Abstract: Disclosed is an occluding stent. The occluding stent includes a distal flange occluding body, a proximal flange occluding body, and a connection portion. External surfaces of the distal flange occluding body and the proximal flange occluding body are both provided with a coating. An external surface of the connection portion is wholly or partially provided with a coating. A first occluding coating is provided between the distal flange occluding body and an inner cavity of the connection portion. The present invention overcomes the defect that the existing occluder device for closure of an esophagobronchial fistula is harmful to surrounding tissues, makes the device retractable, enhances the safety of the device, and improves life and treatment of patients. A new safe and effective treatment method for an esophagobronchial fistula is provided.

Abstract: The present disclosure provides an image generation method and apparatus, a computer-readable medium, and an electronic device. The method includes: displaying an image editing interface, a first merchandise image corresponding to a target merchandise is displayed in the image editing interface; determining a target scene to be added to the first merchandise image; and displaying a second merchandise image that is randomly generated by the first merchandise image and the target scene.

Abstract: Embodiments of the disclosure include a method of forming a gate-all-around (GAA) contact structure on a semiconductor substrate. The method will include removing material from surfaces of a feature formed in a surface of a substrate that includes a plurality of features that each include a plurality of source/drain contact surfaces, selectively forming a reaction product material over a surface of each of the plurality of source/drain contact surfaces, heating the substrate to a first temperature to remove the reaction product material from the surface of each of the plurality of contacts, selectively forming a first metal layer on the surface of each of the plurality of contacts, selectively forming a second metal layer on the first metal layer, and filling the feature with a conductor material, wherein the conductor material comprises tungsten (W) or molybdenum (Mo).

Abstract: Embodiments include a method of forming a contact structure on a semiconductor substrate. The method including selectively depositing a metal silicide layer over a contact formed within a cavity of a substrate and a bottom surface of the cavity using a selective deposition process, including forming a residual layer on a surface of a dielectric layer forming sidewalls of the cavity, wherein a thickness of the metal silicide layer deposited over the contact is greater than a thickness of the residual layer, removing at least a portion of the residual layer formed on the dielectric layer using an etching process that comprises exposing the metal selectively deposited layer to a metal halide containing precursor, and selectively depositing a metal fill over the metal silicide layer remaining over the contact after removing the at least the portion of the residual layer using a selective metal fill process.

Abstract: Embodiments include a method of forming a contact structure on a semiconductor substrate. The method including selectively depositing a metal silicide layer over a contact formed within a cavity of a substrate and a bottom surface of the cavity using a selective deposition process, including forming a residual layer on a surface of a dielectric layer forming sidewalls of the cavity, wherein a thickness of the metal silicide layer deposited over the contact is greater than a thickness of the residual layer, removing at least a portion of the residual layer formed on the dielectric layer using an etching process that comprises exposing the metal selectively deposited layer to a metal halide containing precursor, and selectively depositing a metal fill over the metal silicide layer remaining over the contact after removing the at least the portion of the residual layer using a selective metal fill process.

Abstract: A manufacturing method for a P-type laterally diffused metal oxide semiconductor device includes: forming a N-type buried layer in a substrate, forming a P-type region located on the N-type buried layer, and forming a mask layer located on the P-type region; patterning the mask layer to form at least two injection windows; performing N-type ion implantation by the at least two injection windows; forming an oxide layer; removing the mask layer; performing P-type ion implantation on the P-type region to form a P-type doped region; diffusing the P-type doped region to form a drift region and two P-type well regions, diffusing the high-voltage N-well doped region to form a high-voltage N-type well region, and diffusing the low-voltage N-well doped region to form a low-voltage N-type well region; and forming a source doped region, a drain doped region, and a gate.

