Patents by Inventor Wei Hsin

Wei Hsin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor waveguide optical gain device with lateral current confinement
    Patent number: 12592546
    Abstract: A semiconductor optical device includes n-doped, p-doped, and active layers, an optical waveguide structure, and drive current structure(s). The waveguide structure defines optical mode(s); the drive current structure defines a drive current path. One or both of those structures are arranged to result in a selected (or maximized) degree of overlap between lateral profiles of current density and optical intensity. The optical device can be arranged as a diode laser or optical amplifier.
    Type: Grant
    Filed: February 19, 2025
    Date of Patent: March 31, 2026
    Assignee: HieFo Corporation
    Inventors: Henry A. Blauvelt, Wei Hsin
  • Semiconductor waveguide optical gain device with lateral current confinement or optical mode shaping
    Patent number: 12456849
    Abstract: A semiconductor optical device includes n-doped, p-doped, and active layers, an optical waveguide structure, and drive current structure(s). The waveguide structure defines optical mode(s); the drive current structure defines a drive current path. One or both of those structures are arranged to result in a selected (or maximized) degree of overlap between lateral profiles of current density and optical intensity. The optical device can be arranged as a diode laser or optical amplifier.
    Type: Grant
    Filed: February 19, 2025
    Date of Patent: October 28, 2025
    Assignee: HieFo Corporation
    Inventors: Henry A. Blauvelt, Wei Hsin
  • Semiconductor waveguide optical gain device with optical mode shaping
    Patent number: 12431690
    Abstract: A semiconductor optical device includes n-doped, p-doped, and active layers, an optical waveguide structure, and drive current structure(s). The waveguide structure defines optical mode(s); the drive current structure defines a drive current path. One or both of those structures are arranged to result in a selected (or maximized) degree of overlap between lateral profiles of current density and optical intensity. The optical device can be arranged as a diode laser or optical amplifier.
    Type: Grant
    Filed: February 19, 2025
    Date of Patent: September 30, 2025
    Assignee: HieFo Corporation
    Inventors: Henry A. Blauvelt, Wei Hsin
  • Surface-emitting laser diode
    Patent number: 5068869
    Abstract: A surface-emitting semiconductor laser diode has a vertical multilayer active region and a lateral buried heterojunction. Effective carrier confinement to the active region is achieved, thereby permitting laser action at room temperature under continuous-wave operation with a low threshold current of about 2 mA.
    Type: Grant
    Filed: July 14, 1988
    Date of Patent: November 26, 1991
    Assignee: Lockheed Missiles & Space Company, Inc.
    Inventors: Shing C. Wang, Mutsuo Ogura, Shyh Wang, Wei Hsin