Abstract: A method of manufacturing a semiconductor device includes forming a first semiconductor layer having a first composition over a semiconductor substrate, and forming a second semiconductor layer having a second composition over the first semiconductor layer. Another first semiconductor layer having the first composition is formed over the second semiconductor layer. A third semiconductor layer having a third composition is formed over the another first semiconductor layer. The first semiconductor layers, second semiconductor layer, and third semiconductor layer are patterned to form a fin structure. A portion of the third semiconductor layer is removed thereby forming a nanowire comprising the second semiconductor layer, and a conductive material is formed surrounding the nanowire. The first semiconductor layers, second semiconductor layer, and third semiconductor layer include different materials.

Abstract: The application discloses a semiconductor memory device and a data storage method. When determining that an input data conforms to a target format, an input data vector is generated based on the input data. When determining that the input data is similar to a stored data in a target block of the memory array, the input data is written to a blank target memory page of the target block of the memory array.

Abstract: A semiconductor device includes a layer having a semiconductive material. The layer includes an outwardly-protruding fin structure. An isolation structure is disposed over the layer but not over the fin structure. A first spacer and a second spacer are each disposed over the isolation structure and on sidewalls of the fin structure. The first spacer is disposed on a first sidewall of the fin structure. The second spacer is disposed on a second sidewall of the fin structure opposite the first sidewall. The second spacer is substantially taller than the first spacer. An epi-layer is grown on the fin structure. The epi-layer protrudes laterally. A lateral protrusion of the epi-layer is asymmetrical with respect to the first side and the second side.

Abstract: A method includes forming a dielectric layer over an epitaxial source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the epitaxial source/drain region. A barrier layer is formed on a sidewall and a bottom of the opening. An oxidation process is performing on the sidewall and the bottom of the opening. The oxidation process transforms a portion of the barrier layer into an oxidized barrier layer and transforms a portion of the dielectric layer adjacent to the oxidized barrier layer into a liner layer. The oxidized barrier layer is removed. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with the liner layer.

Abstract: An apparatus for manufacturing a semiconductor device includes a fluid dispense nozzle configured to dispense a photoresist composition on a semiconductor substrate, and a first camera configured to obtain a first image of the fluid dispense nozzle. The apparatus further includes a second camera configured to obtain a second image of the fluid dispense nozzle, the second image having a higher resolution than the first image, and an image recognition system operably coupled to the first and second cameras. The image recognition system includes a memory storing instructions and at least one processor that executes the instructions to obtain an image of a benchmark fluid dispense nozzle using the second camera, and determine a width of the benchmark fluid dispense nozzle at multiple intervals along the benchmark fluid dispense nozzle and a width of a spray pattern of the photoresist composition being dispensed from the benchmark fluid dispense nozzle.

Abstract: A method of manufacturing a semiconductor device includes forming a first semiconductor layer having a first composition over a semiconductor substrate, and forming a second semiconductor layer having a second composition over the first semiconductor layer. Another first semiconductor layer having the first composition is formed over the second semiconductor layer. A third semiconductor layer having a third composition is formed over the another first semiconductor layer. The first semiconductor layers, second semiconductor layer, and third semiconductor layer are patterned to form a fin structure. A portion of the third semiconductor layer is removed thereby forming a nanowire comprising the second semiconductor layer, and a conductive material is formed surrounding the nanowire. The first semiconductor layers, second semiconductor layer, and third semiconductor layer include different materials.

Abstract: A method for manufacturing a semiconductor device includes obtaining a first image of a fluid dispense nozzle using a first camera, the fluid dispense nozzle configured to dispense fluid on a semiconductor substrate, obtaining a second image of the fluid dispense nozzle using a second camera, the second image having a higher resolution than the first image, determining a width of the fluid dispense nozzle at multiple intervals along the fluid dispense nozzle and a width of a spray pattern of a fluid being dispensed from the fluid dispense nozzle at multiple intervals along the spray pattern, fitting a first straight line to a series of data points representing a plurality of widths of the intervals along the fluid dispense nozzle and a plurality of widths of the intervals along the spray pattern, determining a first slope of the first straight line, and determining a condition of the spray pattern and the fluid dispense nozzle based on the first slope.

Abstract: A power metal-oxide-semiconductor structure includes a semiconductor substrate, a gate electrode disposed above the semiconductor substrate, a field plate, and an electrically conductive pattern. The gate electrode and the field plate are disposed above the semiconductor substrate, the electrically conductive pattern is disposed between the field plate and the semiconductor substrate in a vertical direction, and the field plate and the electrically conductive pattern are located at the same side of the gate electrode in a horizontal direction. A manufacturing method of a power metal-oxide-semiconductor structure includes the following steps. The electrically conductive pattern and the field plate are formed above a first region of the semiconductor substrate. Subsequently, the gate electrode is formed above the first region of the semiconductor substrate.

Abstract: A memory device and method of making the same are disclosed. The memory device includes transistor devices located in both a memory region and a logic region of the device. Transistor devices in the memory region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, a second oxide layer over the first nitride layer, and a second nitride layer over the second oxide layer. Transistor devices in the logic region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, and a second nitride layer over the first nitride layer.

Abstract: The invention relates to a power tool that can be held with one hand for reversing, comprising: a casing having a grip part and a manipulation port; a driving device having a control member; the control member is capable of controlling an actuation direction of the driving device; a power source disposed below the driving device and capable of driving the driving device; a reversing assembly disposed at a periphery of the power source and having a reversing member; the reversing member controls the control member to generate changes of displacement, a driving direction of the driving device is changed by action of turning the reversing assembly that is away from the driving device, and there is an appropriate manipulating distance between the grip part and the manipulation port, so that a user is capable of manipulating by holding and reversing the power tool with one hand at a same position.

Abstract: A method for manufacturing a diamond-like carbon film is described, which includes the following steps. A substrate is disposed into a chamber. An aromatic cyclic hydrocarbon is introduced into the chamber. A diamond-like carbon film is grown on the substrate by using the aromatic cyclic hydrocarbon as a reaction precursor The step of growing the diamond-like carbon film includes controlling a substrate temperature at 200 Celsius degrees to 800 Celsius degrees.

Abstract: A method for manufacturing a diamond-like carbon film is described, which includes the following steps. A substrate is disposed into a chamber. An aromatic cyclic hydrocarbon is introduced into the chamber. A diamond-like carbon film is grown on the substrate by using the aromatic cyclic hydrocarbon as a reaction precursor The step of growing the diamond-like carbon film includes controlling a substrate temperature at 200 Celsius degrees to 800 Celsius degrees.