Patents by Inventor Wei-Hao Lee
Wei-Hao Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240142864Abstract: A projection device includes a casing, a light source module, a light valve module, a projection lens, a heat dissipation module, and a fan disposed in the casing. The casing has at least one air inlet, a first air outlet, and a second air outlet. The heat dissipation module is coupled to the light source module and the light valve module and configured to cool the light source module and the light valve module. The fan has a first air exhaust and a second air exhaust. The first air exhaust and the second air exhaust are respectively disposed at positions adjacent to the first air outlet and the second air outlet of the casing.Type: ApplicationFiled: October 17, 2023Publication date: May 2, 2024Applicant: Coretronic CorporationInventors: Wen-Jui Huang, Wei-Yi Lee, Wen-Hao Chu
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Publication number: 20240139301Abstract: The disclosure provides a method of active immunotherapy for a cancer patient, comprising administering vaccines against Globo series antigens (i.e., Globo H, SSEA-3 and SSEA-4). Specifically, the method comprises administering Globo H-CRM197 (OBI-833/821) in patients with cancer. The disclosure also provides a method of selecting a cancer patient who is suitable as treatment candidate for immunotherapy. Exemplary immune response can be characterized by reduction of the severity of disease, including but not limited to, prevention of disease, delay in onset of disease, decreased severity of symptoms, decreased morbidity and delayed mortality.Type: ApplicationFiled: November 19, 2021Publication date: May 2, 2024Inventors: Ming-Tain LAI, Cheng-Der Tony YU, I-Ju CHEN, Wei-Han LEE, Chueh-Hao YANG, Chun-Yen TSAO, Chang-Lin HSIEH, Chien-Chih OU, Chen-En TSAI
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Publication number: 20240142865Abstract: A projection device includes a casing, a projection lens, a light valve module, a light source module, a first heat dissipation module, a second heat dissipation module, a fan, and a guiding member. The first heat dissipation module is disposed corresponding to a first air inlet of a first side cover and connected to the light valve module, and the second heat dissipation module is disposed corresponding to a second air inlet of a second side cover and connected to the light source module. An airflow in an accommodating space of the casing is guided to the guiding member by the fan, and is transferred from the guiding member to an air outlet to flow out of the casing. A direction of an image beam of the projection lens is different from an airflow direction flowing out from the air outlet of a third side cover.Type: ApplicationFiled: October 27, 2023Publication date: May 2, 2024Applicant: Coretronic CorporationInventors: Wei-Yi Lee, Wen-Hao Chu
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Patent number: 11972975Abstract: A method of forming a semiconductor device structure is provided. The method includes forming a masking structure with first openings over a semiconductor substrate and correspondingly forming metal layers in the first openings. The method also includes recessing the masking structure to form second openings between the metal layers and forming a sacrificial layer surrounded by a first liner in each of the second openings. In addition, after forming a second liner over the sacrificial layer in each of the second openings, the method includes removing the sacrificial layer in each of the second openings to form a plurality of air gaps therefrom.Type: GrantFiled: June 24, 2021Date of Patent: April 30, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsi-Wen Tien, Wei-Hao Liao, Yu-Teng Dai, Hsin-Chieh Yao, Chih-Wei Lu, Chung-Ju Lee, Shau-Lin Shue
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Publication number: 20240130714Abstract: Disclosed are computer-implemented or computer-aided method for diagnosing or predicting the risk of obstructive sleep apnea in a subject. The methods comprise determining whether the subject has obstructive sleep apnea based on at least one quantitative ultrasound parameter and/or at least one morphometric parameter.Type: ApplicationFiled: May 16, 2023Publication date: April 25, 2024Applicant: AMCAD BIOMED CORPORATIONInventors: Argon CHEN, Yi-li LEE, Pei-Yu CHAO, Wei-Hao CHEN, Wei-Yu HSU
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Publication number: 20240132496Abstract: An ionic compound, an absorbent and an absorption device are provided. The ionic compound has a structure represented by Formula (I): ABn, ??Formula (I) wherein A is B is R1, R2, R3, R4, R5, and R6 are independently H, C1-6 alkyl group; and n is 1 or 2.Type: ApplicationFiled: June 9, 2023Publication date: April 25, 2024Applicant: Industrial Technology Research InstituteInventors: Wei-Chih LEE, Yi-Hsiang CHEN, Chih-Hao CHEN, Ai-Yu LIOU, Jyi-Ching PERNG, Jiun-Jen CHEN
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Patent number: 11966107Abstract: An anti-peep display device includes a display module and an anti-peep module disposed on the display module. The anti-peep module includes the following features. The first light incident surface faces the display surface, the second and third light incident surfaces are located on opposite sides of the first light incident surface, the first condensing portion is disposed corresponding to the second light incident surface and the first light source, the second condensing portion is disposed corresponding to the third light incident surface and the second light source, the first and second condensing portions convert beams of the first and second light sources into anti-peep beams with a beam angle less than 10 degrees, and the optical microstructures reflect the anti-peep beams and exit the anti-peep beams from the light guide plate. The present invention also provides an anti-peep method applicable to the anti-peep display device.Type: GrantFiled: June 14, 2023Date of Patent: April 23, 2024Assignee: CHAMP VISION DISPLAY INC.Inventors: Chung-Hao Wu, Hsin-Hung Lee, Chin-Ku Liu, Chun-Chien Liao, Wei-Jhe Chien
