Abstract: Methods for reducing contact resistance include performing a selective titanium silicide (TiSi) deposition process on a middle of the line (MOL) contact structure that includes a cavity in a substrate of dielectric material. The contact structure also includes a silicon-based connection portion at a bottom of the cavity. The selective TiSi deposition process is selective to silicon-based material over dielectric material. The methods also include performing a selective deposition process of a metal material on the MOL contact structure. The selective deposition process is selective to TiSi material over dielectric material and forms a silicide capping layer on the silicon-based connection portion. The methods further include performing a seed layer deposition process of the metal material on the contact structure.

Abstract: A threshold voltage detection method is provided by the present application. A driving current flowing through the driving transistor during a detection process can be constant by a new detection time sequence. A voltage of the drain electrode of the driving transistor is raised to a preset voltage within a detection time by iterating for multiple iterations by an iterative method, to acquire a target threshold voltage.

Abstract: A flame retardant composition includes 40-60 parts by weight of phosphonate, 5-15 parts by weight of an organosilicon flame retardant, and 2-8 parts by weight of an inorganic silicon synergist. The phosphonate is prepared by a method including: (1) condensing a compound represented by formula (I) such that some of the compounds form a polymer, giving a partially condensed product; and (2) reacting a rare earth inorganic salt with the partially condensed product to form the phosphonate.

Abstract: Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.

Abstract: The present disclosure provides a pixel driving circuit, a driving method thereof, and a display panel. A switching transistor and a sensing transistor are controlled with the same scanning line. In a detection stage, a voltage of a scanning signal line is adjusted to enable the sensing transistor to be turned on and the switching transistor to be turned off, so that a gate and a source of the driving transistor are in a floating state. A storage capacitor maintains a gate-source potential difference of the driving transistor to be stable, thereby it can accurately compensate for the mobility of the driving transistor.

Abstract: The present disclosure discloses a pixel circuit and an external compensation method thereof. The external compensation method detects real-time source potentials of a driving transistor through n iterations, a single iterative detection time that can be set artificially to limit a time for each iteration to detect a real-time source potential of the driving transistor, until the real-time source potential of the driving transistor is equal to a target source potential, thereby improving threshold voltage detection efficiency of the driving transistor.

Abstract: The present disclosure provides a pixel driving circuit, a driving method thereof, and a display panel. A switching transistor and a sensing transistor are controlled with the same scanning line. In a detection stage, a voltage of a scanning signal line is adjusted to enable the sensing transistor to be turned on and the switching transistor to be turned off, so that a gate and a source of the driving transistor are in a floating state. A storage capacitor maintains a gate-source potential difference of the driving transistor to be stable, thereby it can accurately compensate for the mobility of the driving transistor.

Abstract: Methods for reducing contact resistance include performing a selective titanium silicide (TiSi) deposition process on a middle of the line (MOL) contact structure that includes a cavity in a substrate of dielectric material. The contact structure also includes a silicon-based connection portion at a bottom of the cavity. The selective TiSi deposition process is selective to silicon-based material over dielectric material. The methods also include performing a selective deposition process of a metal material on the MOL contact structure. The selective deposition process is selective to TiSi material over dielectric material and forms a silicide capping layer on the silicon-based connection portion. The methods further include performing a seed layer deposition process of the metal material on the contact structure.

Abstract: The present disclosure discloses a pixel circuit and an external compensation method thereof. The external compensation method detects real-time source potentials of a driving transistor through n iterations, a single iterative detection time that can be set artificially to limit a time for each iteration to detect a real-time source potential of the driving transistor, until the real-time source potential of the driving transistor is equal to a target source potential, thereby improving threshold voltage detection efficiency of the driving transistor.

Abstract: A threshold voltage detection method is provided by the present application. A driving current flowing through the driving transistor during a detection process can be constant by a new detection time sequence. A voltage of the drain electrode of the driving transistor is raised to a preset voltage within a detection time by iterating for multiple iterations by an iterative method, to acquire a target threshold voltage.

Abstract: Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.

Abstract: A threshold voltage detecting method is disclosed in the present application. In the threshold voltage detecting method provided in the present application, a path between a driving transistor and a detecting circuit is shut down during detecting, so that a current flowing through the driving transistor in a detecting stage only needs to charge a storage capacitor, but does not need to charge a parasitic capacitor on the detecting circuit, thereby shortening a threshold voltage detecting time of the driving transistor, and further improving threshold voltage detecting efficiency of the driving transistor.

Abstract: A threshold voltage detecting method is disclosed in the present application. In the threshold voltage detecting method provided in the present application, a path between a driving transistor and a detecting circuit is shut down during detecting, so that a current flowing through the driving transistor in a detecting stage only needs to charge a storage capacitor, but does not need to charge a parasitic capacitor on the detecting circuit, thereby shortening a threshold voltage detecting time of the driving transistor, and further improving threshold voltage detecting efficiency of the driving transistor.

Abstract: Embodiments of methods and apparatus for reducing particle formation in physical vapor deposition (PVD) chambers are provided herein. In some embodiments, a method of reducing particle formation in a PVD chamber includes: performing a plurality of first deposition processes on a corresponding series of substrates disposed on a substrate support in the PVD chamber, wherein the PVD chamber includes a cover ring disposed about the substrate support and having a texturized outer surface, and wherein a silicon nitride (SiN) layer having a first thickness is deposited onto the texturized outer surface during each of the plurality of first deposition processes; and performing a second deposition process on the cover ring between subsets of the plurality of first deposition processes to deposit an amorphous silicon layer having a second thickness onto an underlying silicon nitride (SiN) layer.

Abstract: Embodiments of methods and apparatus for reducing particle formation in physical vapor deposition (PVD) chambers are provided herein. In some embodiments, a method of reducing particle formation in a PVD chamber includes: performing a plurality of first deposition processes on a corresponding series of substrates disposed on a substrate support in the PVD chamber, wherein the PVD chamber includes a cover ring disposed about the substrate support and having a texturized outer surface, and wherein a silicon nitride (SiN) layer having a first thickness is deposited onto the texturized outer surface during each of the plurality of first deposition processes; and performing a second deposition process on the cover ring between subsets of the plurality of first deposition processes to deposit an amorphous silicon layer having a second thickness onto an underlying silicon nitride (SiN) layer.

Abstract: A method for preparing a platelet aggregation inhibitor, a blood coagulation inhibitor, and a pharmaceutical composition or a food for preventing or treating thrombotic diseases, includes applying notoginsenoside Fc.