Patents by Inventor Wei Da LIN
Wei Da LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240136317Abstract: According to an exemplary embodiment, a substrate having a first area and a second area is provided. The substrate includes a plurality of pads. Each of the pads has a pad size. The pad size in the first area is larger than the pad size in the second area.Type: ApplicationFiled: January 3, 2024Publication date: April 25, 2024Inventors: Wei-Hung Lin, Hsiu-Jen Lin, Ming-Da Cheng, Yu-Min Liang, Chen-Shien Chen, Chung-Shi Liu
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Publication number: 20240128219Abstract: A semiconductor die including mechanical-stress-resistant bump structures is provided. The semiconductor die includes dielectric material layers embedding metal interconnect structures, a connection pad-and-via structure, and a bump structure including a bump via portion and a bonding bump portion. The entirety of a bottom surface of the bump via portion is located within an area of a horizontal top surface of a pad portion of the connection pad-and-via structure.Type: ApplicationFiled: December 6, 2023Publication date: April 18, 2024Inventors: Hui-Min Huang, Wei-Hung Lin, Kai Jun Zhan, Chang-Jung Hsueh, Wan-Yu Chiang, Ming-Da Cheng
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Patent number: 11961817Abstract: An apparatus for forming a package structure is provided. The apparatus includes a processing chamber for bonding a first package component and a second package component. The apparatus also includes a bonding head disposed in the processing chamber. The bonding head includes a plurality of vacuum tubes communicating with a plurality of vacuum devices. The apparatus further includes a nozzle connected to the bonding head and configured to hold the second package component. The nozzle includes a plurality of first holes that overlap the vacuum tubes. The nozzle also includes a plurality of second holes offset from the first holes, wherein the second holes overlap at least two edges of the second package component. In addition, the apparatus includes a chuck table disposed in the processing chamber, and the chuck table is configured to hold and heat the first package component.Type: GrantFiled: July 8, 2021Date of Patent: April 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Kai Jun Zhan, Chang-Jung Hsueh, Hui-Min Huang, Wei-Hung Lin, Ming-Da Cheng
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Patent number: 11955460Abstract: In accordance with some embodiments, a package-on-package (PoP) structure includes a first semiconductor package having a first side and a second side opposing the first side, a second semiconductor package having a first side and a second side opposing the first side, and a plurality of inter-package connector coupled between the first side of the first semiconductor package and the first side of the second semiconductor package. The PoP structure further includes a first molding material on the second side of the first semiconductor package. The second side of the second semiconductor package is substantially free of the first molding material.Type: GrantFiled: October 5, 2020Date of Patent: April 9, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Da Tsai, Meng-Tse Chen, Sheng-Feng Weng, Sheng-Hsiang Chiu, Wei-Hung Lin, Ming-Da Cheng, Ching-Hua Hsieh, Chung-Shi Liu
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Publication number: 20240096787Abstract: A semiconductor device structure is provided. The semiconductor device structure includes an interconnection structure over a semiconductor substrate and a conductive pillar over the interconnection structure. The conductive pillar has a protruding portion extending towards the semiconductor substrate from a lower surface of the conductive pillar. The semiconductor device structure also includes an upper conductive via between the conductive pillar and the interconnection structure and a lower conductive via between the upper conductive via and the interconnection structure. The lower conductive via is electrically connected to the conductive pillar through the upper conductive via. The conductive pillar extends across opposite sidewalls of the upper conductive via and opposite sidewalls of the lower conductive via. A top view of an entirety of the second conductive via is separated from a top view of an entirety of the protruding portion.Type: ApplicationFiled: November 29, 2023Publication date: March 21, 2024Inventors: Ming-Da CHENG, Wei-Hung LIN, Hui-Min HUANG, Chang-Jung HSUEH, Po-Hao TSAI, Yung-Sheng LIN
