Patents by Inventor Wei-Hsin WU
Wei-Hsin WU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240400691Abstract: This disclosure relates to protein complexes targeting CD47, PD-L1, and/or TGF?, and methods of use thereof. In one aspect, the protein complexes include a CD47-binding domain having all or a portion of the SIRP? extracellular region; a PD-L1-binding domains having a VHH that binds to PD-L1; and optionally a TGF?-binding domain having all or a portion of the TGFBRII extracellular region.Type: ApplicationFiled: July 12, 2024Publication date: December 5, 2024Inventors: Jiin-Tarng WANG, Han-Fang TENG, Yun-Chih CHENG, Pan-Hsien KUO, Chieh-Hsin HO, Wei-Tse SUN, Chia-Zhen WU, Tsai-Kuei SHEN, Chi-Ling TSENG, Zong Sean JUO
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Publication number: 20240373626Abstract: A semiconductor structure including a semiconductor substrate and at least one patterned dielectric layer is provided. The semiconductor substrate includes a semiconductor portion, at least one first device, at least one second device and at least one first dummy ring. The at least one first device is disposed on a first region surrounded by the semiconductor portion. The at least one second device and the at least one first dummy ring are disposed on a second region, and the second region surrounds the first region. The at least one patterned dielectric layer covers the semiconductor substrate.Type: ApplicationFiled: July 18, 2024Publication date: November 7, 2024Inventors: Meng-Han Lin, Te-Hsin Chiu, Wei-Cheng Wu, Li-Feng Teng, Chien-Hung Chang
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Publication number: 20240371768Abstract: An integrated circuit includes a first and second conductor, and a first and second pair of transistors. The first conductor is on a back-side of a substrate, extending in a first direction, and being configured to supply a first supply voltage. The second conductor is on the back-side of the substrate, and extending in the first direction. The first pair of transistors includes a first gate extending in a second direction, overlapping at least the second conductor, being located on a first level of a front-side of the substrate opposite from the back-side. The second pair of transistors includes a second gate extending in the second direction, overlapping at least the second conductor, being on the first level, and being separated from the first gate in the first direction. The second conductor electrically couples the first gate and the second gate together.Type: ApplicationFiled: July 16, 2024Publication date: November 7, 2024Inventors: Guo-Huei WU, Pochun WANG, Wei-Hsin TSAI, Chih-Liang CHEN, Li-Chun TIEN
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Publication number: 20240361701Abstract: A method of inspecting an extreme ultraviolet (EUV) radiation source includes, in an idle mode, inserting a borescope mounted on a fixture through a first opening into a chamber of the EUV radiation source. The borescope includes a connection cable attached at a first end to a camera. The EUV radiation source includes an excitation laser that generates a light beam that is configured to focus onto tin droplets to generate EUV radiation inside the chamber of the EUV radiation source. The method further includes extending the extendible section, in a direction toward the second opening of the EUV radiation source, to move the camera beyond the blocking shield, and acquiring one or more images from a region beyond the blocking shield. The method also includes analyzing the one or more acquired images to determine an amount of tin debris deposited inside the chamber of the EUV radiation source.Type: ApplicationFiled: July 9, 2024Publication date: October 31, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chiao-Hua CHENG, Sheng-Kang YU, Shang-Chieh CHIEN, Wei-Chun YEN, Heng-Hsin LIU, Ming-Hsun TSAI, Yu-Fa LO, Li-Jui CHEN, Wei-Shin CHENG, Cheng-Hsuan WU, Cheng-Hao LAI, Yu-Kuang SUN, Yu-Huan CHEN
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Patent number: 12127399Abstract: A semiconductor structure including a semiconductor substrate and at least one patterned dielectric layer is provided. The semiconductor substrate includes a semiconductor portion, at least one first device, at least one second device and at least one first dummy ring. The at least one first device is disposed on a first region surrounded by the semiconductor portion. The at least one second device and the at least one first dummy ring are disposed on a second region, and the second region surrounds the first region. The at least one patterned dielectric layer covers the semiconductor substrate.Type: GrantFiled: May 25, 2023Date of Patent: October 22, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Meng-Han Lin, Te-Hsin Chiu, Wei-Cheng Wu, Li-Feng Teng, Chien-Hung Chang