Abstract: A heterojunction semiconductor device with a low on-resistance includes a metal drain electrode, a substrate, and a buffer layer. A current blocking layer is arranged in the buffer layer, a gate structure is arranged on the buffer layer, and the gate structure comprises a metal gate electrode, GaN pillars and AlGaN layers, wherein a metal source electrode is arranged above the metal gate electrode; and the current blocking layer comprises multiple levels of current blocking layers, the centers of symmetry of the layers are collinear, and annular inner openings of the current blocking layers at all levels gradually become smaller from top to bottom. The AlGaN layers and the GaN pillars are distributed in a honeycomb above the buffer layer.

Abstract: The present application discloses a preparation method of SM non-woven fabrics for roof anti-slip, which belongs to the technical field of roofing materials, comprising preparing spunbond non-woven fabric raw materials, preparing spunbond non-woven fabrics, preparing meltblown non-woven fabric raw materials, preparing primary SM non-woven fabrics, and post-processing; the spunbond non-woven fabric raw materials are prepared by uniformly mixing polypropylene with a low melt flow index, polypropylene with a high melt flow index, sodium alginate, antioxidant 1010, zinc stearate, ultraviolet absorber UV-531, polyvinyl alcohol, reinforcing agent, adhesive agent, and nano titanium dioxide. The present application can avoid the problem that the SM non-woven fabrics cannot be fully bonded together and are easy to delaminate when being combined, can also solve the problem of fabric breakage during high-speed production, and can also improve the wear resistance, strength, and stiffness of SM non-woven fabrics.

Abstract: The present disclosure relates to a processing in memory (PIM) enabled device for executing a neural network model. The PIM enabled device comprises a memory block assembly comprising a first array of memory blocks, a second array of memory blocks adjacent to the first array of memory blocks, a plurality of first data links associated with the first array of memory blocks and the second array of memory blocks, wherein each data link of the plurality of first data links communicatively couples two corresponding memory blocks of which are from the first array of memory blocks and the second array of memory blocks respectively, and a second data link communicatively coupled to the plurality of first data links. The data from a first memory block of the first array of memory blocks can be transferable to a second memory block of the second array of memory blocks via the plurality of first data links and the second data link.

Abstract: Disclosed are a power device and a photovoltaic power generation device. The power device comprises a case, a first power board, and a second power board, the first power board is arranged in the case, and a first boosting module and an inverter module are arranged on the first power board; the second power board is arranged in the case, the second power board is electrically connected to the first power board, and a second boosting module is arranged on the second power board. According to the technical solution of the present invention, the rated power generation power of the photovoltaic power generation device can be increased, and the flexibility for clients is improved.

Abstract: Aspects of the invention include converting an artificial intelligence (AI) model generated in a first framework to a uniform exchange formatted model by engaging a master table to retrieve instructions for converting from the AI model to the uniform exchange formatted model in accordance with the first framework. The uniform exchange formatted model in compiled by engaging the master table to retrieve instructions for compiling the uniform exchange formatted model in accordance with the first framework. Data is received as an input to the compiled uniform exchange formatted model and an output is generated by engaging the master table to retrieve instructions for generating the output in accordance with the first framework.

Abstract: A computing system includes an automatic optical inspection (AOI) and a database that stores images of a plurality of visual inspection (VI) training boards. Each of the visual inspection (VI) training boards includes at least one intended defect. The AOI system includes an artificial intelligence (AI) algorithm implemented in an automatic optical inspection (AOI) system. The AOI system trains the AI algorithm to learn at least one target defect based on the at least one intended defect including in the plurality of VI training boards, analyzes a production printed circuit board (PCB), and determines either a non-defective PCB in response to the AI algorithm determining the production PCB excludes the at least one target defect, or a defective PCB in response to the AI algorithm determining the production PCB includes at least one target defect.

Abstract: Methods and devices, the method including receiving a matrix of a neural network model; classifying at least a portion of the matrix as a first section based on a first distribution pattern of non-zero elements of the portion of the matrix; and identifying memory addresses of the non-zero elements in the first section of the matrix for loading, according to a first order determined based on the first distribution pattern, the non-zero elements in the first section into one or more vector registers.

