Abstract: A nanoparticle continuous-coating device based on spatial atomic layer deposition. A first-stage pipeline unit, a second-stage pipeline unit, a third-stage pipeline unit and a fourth-stage pipeline unit which are connected sequentially. The first-stage pipeline unit is used for providing a first precursor and enabling the first precursor to be adsorbed on surfaces of nanoparticles. The third-stage pipeline unit is used for providing a second precursor and enabling the second precursor to react with the first precursor on the surfaces of the nanoparticles, so that a monomolecular thin film layer is generated on the surfaces of the nanoparticles. The second-stage and fourth-stage pipeline units are used for cleaning the nanoparticles and discharging the redundant first precursor, the redundant second precursor or reaction by-products.

Abstract: A modular injector includes a precursor channel assembly and a seal assembly; the precursor channel assembly includes a plate-shaped base, a precursor channel and a gas pipeline; the precursor channel is disposed on a front surface of the plate-shaped base and extends from top to bottom, and a top end of the precursor channel is communicated with the gas pipeline; the seal assembly is disposed on the front surface of the plate-shaped base. The modular injector includes a plurality of components to form an integral module, and shunts and buffers the introduced gas through the precursor channel to achieve uniform deposition. A device includes multiple modular injectors arranged at an interval, into which the oxidant precursor source and the organo-metallic source are respectively introduced, so that multiple stages of film are deposited on the substrate after the substrate moves for a round trip.

Abstract: A nanoparticle continuous-coating device based on spatial atomic layer deposition. A first-stage pipeline unit, a second-stage pipeline unit, a third-stage pipeline unit and a fourth-stage pipeline unit which are connected sequentially. The first-stage pipeline unit is used for providing a first precursor and enabling the first precursor to be adsorbed on surfaces of nanoparticles. The third-stage pipeline unit is used for providing a second precursor and enabling the second precursor to react with the first precursor on the surfaces of the nanoparticles, so that a monomolecular thin film layer is generated on the surfaces of the nanoparticles. The second-stage and fourth-stage pipeline units are used for cleaning the nanoparticles and discharging the redundant first precursor, the redundant second precursor or reaction by-products.