Patents by Inventor Wei Feing Qu

Wei Feing Qu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040192071
    Abstract: The present invention provides method of producing an annealed wafer wherein a silicon single crystal wafer produced by the Czochralski (CZ) method is subjected to a high temperature annealing in an atmosphere of an argon gas, a hydrogen gas, or a mixture gas thereof at a temperature of 1100-1350° C. for 10-600 minutes, during the annealing the silicon single crystal wafer is supported by a supporting jig only in a central side region of the wafer except for 5 mm or more from a peripheral end of the wafer, and before performing the high temperature annealing, a pre-annealing is performed at a temperature less than the temperature of the high temperature annealing to grow oxide precipitates. Thereby, there is provided a method of producing an annealed wafer wherein slip dislocations generated in a high temperature annealing can be suppressed even in the case of a silicon single crystal wafer having a large diameter of 300 mm or more, and provided the annealed wafer.
    Type: Application
    Filed: February 23, 2004
    Publication date: September 30, 2004
    Inventors: Norihiro Kobayashi, Masaro Tamatsuka, Takatoshi Nagoya, Wei Feing Qu