Abstract: Disclosed is an occluding stent. The occluding stent includes a distal flange occluding body, a proximal flange occluding body, and a connection portion. External surfaces of the distal flange occluding body and the proximal flange occluding body are both provided with a coating. An external surface of the connection portion is wholly or partially provided with a coating. A first occluding coating is provided between the distal flange occluding body and an inner cavity of the connection portion. The present application overcomes the defect that the existing occluder device for closure of an esophagobronchial fistula is harmful to surrounding tissues, makes the device retractable, enhances the safety of the device, and improves life and treatment of patients. A new safe and effective treatment method for an esophagobronchial fistula is provided.

Abstract: Methods and apparatus for reducing a size of a neural network model, the method including: compressing data of the neural network model; identifying structure information of a vector register, wherein the structure information includes a number of registers included in the vector register; comparing a number of elements in the compressed data with a first condition, wherein the first condition is determined based on the number of registers in the vector register; and in response to the number of elements satisfying the first condition, associating the compressed data with the vector register to enable loading the compressed data to the vector register.

Abstract: Methods and devices, the method including receiving a matrix of a neural network model; classifying at least a portion of the matrix as a first section based on a first distribution pattern of non-zero elements of the portion of the matrix; and identifying memory addresses of the non-zero elements in the first section of the matrix for loading, according to a first order determined based on the first distribution pattern, the non-zero elements in the first section into one or more vector registers.

Abstract: Methods and apparatus for reducing a size of a neural network model, the method including: compressing data of the neural network model; identifying structure information of a vector register, wherein the structure information includes a number of registers included in the vector register; comparing a number of elements in the compressed data with a first condition, wherein the first condition is determined based on the number of registers in the vector register; and in response to the number of elements satisfying the first condition, associating the compressed data with the vector register to enable loading the compressed data to the vector register.

Abstract: A heat dissipation assembly and an electric energy conversion apparatus are disclosed according to the present application. The heat dissipation assembly comprises a side cover connected to the electric energy conversion apparatus and an air outlet cover, a heat dissipation passage is formed by enclosure of the side cover and one side surface of the electric energy conversion apparatus, the side cover is provided with an air inlet in communication with the heat dissipation passage; the air outlet cover is arranged at the top of the electric energy conversion apparatus and partially connected with the side cover, and an air outlet space is formed by enclosure of the air outlet cover, the air outlet space is in communication with the heat dissipation passage, the air outlet cover is provided with an air outlet at an outer peripheral side of the air outlet cover away from the electric energy conversion apparatus.

Abstract: Provided is a red mud-based composite calcium ferrite and a preparation method and use thereof. The preparation method of the red mud-based composite calcium ferrite includes the following steps: mixing red mud and a calcium source, and roasting an obtained mixture in an oxygen-containing atmosphere to obtain the red mud-based composite calcium ferrite; where the calcium source is selected from the group consisting of lime and calcium carbonate. In the present disclosure, the composite calcium ferrite is prepared using a solid waste red mud, with a greatly reduced cost of raw materials; on the other hand, compared with traditional calcium ferrite, the composite calcium ferrite mainly has phase structures of CaFe2O4, Ca2FeAlO5, and Ca2Fe2O5. Therefore, the composite calcium ferrite has a lower melting point, a higher lime dissolution efficiency, and better fluxing and dephosphorization effects during primary smelting and refining of molten steel, and has broad prospects for use in industry.

Abstract: A pressing device includes a screw body. The screw body includes a screw head that comprises a driver interface. The screw body also includes a screw shaft that comprises a screw tip opposite the screw head with respect to the screw shaft, exterior spiral threads between the screw head and screw tip, and an interior cavity with an opening at the screw tip. The pressing device also includes a pin partially inserted into the interior cavity. The pin comprises a first pin end inserted into the interior cavity, a pin shaft that is connected to the first pin end, and a second pin end that is connected to the pin shaft and that is exterior to the interior cavity. Applying a force to the second pin end in a direction towards the screw head causes the pin shaft to advance into to interior cavity.