Patents by Inventor Wei-Hsiang Chan

Wei-Hsiang Chan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11982866
    Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.
    Type: Grant
    Filed: December 15, 2022
    Date of Patent: May 14, 2024
    Assignee: TDK TAIWAN CORP.
    Inventors: Chao-Chang Hu, Liang-Ting Ho, Chen-Er Hsu, Yi-Liang Chan, Fu-Lai Tseng, Fu-Yuan Wu, Chen-Chi Kuo, Ying-Jen Wang, Wei-Han Hsia, Yi-Hsin Tseng, Wen-Chang Lin, Chun-Chia Liao, Shou-Jen Liu, Chao-Chun Chang, Yi-Chieh Lin, Shang-Yu Hsu, Yu-Huai Liao, Shih-Wei Hung, Sin-Hong Lin, Kun-Shih Lin, Yu-Cheng Lin, Wen-Yen Huang, Wei-Jhe Shen, Chih-Shiang Wu, Sin-Jhong Song, Che-Hsiang Chiu, Sheng-Chang Lin
  • Publication number: 20240096696
    Abstract: Provided are conductive structures located within dielectric material, and methods for fabricating such structures and devices. An exemplary method includes providing a substrate having a conductive feature in a first dielectric layer; depositing a second dielectric layer over the conductive feature and the first dielectric layer; etching the second dielectric layer to form a cavity through the second dielectric layer, wherein the cavity has a bottom with a convex profile; depositing a barrier layer along the bottom of the cavity; and depositing a conductive material in the cavity to form a structure electrically connected to the conductive feature.
    Type: Application
    Filed: January 18, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Lien Huang, Wei Hsiang Chan
  • Publication number: 20230369224
    Abstract: A structure includes a first conductive feature in a first dielectric layer; a second dielectric layer over the first dielectric layer; and a second conductive feature extending through the second dielectric layer to physically contact the first conductive feature, wherein the second conductive feature includes a metal adhesion layer over and physically contacting the first conductive feature; a barrier layer extending along sidewalls of the second dielectric layer; and a conductive filling material extending over the metal adhesion layer and the barrier layer, wherein a portion of the conductive filling material extends between the barrier layer and the metal adhesion layer.
    Type: Application
    Filed: July 25, 2023
    Publication date: November 16, 2023
    Inventors: Chia-Pang Kuo, Chih-Yi Chang, Ming-Hsiao Hsieh, Wei-Hsiang Chan, Ya-Lien Lee, Chien Chung Huang, Chun-Chieh Lin, Hung-Wen Su
  • Patent number: 11810857
    Abstract: A structure includes a first conductive feature in a first dielectric layer; a second dielectric layer over the first dielectric layer; and a second conductive feature extending through the second dielectric layer to physically contact the first conductive feature, wherein the second conductive feature includes a metal adhesion layer over and physically contacting the first conductive feature; a barrier layer extending along sidewalls of the second dielectric layer; and a conductive filling material extending over the metal adhesion layer and the barrier layer, wherein a portion of the conductive filling material extends between the barrier layer and the metal adhesion layer.
    Type: Grant
    Filed: August 25, 2020
    Date of Patent: November 7, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Pang Kuo, Chih-Yi Chang, Ming-Hsiao Hsieh, Wei-Hsiang Chan, Ya-Lien Lee, Chien Chung Huang, Chun-Chieh Lin, Hung-Wen Su
  • Publication number: 20220367266
    Abstract: A method includes forming a first conductive feature, depositing a graphite layer over the first conductive feature, patterning the graphite layer to form a graphite conductive feature, depositing a dielectric spacer layer on the graphite layer, depositing a first dielectric layer over the dielectric spacer layer, planarizing the first dielectric layer, forming a second dielectric layer over the first dielectric layer, and forming a second conductive feature in the second dielectric layer. The second conductive feature is over and electrically connected to the graphite conductive feature.
    Type: Application
    Filed: July 21, 2021
    Publication date: November 17, 2022
    Inventors: Shu-Cheng Chin, Chih-Yi Chang, Wei Hsiang Chan, Chih-Chien Chi, Chi-Feng Lin, Hung-Wen Su
  • Publication number: 20220068826
    Abstract: A structure includes a first conductive feature in a first dielectric layer; a second dielectric layer over the first dielectric layer; and a second conductive feature extending through the second dielectric layer to physically contact the first conductive feature, wherein the second conductive feature includes a metal adhesion layer over and physically contacting the first conductive feature; a barrier layer extending along sidewalls of the second dielectric layer; and a conductive filling material extending over the metal adhesion layer and the barrier layer, wherein a portion of the conductive filling material extends between the barrier layer and the metal adhesion layer.
    Type: Application
    Filed: August 25, 2020
    Publication date: March 3, 2022
    Inventors: Chia-Pang Kuo, Chih-Yi Chang, Ming-Hsiao Hsieh, Wei-Hsiang Chan, Ya-Lien Lee, Chien Chung Huang, Chun-Chieh Lin, Hung-Wen Su