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Publication number: 20240347493Abstract: A semiconductor package includes a flexible circuit board and a chip which includes a first bump group and a second bump group. First bumps of the first bump group and second bumps of the second bump group are provided to be bonded to leads on the flexible circuit board. The second bumps are designed to be longer than the first bumps in length so as to increase bonding strength of the second bumps to the leads, prevent the leads from being shifted and separated from the first and second bumps and prevent lead bonding misalignment.Type: ApplicationFiled: October 25, 2023Publication date: October 17, 2024Inventors: Wei-Hsin Wu, Ku-Pang Chang, Chun-Chia Yeh
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Publication number: 20240347579Abstract: A semiconductor device and a manufacturing method thereof are provided. The method includes forming an isolation structure in a substrate to define an isolating region and forming a capacitor structure on an upper surface of the isolation structure and comprising a first semiconductor structure and a second semiconductor structure separated by an insulator pattern. The first semiconductor structure and the second semiconductor structure are formed with upper surfaces aligned with one another.Type: ApplicationFiled: June 28, 2024Publication date: October 17, 2024Inventors: Meng-Han Lin, Te-Hsin Chiu, Wei Cheng Wu, Te-An Chen
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Patent number: 12087809Abstract: A semiconductor device and a manufacturing method thereof are provided. The method includes forming an isolation structure in a substrate to define an isolating region and forming a capacitor structure on an upper surface of the isolation structure and comprising a first semiconductor structure and a second semiconductor structure separated by an insulator pattern. The first semiconductor structure and the second semiconductor structure are formed with upper surfaces aligned with one another.Type: GrantFiled: December 9, 2022Date of Patent: September 10, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Meng-Han Lin, Te-Hsin Chiu, Wei Cheng Wu, Te-An Chen
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Patent number: 12080647Abstract: An integrated circuit includes a first power rail, a conductive structure, a first active region of a first set of transistors and a second active region of a second set of transistors. The first power rail is on a back-side of a substrate, extends in a first direction, and is configured to supply a first supply voltage. The first active region extends in the first direction, and is on a first level of a front-side of the substrate opposite from the back-side. The second active region extends in the first direction, is on the first level of the front-side of the substrate, and is separated from the first active region in a second direction different from the first direction. The conductive structure is on the back-side of the substrate, extends in the first direction, and is electrically coupled to the first active region and the second active region.Type: GrantFiled: December 14, 2022Date of Patent: September 3, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Guo-Huei Wu, Pochun Wang, Wei-Hsin Tsai, Chih-Liang Chen, Li-Chun Tien
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Patent number: 12066761Abstract: In a method of inspecting an extreme ultraviolet (EUV) radiation source, during an idle mode, a borescope mounted on a fixture is inserted through a first opening into a chamber of the EUV radiation source. The borescope includes a connection cable attached at a first end to a camera. The fixture includes an extendible section mounted from a first side on a lead screw, and the camera of the borescope is mounted on a second side, opposite to the first side, of the extendible section. The extendible section is extended to move the camera inside the chamber of the EUV radiation source. One or more images are acquired by the camera from inside the chamber of the EUV radiation source at one or more viewing positions. The one or more acquired images are analyzed to determine an amount of tin debris deposited inside the chamber of the EUV radiation source.Type: GrantFiled: August 30, 2021Date of Patent: August 20, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chiao-Hua Cheng, Sheng-Kang Yu, Shang-Chieh Chien, Wei-Chun Yen, Heng-Hsin Liu, Ming-Hsun Tsai, Yu-Fa Lo, Li-Jui Chen, Wei-Shin Cheng, Cheng-Hsuan Wu, Cheng-Hao Lai, Yu-Kuang Sun, Yu-Huan Chen
