Patents by Inventor Wei Hsien Hsieh

Wei Hsien Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240178120
    Abstract: An integrated fan-out package includes a first redistribution structure, a die, conductive structures, an encapsulant, and a second redistribution structure. The first redistribution structure has first regions and a second region surrounding the first regions. A metal density in the first regions is smaller than a metal density in the second region. The die is disposed over the first redistribution structure. The conductive structures are disposed on the first redistribution structure to surround the die. Vertical projections of the conductive structures onto the first redistribution structure fall within the first regions of the first redistribution structure. The encapsulant encapsulates the die and the conductive structures. The second redistribution structure is disposed on the encapsulant, the die, and the conductive structures.
    Type: Application
    Filed: February 8, 2023
    Publication date: May 30, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Ming Weng, Tzu-Sung Huang, Wei-Kang Hsieh, Hao-Yi Tsai, Ming-Hung Tseng, Tsung-Hsien Chiang, Yen-Liang Lin, Chu-Chun Chueh
  • Patent number: 11978678
    Abstract: A display device includes a first substrate, a light-emitting element, a light conversion layer, and a color filter layer. The light-emitting element is disposed on the first substrate. The light conversion layer is disposed on the light-emitting element. In addition, the color filter layer is overlapped the light-emitting element and the light conversion layer.
    Type: Grant
    Filed: August 5, 2022
    Date of Patent: May 7, 2024
    Assignee: INNOLUX CORPORATION
    Inventors: Tung-Kai Liu, Tsau-Hua Hsieh, Wei-Cheng Chu, Chun-Hsien Lin, Chandra Lius, Ting-Kai Hung, Kuan-Feng Lee, Ming-Chang Lin, Tzu-Min Yan, Hui-Chieh Wang
  • Patent number: 11955439
    Abstract: A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.
    Type: Grant
    Filed: January 17, 2023
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Cheng Wu, Chien-Chia Chiu, Cheng-Hsien Hsieh, Li-Han Hsu, Meng-Tsan Lee, Tsung-Shu Lin
  • Publication number: 20140072801
    Abstract: A peptide nanotube (PNT) device and method of manufacturing thereof are disclosed herein. The PNT device comprises PNTs composed of cyclo-(D-Trp-Tyr) peptide and a matrix, including biomolecules, complexed with the PNTs. The PNT device is biodegradable and biocompatible, as well as capable of being uptake by mammalian cells. Wherein, the biomolecules comprise peptides, proteins, nucleic acids including DNA, shRNA and siRNA, and drugs. The method for manufacturing PNT device comprises: dissolving a cyclo-(D-Trp-Tyr) peptide powder in a solvent to be a solution in a container; incubating the solution at a predetermined temperature for a predetermined time for the solvent to evaporate to obtain PNTs formed of cyclo-(D-Trp-Tyr) peptide; and mixing the PNTs with a matrix including biomolecules to obtain the PNT device.
    Type: Application
    Filed: September 12, 2012
    Publication date: March 13, 2014
    Applicant: Jiahorng Liaw
    Inventors: Jiahorng Liaw, Wei-Hsien Hsieh, Jeng-Hsien Chen, Shwu-Fen Chang, Hui-Min Chen
  • Publication number: 20080146031
    Abstract: A method for semiconductor structure formation includes: providing a substrate; forming a first lower mask layer on the substrate; forming a first patterned mask on the first lower mask layer; forming a second lower mask layer on the first lower mask layer and overlaying the first patterned mask; forming a second patterned mask on the second lower mask layer without the second patterned mask overlapping the first patterned mask; etching and undercutting the first lower mask layer and the second lower mask layer to form the third patterned mask with the first patterned mask and the second patterned mask; etching the substrate by using the third patterned mask to form a plurality of islands; and removing the third patterned mask.
    Type: Application
    Filed: December 13, 2007
    Publication date: June 19, 2008
    Inventors: Hung Jen Liu, Wei Hsien Hsieh, Chang-Ho Yeh