Abstract: In accordance with some embodiments, a package-on-package (PoP) structure includes a first semiconductor package having a first side and a second side opposing the first side, a second semiconductor package having a first side and a second side opposing the first side, and a plurality of inter-package connector coupled between the first side of the first semiconductor package and the first side of the second semiconductor package. The PoP structure further includes a first molding material on the second side of the first semiconductor package. The second side of the second semiconductor package is substantially free of the first molding material.

Abstract: A gas detection purification device is disclosed and includes a main body, a purification unit, a gas guider, a gas detection module and a controlling-driving module. The main body includes an inlet, an outlet, an external socket and a gas-flow channel disposed between the inlet and the outlet. The purification unit is disposed in the gas-flow channel for filtering gas introduced through the gas-flow channel. The gas guider is disposed in the gas channel and located at a side of the purification unit. The gas is inhaled through the inlet, flows through the purification unit and is discharged out through the outlet. The gas detection module is plugged into or detached from the external socket. The controlling driving module is disposed within the main body and electrically connected to the gas guider to control the operation of the gas guider in an enabled state and a disabled state.

Abstract: A blood pressure detection device manufactured by a semiconductor process includes a substrate, a microelectromechanical element, a gas-pressure-sensing element, a driving-chip element, an encapsulation layer and a valve layer. The substrate includes inlet apertures. The microelectromechanical element and the gas-pressure-sensing element are stacked and integrally formed on the substrate. The encapsulation layer is encapsulated and positioned on the substrate. A flowing-channel space is formed above the microelectromechanical element and the gas-pressure-sensing element. The encapsulation layer includes an outlet aperture in communication with an airbag. The driving-chip element controls the microelectromechanical element, the gas-pressure-sensing element and valve units to transport gas.

Abstract: An electronic camera assembly includes a camera chip cube bonded to camera bondpads of an interposer; at least one light-emitting diode (LED) bonded to LED bondpads of the interposer at the same height as the camera bondpads; and a housing extending from the interposer and LEDs to the height of the camera chip cube, with light guides extending from the LEDs through the housing to a top of the housing. In embodiments, the electronic camera assembly includes a cable coupled to the interposer. In typical embodiments the camera chip cube has footprint dimensions of less than three and a half millimeters square.

Abstract: An annular light trapping component includes an inner surface, an outer surface, an object-side surface and an image-side surface. The inner surface includes multiple L-shaped annular grooves. The annular light trapping component includes multiple stripe-shaped structures in the L-shaped annular grooves. The L-shaped annular grooves include an object-side L-shaped annular groove closest to the object-side surface and an image-side L-shaped annular groove closest to the image-side surface. A bottom diameter of the image-side L-shaped annular groove is larger than a bottom diameter of the object-side L-shaped annular groove. Each L-shaped annular groove includes a first side and a second side located between the object-side surface and the image-side surface. The stripe-shaped structures are disposed on the first side or the second side. A degree of inclination between the first side and the central axis is larger than a degree of inclination between the second side and the central axis.

Abstract: A semiconductor device comprises a first semiconductor structure, a second semiconductor structure located on the first semiconductor structure, and an active layer located between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure has a first conductivity type, and includes a plurality of first layers and a plurality of second layers alternately stacked. The second semiconductor structure has a second conductivity type opposite to the first conductivity type. The plurality of first layers and the plurality of second layers include indium and phosphorus, and the plurality of first layers and the plurality of second layers respectively have a first indium atomic percentage and a second indium atomic percentage. The second indium atomic percentage is different from the first indium atomic percentage.

Abstract: An electronic camera assembly includes a camera chip cube bonded to camera bondpads of an interposer; at least one light-emitting diode (LED) bonded to LED bondpads of the interposer at the same height as the camera bondpads; and a housing extending from the interposer and LEDs to the height of the camera chip cube, with light guides extending from the LEDs through the housing to a top of the housing. In embodiments, the electronic camera assembly includes a cable coupled to the interposer. In typical embodiments the camera chip cube has footprint dimensions of less than three and a half millimeters square.

Abstract: A curved-surface image-sensor assembly has a porous carrier having a concave surface with a thinned image sensor bonded by an adhesive to its concave surface of the porous carrier; the porous carrier is mounted into a water-resistant package. The sensor assembly is made by fabricating a thinned, flexible, image-sensor integrated circuit (IC) and applying adhesive to a non-illuminated side of the IC; positioning the IC over a concave surface of a porous carrier; applying vacuum through the porous carrier to suck the IC onto the concave surface of the porous carrier; and curing the adhesive to bond the IC to the concave surface of the porous carrier.

Abstract: A cavity interposer has a cavity, first bondpads adapted to couple to a chip-type camera cube disposed within a base of the cavity at a first level, the first bondpads coupled through feedthroughs to second bondpads at a base of the interposer at a second level; and third bondpads adapted to couple to a light-emitting diode (LED), the third bondpads at a third level. The third bondpads coupled to fourth bondpads at the base of the interposer at the second level; and the second and fourth bondpads couple to conductors of a cable with the first, second, and third level different. An endoscope optical includes the cavity interposer an LED, and a chip-type camera cube electrically bonded to the first bondpads; the LED is bonded to the third bondpads; and a top of the chip-type camera cube and a top of the LED are at a same level.