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Publication number: 20240264405Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.Type: ApplicationFiled: April 16, 2024Publication date: August 8, 2024Inventors: Chao-Chang HU, Liang-Ting HO, Chen-Er HSU, Yi-Liang CHAN, Fu-Lai TSENG, Fu-Yuan WU, Chen-Chi KUO, Ying-Jen WANG, Wei-Han HSIA, Yi-Hsin TSENG, Wen-Chang LIN, Chun-Chia LIAO, Shou-Jen LIU, Chao-Chun CHANG, Yi-Chieh LIN, Shang-Yu HSU, Yu-Huai LIAO, Shih-Wei HUNG, Sin-Hong LIN, Kun-Shih LIN, Yu-Cheng LIN, Wen-Yen HUANG, Wei-Jhe SHEN, Chih-Shiang WU, Sin-Jhong SONG, Che-Hsiang CHIU, Sheng-Chang LIN
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Publication number: 20240178402Abstract: A negative electrode and a battery employing the same are provided. The negative electrode includes a negative electrode active layer and a protective layer. The protective layer is disposed on the negative electrode active layer, wherein the protective layer includes a nanopowder and a binder. The nanopowder has a specific surface area of 30 m2/g to 1,000 m2/g. The nanopowder has a binding energy less than or equal to ?2.5 eV. The weight ratio of the nanopowder to the binder is from 51:49 to 99:1. The nanopowder is a compound having a structure represented by Formula (I) MiXj??Formula (I) wherein M is Al, Mg, Zr, Zn, or Si, and X is O or N; i is 1, 2 or 3, and j is 1, 2, 3 or 4.Type: ApplicationFiled: November 27, 2023Publication date: May 30, 2024Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chun-Lung LI, Wei-Hsin WU, Chia-Chen FANG, Deng-Tswen SHIEH, Hao-Tzu HUANG
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Patent number: 11482725Abstract: An electrode and a lithium-ion battery employing the electrode are provided. The electrode includes an active layer, a conductive layer, and a non-conductive layer. The conductive layer is disposed on the top surface of the active layer. The conductive layer includes a first porous film and a conductive lithiophilic material, and the conductive lithiophilic material is within the first porous film and covers the inner surface of the first porous film. The non-conductive layer includes a second porous film and a non-conductive lithiophilic material, and the non-conductive lithiophilic material is within the second porous film and covers the inner surface of the second porous film. The conductive layer is disposed between the active layer and the non-conductive layer. The binding energy (?G) of the lithiophilic material with lithium is less than or equal to ?2.6 eV.Type: GrantFiled: December 17, 2020Date of Patent: October 25, 2022Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Wei-Hsin Wu, Chih-Ching Chang, Yu Fang Huang, Li-Ju Chen, Chia-Chen Fang
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Publication number: 20220209218Abstract: A negative electrode and a lithium ion battery employing the same are provided. The negative electrode includes an active layer and a composite layer disposed on the active layer. The composite layer includes a lithiophilic nanoparticle, a metal nanoparticle and a binder. The binding energy (?E) of the lithiophilic nanoparticle with lithium is less than or equal to ?2.5 eV. The metal nanoparticle has a standard Gibbs free energy of reaction (?rG) less than 0. The weight ratio of the lithiophilic nanoparticle to the metal nanoparticle is from 1:1 to 8:1, and the amount of binder is from 10 wt % to 25 wt %, based on the total weight of the lithiophilic nanoparticle and the metal nanoparticle.Type: ApplicationFiled: December 7, 2021Publication date: June 30, 2022Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Wei-Hsin WU, Chih-Ching CHANG, Chia-Chen FANG
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Patent number: 11264647Abstract: A battery is provided, which includes an anode and a cathode. The anode includes a first current collector and anode active material. The anode active material is lithium metal or lithium alloy. The cathode includes a second current collector and cathode active material. The battery also includes an electrolyte film disposed between the cathode and the anode, and a porous film disposed between the electrolyte film and the anode. The battery includes an anolyte in the porous film between the electrolyte film and the anode, and a catholyte between the electrolyte film and the cathode. The catholyte is different from the anolyte, and the anolyte and the catholyte are separated by the electrolyte film and are not in contact with each other.Type: GrantFiled: September 26, 2019Date of Patent: March 1, 2022Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Wei-Hsin Wu, Chih-Ching Chang, Han-Jung Li, Jen-Jeh Lee, Chia-Chen Fang