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Publication number: 20240120200Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method of forming a semiconductor device comprises receiving a structure including a substrate and a first hard mask over the substrate, the first hard mask having at least two separate portions; forming spacers along sidewalls of the at least two portions of the first hard mask with a space between the spacers; forming a second hard mask in the space; forming a first cut in the at least two portions of the first hard mask; forming a second cut in the second hard mask; and depositing a cut hard mask in the first cut and the second cut.Type: ApplicationFiled: December 18, 2023Publication date: April 11, 2024Inventors: Hsi-Wen Tien, Wei-Hao Liao, Pin-Ren Dai, Chih Wei Lu, Chung-Ju Lee
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Patent number: 11956919Abstract: A cold plate is provided and includes: a housing disposed with a chamber; a base combined with the housing to form a working space separated from the chamber but connected with the chamber through an interconnecting structure to allow a working medium to flow within the chamber and the working space; a heat transfer structure disposed on the inner side of the base; and a pump disposed within the working space to drive the working medium in the working space. As such, the cold plate can provide better heat dissipation performance.Type: GrantFiled: December 23, 2020Date of Patent: April 9, 2024Assignee: AURAS TECHNOLOGY CO., LTD.Inventors: Chien-An Chen, Chien-Yu Chen, Tian-Li Ye, Jen-Hao Lin, Wei-Shen Lee
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Publication number: 20240094626Abstract: A pellicle for an extreme ultraviolet (EUV) photomask includes a pellicle frame and a main membrane attached to the pellicle frame. The main membrane includes a plurality of nanotubes, and each of the plurality of nanotubes is covered by a coating layer containing Si and one or more metal elements.Type: ApplicationFiled: April 12, 2023Publication date: March 21, 2024Inventors: Pei-Cheng HSU, Wei-Hao LEE, Huan-Ling LEE, Hsin-Chang LEE, Chin-Hsiang LIN
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Publication number: 20240096917Abstract: An image sensor structure includes a semiconductor substrate, a plurality of image sensing elements, a reflective element, and a high-k dielectric structure. The image sensing elements are in the semiconductor substrate. The reflective element is in the semiconductor substrate and between the image sensing elements. The high-k dielectric structure is between the reflective element and the image sensing elements.Type: ApplicationFiled: January 6, 2023Publication date: March 21, 2024Inventors: PO CHUN CHANG, PING-HAO LIN, WEI-LIN CHEN, KUN-HUI LIN, KUO-CHENG LEE
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Patent number: 11923409Abstract: A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers over the semiconductor substrate and connected to the source/drain feature, a gate portion between vertically adjacent channel layers, and an inner spacer between the source/drain feature and the gate portion and between adjacent channel layers. The semiconductor device further includes an air gap between the inner spacer and the source/drain feature.Type: GrantFiled: August 5, 2021Date of Patent: March 5, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Po-Yu Lin, Wei-Yang Lee, Chia-Pin Lin, Tzu-Hua Chiu, Kuan-Hao Cheng, Wei-Han Fan, Li-Li Su, Wei-Min Liu
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Patent number: 11915746Abstract: A memory device includes a plurality of memory cells; a word line, connected to one of the plurality of memory cells, that is configured to provide a first WL pulse having a rising edge and a falling edge that define a pulse width of the first WL pulse; a first tracking WL, formed adjacent to the memory cells, that is configured to provide, via being physically or operatively coupled to a bit line (BL) configured to write a logic state to the memory cell, a second WL pulse having a rising edge with a decreased slope; and a first tracking BL, configured to emulate the BL, that is coupled to the first tracking WL such that the pulse width of the first WL pulse is increased based on the decreased slope of the rising edge of the second WL pulse.Type: GrantFiled: May 12, 2022Date of Patent: February 27, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wei-jer Hsieh, Yu-Hao Hsu, Zhi-Hao Chang, Cheng Hung Lee