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Publication number: 20240088119Abstract: Provided are a package structure and a method of forming the same. The method includes providing a first package having a plurality of first dies and a plurality of second dies therein; performing a first sawing process to cut the first package into a plurality of second packages, wherein one of the plurality of second packages comprises three first dies and one second die; and performing a second sawing process to remove the second die of the one of the plurality of second packages, so that a cut second package is formed into a polygonal structure with the number of nodes greater than or equal to 5.Type: ApplicationFiled: November 21, 2023Publication date: March 14, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Hung Lin, Hui-Min Huang, Chang-Jung Hsueh, Wan-Yu Chiang, Ming-Da Cheng, Mirng-Ji Lii
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Publication number: 20230223354Abstract: A semiconductor device package includes a substrate having a surface, a conductive element disposed on the surface of the substrate, and an encapsulant disposed on the surface of the substrate and covering the conductive element. The conductive element has an upper surface facing away from the substrate and exposed from the encapsulant. Further, a roughness of the upper surface of the conductive element is greater than a roughness of a side surface of the conductive element.Type: ApplicationFiled: March 14, 2023Publication date: July 13, 2023Applicant: Advanced Semiconductor Engineering, Inc.Inventors: Wei Da LIN, Meng-Jen WANG, Hung Chen KUO, Wen Jin HUANG
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Patent number: 11605598Abstract: A semiconductor device package includes a substrate having a surface, a conductive element disposed on the surface of the substrate, and an encapsulant disposed on the surface of the substrate and covering the conductive element. The conductive element has an upper surface facing away from the substrate and exposed from the encapsulant. Further, a roughness of the upper surface of the conductive element is greater than a roughness of a side surface of the conductive element.Type: GrantFiled: April 17, 2020Date of Patent: March 14, 2023Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.Inventors: Wei Da Lin, Meng-Jen Wang, Hung Chen Kuo, Wen Jin Huang
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Publication number: 20230048684Abstract: A MOS capacitor includes a substrate having a capacitor forming region thereon, an ion well having a first conductivity type in the substrate, a counter doping region having a second conductivity type in the ion well within the capacitor forming region, a capacitor dielectric layer on the ion well within the capacitor forming region, a gate electrode on the capacitor dielectric layer, a source doping region having the second conductivity type on a first side of the gate electrode within the capacitor forming region, and a drain doping region having the second conductivity type on a second side of the gate electrode within the capacitor forming region.Type: ApplicationFiled: October 31, 2022Publication date: February 16, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Jian-Li Lin, Wei-Da Lin, Cheng-Guo Chen, Ta-Kang Lo, Yi-Chuan Chen, Huan-Chi Ma, Chien-Wen Yu, Kuan-Ting Lu, Kuo-Yu Liao
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Publication number: 20220181505Abstract: A MOS capacitor includes a substrate having a capacitor forming region thereon, an ion well having a first conductivity type in the substrate, a counter doping region having a second conductivity type in the ion well within the capacitor forming region, a capacitor dielectric layer on the ion well within the capacitor forming region, a gate electrode on the capacitor dielectric layer, a source doping region having the second conductivity type on a first side of the gate electrode within the capacitor forming region, and a drain doping region having the second conductivity type on a second side of the gate electrode within the capacitor forming region.Type: ApplicationFiled: January 11, 2021Publication date: June 9, 2022Inventors: Jian-Li Lin, Wei-Da Lin, Cheng-Guo Chen, Ta-Kang Lo, Yi-Chuan Chen, Huan-Chi Ma, Chien-Wen Yu, Kuan-Ting Lu, Kuo-Yu Liao
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Publication number: 20210327822Abstract: A semiconductor device package includes a substrate having a surface, a conductive element disposed on the surface of the substrate, and an encapsulant disposed on the surface of the substrate and covering the conductive element. The conductive element has an upper surface facing away from the substrate and exposed from the encapsulant. Further, a roughness of the upper surface of the conductive element is greater than a roughness of a side surface of the conductive element.Type: ApplicationFiled: April 17, 2020Publication date: October 21, 2021Applicant: Advanced Semiconductor Engineering, Inc.Inventors: Wei Da LIN, Meng-Jen WANG, Hung Chen KUO, Wen Jin HUANG