Abstract: A cavity interposer has a cavity, first bondpads adapted to couple to a chip-type camera cube disposed within a base of the cavity at a first level, the first bondpads coupled through feedthroughs to second bondpads at a base of the interposer at a second level; and third bondpads adapted to couple to a light-emitting diode (LED), the third bondpads at a third level. The third bondpads coupled to fourth bondpads at the base of the interposer at the second level; and the second and fourth bondpads couple to conductors of a cable with the first, second, and third level different. An endoscope optical includes the cavity interposer an LED, and a chip-type camera cube electrically bonded to the first bondpads; the LED is bonded to the third bondpads; and a top of the chip-type camera cube and a top of the LED are at a same level.

Abstract: A method of image sensor package fabrication includes forming a recess in a transparent substrate, depositing conductive traces in the recess, inserting an image sensor in the recess so that the image sensor is positioned in the recess to receive light through the transparent substrate, and inserting a circuit board in the recess so that the image sensor is positioned between the transparent substrate and the circuit board.

Abstract: An image sensor module comprises an image sensor having a light sensing area, a cover glass for covering the light sensing area, a dam between the image sensor and the cover glass, which surrounds the light sensing area, and has an outer wall and an inner wall, where a cross-section of the inner wall parallel to the surface of the light sensing area of the image sensor forms a sawtooth pattern and/or, where a cross-section of the inner wall orthogonal to the surface of the light sensing area of the image sensor forms an inclined surface.

Abstract: A surface-mount device platform includes a surface-mounting region, a connection region, and a bendable region therebetween, each including a respective part of a base substrate. The base substrate includes electrically-conductive layers interspersed with electrically-insulating build-up layers. Each of the surface-mounting region, the connection region, and the bendable region spans between a bottom substrate-surface and a top substrate-surface of the base substrate. The surface-mounting region further includes an electrically-insulating first top rigid-layer, and device bond-pads exposed on a top surface of the first top rigid-layer facing away from the top substrate-surface in the surface-mounting region.

Abstract: A chip comprises a semiconductor substrate having a first side and a second side opposite to the first side, a plurality of conductive metal patterns formed on the first side of the semiconductor substrate, a plurality of solder balls formed on the first side of the semiconductor substrate, and at least one code pattern formed using laser marking on the first side of the semiconductor substrate in a space free from the plurality of conductive metal patterns and the plurality of solder balls, wherein the at least one code pattern is visible from a backside of the chip, the at least one code pattern represents a binary number having four bits; and the binary number represents a decimal number to represent a tracing number of the chip.

Abstract: An active-pixel device assembly with stray-light reduction includes an active-pixel device including a semiconductor substrate and an array of active pixels, a light-transmissive substrate disposed on a light-receiving side of the active-pixel device, and a rough opaque coating disposed on a first surface of the light-transmissive substrate and forming an aperture aligned with the array of active pixels, wherein the rough opaque coating is rough so as to suppress reflection of light incident thereon from at least one side. A method for manufacturing a stray-light-reducing coating for an active-pixel device assembly includes depositing an opaque coating on a light-transmissive substrate such that the opaque coating forms a light-transmissive aperture, and roughening the opaque coating to form a rough opaque coating, said roughening including treating the opaque coating with an alkaline solution.

Abstract: An image sensor module comprises an image sensor having a light sensing area, a cover glass for covering the light sensing area, a dam between the image sensor and the cover glass, which surrounds the light sensing area, and has an outer wall and an inner wall, where a cross-section of the inner wall parallel to the surface of the light sensing area of the image sensor forms a sawtooth pattern and/or, where a cross-section of the inner wall orthogonal to the surface of the light sensing area of the image sensor forms an inclined surface.

Abstract: A semiconductor structure is provided. The semiconductor structure includes: a substrate having a cavity recessed from a top surface of the substrate toward a bottom surface of the substrate opposite to the top surface, wherein the cavity has a sidewall and a bottom surface, and the bottom surface of the cavity is substantially parallel to the top surface of the substrate; a light source structure in the cavity, and the light source structure emitting a light from a sidewall of the light source structure; and a diffractive optical element (DOE) over the top surface of the substrate; wherein the sidewall of the cavity is a sloped surface, so that when the light is incident on the sidewall, the sloped surface reflects the incident light to generate a reflected light toward the DOE. Associated semiconductor structure and manufacturing method are also disclosed.

Abstract: A diffractive optical element (DOE) comprises a first part comprising a first transparent non-conductive base and a first transparent conductive layer disposed on the first transparent non-conductive base and a second part comprising a second transparent non-conductive base and a second transparent conductive layer disposed on the second transparent non-conductive base. The first transparent conductive layer and the second transparent conductive layer have periodical patterns of thickness for diffracting light. Spacers separate the first part and the second part. The first part and the second part are positioned such that the first transparent conductive layer is facing the second transparent conductive layer. A first end of the first transparent conductive layer is electrically connected to a first terminal of a capacitance monitor, and a second end of the second transparent conductive layer is electrically connected to a second terminal of the capacitance monitor.

Abstract: A method of image sensor package fabrication includes forming a recess in a transparent substrate, depositing conductive traces in the recess, inserting an image sensor in the recess so that the image sensor is positioned in the recess to receive light through the transparent substrate, and inserting a circuit board in the recess so that the image sensor is positioned between the transparent substrate and the circuit board.

Abstract: An image sensor package includes a transparent substrate with a recess formed in the transparent substrate, and an image sensor positioned in the recess so that light incident on the transparent substrate passes through the transparent substrate to the image sensor. The image sensor package also includes a circuit board electrically disposed in the recess and coupled to receive image data from the image sensor, and the image sensor is positioned in the recess between the circuit board and the transparent substrate.