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Patent number: 11915943Abstract: A semiconductor structure includes a conductive feature disposed over a semiconductor substrate, a via disposed in a first interlayer dielectric (ILD) layer over the conductive feature, and a metal-containing etch-stop layer (ESL) disposed on the via, where the metal-containing ESL includes a first metal and is resistant to etching by a fluorine-containing etchant. The semiconductor structure further includes a conductive line disposed over the metal-containing ESL, where the conductive line includes a second metal different from the first metal and is etchable by the fluorine-containing etchant, and where the via is configured to interconnect the conductive line to the conductive feature. Furthermore, the semiconductor structure includes a second ILD layer disposed over the first ILD layer.Type: GrantFiled: October 25, 2021Date of Patent: February 27, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wei-Hao Liao, Hsi-Wen Tien, Chih Wei Lu, Pin-Ren Dai, Chung-Ju Lee
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Publication number: 20240045318Abstract: An extreme ultraviolet (EUV) mask includes a substrate, a reflective multilayer stack on the substrate, a diffusion barrier layer, a capping layer and a patterned absorber layer. The reflective multilayer stack comprises alternately stacked first layers and second layers. The diffusion barrier layer is on the reflective multilayer stack. The diffusion barrier layer has a composition different from compositions of the first layers and the second layers. The capping layer is on the diffusion barrier layer. The patterned absorber layer is on the reflective multilayer stack.Type: ApplicationFiled: August 3, 2022Publication date: February 8, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsin-Chang LEE, Pei-Cheng HSU, Wei-Hao LEE, Bo-Wei SHIH, Ta-Cheng LIEN
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Publication number: 20240036459Abstract: In a method of manufacturing a pellicle for an extreme ultraviolet (EUV) photomask, a membrane of Sp2 carbon is formed, a treatment is performed on the membrane to change a surface property of the membrane, and after the treatment, a cover layer is formed over the membrane.Type: ApplicationFiled: March 23, 2023Publication date: February 1, 2024Inventors: Wei-Hao LEE, Pei-Cheng HSU, Chia-Tung KUO, Hsin-Chang LEE
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Publication number: 20240004284Abstract: A pellicle assembly includes a pellicle membrane with a nanotube layer formed from thick nanotube bundles. The pellicle membrane can be formed with multiple layers and has a combination of long lifetime, high transmittance, low deflection, and small pore size. A conformal coating may applied to an outer surface of the pellicle membrane. The conformal coating protects the pellicle membrane from damage that can occur due to heat and hydrogen plasma created during EUV exposure.Type: ApplicationFiled: June 30, 2022Publication date: January 4, 2024Inventors: Pei-Cheng Hsu, Wei-Hao Lee, Ting-Pi Sun, Chia-Tung Kuo, Huan-Ling Lee, Hsin-Chang Lee, Chin-Hsiang Lin
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Publication number: 20230408904Abstract: A method of forming a pellicle includes forming a protective film surrounding a membrane to form a pellicle membrane using a plasma enhanced atomic layer deposition (PEALD) process, in which the membrane includes a network of carbon nanotubes, the PEALD process is performed by a plurality of cycles, and each of the cycles includes igniting a plasma in a deposition chamber, after igniting the plasma, introducing a silicon-based precursor into the deposition chamber, purging the silicon-based precursor, introducing a reactant gas into the deposition chamber, and purging the reactant gas, placing the pellicle membrane on a filter membrane, transferring the pellicle membrane from the filter membrane to a pellicle border, attaching the pellicle border to a pellicle frame, and mounting the pellicle frame onto a photomask comprising a pattern region.Type: ApplicationFiled: June 17, 2022Publication date: December 21, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wei-Hao LEE, Pei-Cheng HSU, Huan-Ling LEE, Hsin-Chang LEE
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Publication number: 20230161241Abstract: An extreme ultraviolet (EUV) mask, includes a substrate, a reflective multilayer stack on the substrate, and a single layer or multi-layer capping feature on the reflective multilayer stack. The capping feature includes a capping layer or capping layers including a material having an amorphous structure. Other described embodiments include capping layer(s) that contain element(s) having a first solid carbon solubility less than about 3. In multilayer capping feature embodiments, element(s) of the respective capping layers have different solid carbon solubility properties.Type: ApplicationFiled: May 19, 2022Publication date: May 25, 2023Inventors: Hsin-Chang LEE, Pei-Cheng HSU, Wei-Hao LEE, Ping-Hsun LIN, Ta-Cheng LIEN, Ching-Fang YU
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Publication number: 20230161261Abstract: Coated nanotubes and bundles of nanotubes are formed into membranes useful in optical assemblies in EUV photolithography systems. These optical assemblies are useful in methods for patterning materials on a semiconductor substrate. Such methods involve generating, in a UV lithography system, UV radiation. The UV radiation is passed through a coating layer of the optical assembly, e.g., a pellicle assembly. The UV radiation that has passed through the coating layer is passed through a matrix of individual nanotubes or matrix of nanotube bundles. UV radiation that passes through the matrix of individual nanotubes or matrix of nanotube bundles is reflected from a mask and received at a semiconductor substrate.Type: ApplicationFiled: May 16, 2022Publication date: May 25, 2023Inventors: Wei-Hao LEE, Pei-Cheng HSU, Huan-Ling LEE, Ta-Cheng LIEN, Hsin-Chang LEE, Chin-Hsiang LIN