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Publication number: 20210210745Abstract: An electrode and a lithium-ion battery employing the electrode are provided. The electrode includes an active layer, a conductive layer, and a non-conductive layer. The conductive layer is disposed on the top surface of the active layer. The conductive layer includes a first porous film and a conductive lithiophilic material, and the conductive lithiophilic material is within the first porous film and covers the inner surface of the first porous film. The non-conductive layer includes a second porous film and a non-conductive lithiophilic material, and the non-conductive lithiophilic material is within the second porous film and covers the inner surface of the second porous film. The conductive layer is disposed between the active layer and the non-conductive layer. The binding energy (?G) of the lithiophilic material with lithium is less than or equal to ?2.6 eV.Type: ApplicationFiled: December 17, 2020Publication date: July 8, 2021Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Wei-Hsin WU, Chih-Ching CHANG, Yu Fang HUANG, Li-Ju CHEN, Chia-Chen FANG
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Publication number: 20210194049Abstract: A battery is provided. The battery includes a positive electrode, a negative electrode, and a solid electrolyte membrane. The positive electrode includes a positive active layer. The negative electrode includes a negative active layer and a modified layer, wherein the modified layer is disposed on the negative active layer. The modified layer includes a metal fluoride and a lithium-containing compound. The solid electrolyte membrane includes a first porous layer, an electrolyte layer, and a second porous layer, wherein the electrolyte layer is disposed between the first porous layer and the second porous layer.Type: ApplicationFiled: December 15, 2020Publication date: June 24, 2021Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chih-Ching Chang, Wei-Hsin Wu, Chung-Hsiang Chao, Chun-Lung Li, Chia-Chen Fang
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Patent number: 10790538Abstract: A lithium ion battery is provided, which includes a positive electrode, a negative electrode, and an electrolyte disposed between the positive electrode and the negative electrode. The negative electrode includes a current collector and a ?-phase-based polyvinylidene fluoride (?-PVDF) layer coating on the current collector. The ?-PVDF layer may have a thickness of 1 ?m to 10 ?m.Type: GrantFiled: August 9, 2018Date of Patent: September 29, 2020Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chung-Hsiang Chao, Chia-Chen Fang, Chih-Ching Chang, Wei-Hsin Wu, Nae-Lih Wu, Sheng-Hui Wu, Jing Luo
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Publication number: 20200161708Abstract: A battery is provided, which includes an anode and a cathode. The anode includes a first current collector and anode active material. The anode active material is lithium metal or lithium alloy. The cathode includes a second current collector and cathode active material. The battery also includes an electrolyte film disposed between the cathode and the anode, and a porous film disposed between the electrolyte film and the anode. The battery includes an anolyte in the porous film between the electrolyte film and the anode, and a catholyte between the electrolyte film and the cathode. The catholyte is different from the anolyte, and the anolyte and the catholyte are separated by the electrolyte film and are not in contact with each other.Type: ApplicationFiled: September 26, 2019Publication date: May 21, 2020Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Wei-Hsin WU, Chih-Ching CHANG, Han-Jung LI, Jen-Jeh LEE, Chia-Chen FANG
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Patent number: 10553900Abstract: A precursor composition of a gel electrolyte is provided, which includes (1) meta-stable nitrogen-containing polymer, (2) gelling promoter, (3) carbonate compound, and (4) metal salt. The (1) meta-stable nitrogen-containing polymer is formed by reacting (a) nitrogen-containing heterocyclic compound with (b) maleimide compound, wherein (a) nitrogen-containing heterocyclic compound and (b) maleimide compound have a molar ratio of 1:0.1 to 1:10.Type: GrantFiled: August 29, 2016Date of Patent: February 4, 2020Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yueh-Wei Lin, Jason Fang, Wei-Hsin Wu, Chung-Hsiang Chao, Chih-Ching Chang