiving, within a processing chamber, a wafer with a photoresist mask above a metal layer, wherein the processing chamber is connected to a gas source; applying an etchant configured to etch the metal layer in accordance with the photoresist mask within the processing chamber; and applying gas from the gas source to perform plasma ashing in the processing chamber.

Abstract: A cantilever for gas flow direction control configured to support an electrode housing bowl in an associated etch process chamber. The cantilever may have a cross-section that is circular, elliptical, or airfoil shaped. The shape of the cantilever induces the flow of gas and etch products within the chamber around the cantilever, reducing turbulence around the edge of a wafer.

Abstract: An apparatus for perform metal etching and plasma ashing includes: a processing chamber having an enclosed area; an electrostatic chuck disposed in the enclosed area and configured to secure a wafer, the electrostatic chuck connected with a bias power; at least one coil connected with a source power; a etchant conduit configured provide an etchant to a metal of the wafer within the processing chamber in accordance with a photoresist mask of the wafer; and a gas intake conduit connected with a gas source, wherein the gas intake conduit is configured to supply the processing chamber with a gas from the gas source during performance of plasma ashing within the processing chamber.

Abstract: A method for making a semiconductor device is disclosed. A substrate comprising semiconductor device elements is provided. A top conductive pad and an anti-reflective coating are patterned over the substrate. The anti-reflective coating is disposed on the top conductive pad. At least one passivation film is formed over the substrate and the anti-reflective coating. The at least one passivation film and the anti-reflective coating are etched to form a trench therein so as to expose a portion of the top conductive pad.

Abstract: In an embodiment, a method includes: receiving, within a processing chamber, a wafer with a photoresist mask above a metal layer, wherein the processing chamber is connected to a gas source; applying an etchant configured to etch the metal layer in accordance with the photoresist mask within the processing chamber; and applying gas from the gas source to perform plasma ashing in the processing chamber.

Abstract: A method for making a semiconductor device is disclosed. A substrate comprising semiconductor device elements is provided. A top conductive pad and an anti-reflective coating are patterned over the substrate. The anti-reflective coating is disposed on the top conductive pad. At least one passivation film is formed over the substrate and the anti-reflective coating. The at least one passivation film and the anti-reflective coating are etched to form a trench therein so as to expose a portion of the top conductive pad.