Abstract: A heating circuit is provided. The heating circuit is disposed in a chip which has a normal operation temperature range. The heating circuit includes a comparison circuit and a thermal-energy generation circuit. The comparison circuit compares a temperature voltage with a first threshold voltage. The temperature voltage represents a temperature of the chip. The thermal-energy generation circuit is controlled by the comparison circuit. When the temperature voltage is less than the first threshold voltage, the comparison circuit enables the thermal-energy generation circuit to generate thermal energy to raise the temperature of the chip.

Abstract: Semiconductor device structures having gate structures with tunable threshold voltages are provided. Various geometries of device structure can be varied to tune the threshold voltages. In some examples, distances from tops of fins to tops of gate structures can be varied to tune threshold voltages. In some examples, distances from outermost sidewalls of gate structures to respective nearest sidewalls of nearest fins to the respective outermost sidewalls (which respective gate structure overlies the nearest fin) can be varied to tune threshold voltages.

Abstract: A heating circuit is provided. The heating circuit is disposed in a chip which has a normal operation temperature range. The heating circuit includes a comparison circuit and a thermal-energy generation circuit. The comparison circuit compares a temperature voltage with a first threshold voltage. The temperature voltage represents a temperature of the chip. The thermal-energy generation circuit is controlled by the comparison circuit. When the temperature voltage is less than the first threshold voltage, the comparison circuit enables the thermal-energy generation circuit to generate thermal energy to raise the temperature of the chip.