Patents by Inventor Wei-Fu Wu
Wei-Fu Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11984442Abstract: A layout includes a first and a second standard cells abutting along a boundary line. The first cell includes first fins. An edge of the first fins closest to and away from the boundary line by a distance D1. A first gate line over-crossing the first fins protrudes from the edge by a length L1. The second cell includes second fins. An edge of the second fins closest to and away from the boundary line by a distance D2. A second gate line over-crossing the second fins protrudes from the edge by a length L2. Two first dummy gate lines at two sides of the first fins and two second dummy lines at two sides of the second fins are respectively away from the boundary line by a distance S. The lengths L1 and L2, the distances S, D1 and D2 have the relationships: L1?D1?S, L2?D2?S, and D1?D2.Type: GrantFiled: April 8, 2022Date of Patent: May 14, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Ruei-Yau Chen, Wei-Jen Wang, Kun-Yuan Wu, Chien-Fu Chen, Chen-Hsien Hsu
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Patent number: 11978740Abstract: A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.Type: GrantFiled: February 17, 2022Date of Patent: May 7, 2024Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Harry-Hak-Lay Chuang, Kuo-Ching Huang, Wei-Cheng Wu, Hsin Fu Lin, Henry Wang, Chien Hung Liu, Tsung-Hao Yeh, Hsien Jung Chen
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Patent number: 11971482Abstract: A system for providing six-dimensional position data of an object in a three-dimensional (3D) space, the system including a light source configured to emit a light beam in an x-direction, a mirror including a mirror plane disposed in an x-y plane and a beam splitter configured for reflecting the light beam from the light source onto the mirror before being directed to the object, the light beam reflected by the object onto the beam splitter before being directed through a lens to an image plane to form an image.Type: GrantFiled: August 18, 2023Date of Patent: April 30, 2024Assignee: MLOptic Corp.Inventors: Sophia Shiaoyi Wu, Gary Fu, Sean Huentelman, Wei Zhou
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Patent number: 11967563Abstract: A Fan-Out package having a main die and a dummy die side-by-side is provided. A molding material is formed along sidewalls of the main die and the dummy die, and a redistribution layer having a plurality of vias and conductive lines is positioned over the main die and the dummy die, where the plurality of vias and the conductive lines are electrically connected to connectors of the main die.Type: GrantFiled: August 16, 2021Date of Patent: April 23, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yan-Fu Lin, Chen-Hua Yu, Meng-Tsan Lee, Wei-Cheng Wu, Hsien-Wei Chen
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Publication number: 20240113173Abstract: In one example aspect, the present disclosure is directed to a device. The device includes an active region on a semiconductor substrate. The active region extends along a first direction. The device also includes a gate structure on the active region. The gate structure extends along a second direction that is perpendicular to the first direction. Moreover, the gate structure engages with a channel on the active region. The device further includes a source/drain feature on the active region and connected to the channel. A projection of the source/drain feature onto the semiconductor substrate resembles a hexagon.Type: ApplicationFiled: November 27, 2023Publication date: April 4, 2024Inventors: Wei Ju Lee, Chun-Fu Cheng, Chung-Wei Wu, Zhiqiang Wu
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Patent number: 11929409Abstract: Semiconductor device includes a substrate having multiple fins formed from a substrate, a first source/drain feature comprising a first epitaxial layer in contact with a first fin, a second epitaxial layer formed on the first epitaxial layer, and a third epitaxial layer formed on the second epitaxial layer, the third epitaxial layer comprising a center portion and an edge portion that is at a different height than the center portion; a fourth epitaxial layer formed on the third epitaxial layer, a second source/drain feature adjacent the first source/drain feature, comprising a first epitaxial layer in contact with a second fin, a second epitaxial layer formed on the first epitaxial layer of the second source/drain feature, a third epitaxial layer formed on the second epitaxial layer of the second source/drain feature, the third epitaxial layer comprising a center portion and an edge portion that is at a different height than the center portion of the third epitaxial layer of the second source/drain feature; aType: GrantFiled: October 14, 2022Date of Patent: March 12, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wei Ju Lee, Chun-Fu Cheng, Chung-Wei Wu, Zhiqiang Wu
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Publication number: 20240072115Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.Type: ApplicationFiled: February 13, 2023Publication date: February 29, 2024Inventors: Wei-Xiang You, Wei-De Ho, Hsin Yang Hung, Meng-Yu Lin, Hsiang-Hung Huang, Chun-Fu Cheng, Kuan-Kan Hu, Szu-Hua Chen, Ting-Yun Wu, Wei-Cheng Tzeng, Wei-Cheng Lin, Cheng-Yin Wang, Jui-Chien Huang, Szuya Liao
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Publication number: 20230050951Abstract: A display device includes a pixel array substrate and a circuit board. The pixel array substrate has a first surface, a second surface opposite to the first surface, and a first side surface connecting the first surface and the second surface. Multiple bonding pads are located on the first surface. The circuit board is bent from above the first surface of the pixel array substrate to below the second surface. The circuit board is electrically connected to the bonding pads and includes a thermoplastic substrate. The thermoplastic substrate includes a third surface facing the pixel array substrate and a fourth surface opposite to the third surface. The thermoplastic substrate includes a first bend formed by thermoplastics.Type: ApplicationFiled: November 1, 2021Publication date: February 16, 2023Applicant: Au Optronics CorporationInventors: Wei-Fu Wu, Yu Tseng, Yu-Ting Liu, Chih-Cheng Kao, Tsai-Chi Yeh
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Patent number: 9225272Abstract: The present invention provides a control circuit for speed and rotational direction of a fan, including a signal conversion unit, a processing unit, and a drive unit. The signal conversion unit converts the received input signal into a DC level signal. The processing unit determines to generate a plurality of control signals for the fan based on the received DC level signal and at least one preset voltage therein to drive the drive unit, further controlling the rotational speed or clockwise/counter-clockwise rotation of the fan, whereby to reduce the cost and increase the layout space.Type: GrantFiled: March 4, 2013Date of Patent: December 29, 2015Assignee: ASIA VITAL COMPONENTS CO., LTD.Inventors: Wei-Fu Wu, Wei-Tsai Huang
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Publication number: 20140246996Abstract: The present invention provides a control circuit for speed and rotational direction of a fan, including a signal conversion unit, a processing unit, and a drive unit. The signal conversion unit converts the received input signal into a DC level signal. The processing unit determines to generate a plurality of control signals for the fan based on the received DC level signal and at least one preset voltage therein to drive the drive unit, further controlling the rotational speed or clockwise/counter-clockwise rotation of the fan, whereby to reduce the cost and increase the layout space.Type: ApplicationFiled: March 4, 2013Publication date: September 4, 2014Applicant: ASIA VITAL COMPONENTS CO., LTD.Inventors: Wei-Fu Wu, Wei-Tsai Huang