Patents by Inventor Wei-Hsing Wang

Wei-Hsing Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11942469
    Abstract: An integrated circuit includes a first-type active-region structure, a second-type active-region structure on a substrate, and a plurality of gate-conductors. The integrated circuit also includes a backside horizontal conducting line in a backside first conducting layer below the substrate, a backside vertical conducting line in a backside second conducting layer below the backside first conducting layer, and a pin-connector for a circuit cell. The pin-connector is directly connected between the backside horizontal conducting line and the backside vertical conducting line. The backside horizontal conducting line extends across a vertical boundary of the circuit cell.
    Type: Grant
    Filed: June 10, 2021
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wei-An Lai, Shih-Wei Peng, Te-Hsin Chiu, Jiann-Tyng Tzeng, Chung-Hsing Wang
  • Patent number: 11916110
    Abstract: Embodiments of the present disclosure provide a method for forming semiconductor device structures. The method includes forming a fin structure having a stack of semiconductor layers comprising first semiconductor layers and second semiconductor layers alternatingly arranged, forming a sacrificial gate structure over a portion of the fin structure, removing the first and second semiconductor layers in a source/drain region of the fin structure that is not covered by the sacrificial gate structure, forming an epitaxial source/drain feature in the source/drain region, removing portions of the sacrificial gate structure to expose the first and second semiconductor layers, removing portions of the second semiconductor layers so that at least one second semiconductor layer has a width less than a width of each of the first semiconductor layers, forming a conformal gate dielectric layer on exposed first and second semiconductor layers, and forming a gate electrode layer on the conformal gate dielectric layer.
    Type: Grant
    Filed: July 4, 2022
    Date of Patent: February 27, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Ching Wang, Wei-Yang Lee, Ming-Chang Wen, Jo-Tzu Hung, Wen-Hsing Hsieh, Kuan-Lun Cheng
  • Patent number: 9025328
    Abstract: A heat dissipation module includes a fan and a thermal fin portion. The fan includes a fan body, a plurality of blade units and a plurality of blade extensions. The blade units are connected to the fan body. The blade extensions protrude from the blade units, respectively. A first surface is formed on a side of each of the blade extensions. A distance between the first surface and an axis of the fan body is increasing along an inflow direction. The thermal fin portion includes a plurality of fin units and a plurality of fin extensions respectively protruding from the fin units. A second surface is formed on a side facing the fan extension of each of the fin extension. An identical gap is formed between at least one portion of the first surface and at least one portion of the second surface.
    Type: Grant
    Filed: December 26, 2012
    Date of Patent: May 5, 2015
    Assignee: Wistron Corporation
    Inventors: Meng-Ting Chiang, Yao-Lung Tsai, Wei-Hsing Wang, Chieu-Tu Cheng
  • Publication number: 20130250518
    Abstract: A heat dissipation module includes a fan and a thermal fin portion. The fan includes a fan body, a plurality of blade units and a plurality of blade extensions. The blade units are connected to the fan body. The blade extensions protrude from the blade units, respectively. A first surface is formed on a side of each of the blade extensions. A distance between the first surface and an axis of the fan body is increasing along an inflow direction. The thermal fin portion includes a plurality of fin units and a plurality of fin extensions respectively protruding from the fin units. A second surface is formed on a side facing the fan extension of each of the fin extension. An identical gap is formed between at least one portion of the first surface and at least one portion of the second surface.
    Type: Application
    Filed: December 26, 2012
    Publication date: September 26, 2013
    Applicant: WISTRON CORPORATION
    Inventors: Meng-Ting Chiang, Yao-Lung Tsai, Wei-Hsing Wang, Chieu-Tu Cheng
  • Publication number: 20130075073
    Abstract: A heat-dissipating fin comprises a first longitudinal section, a second longitudinal section, a first contacting section extending transversely from the first longitudinal section, a second contacting section extending transversely from the second longitudinal section, and a third contacting section connected between the first longitudinal section and the second longitudinal section and extending transversely. When a plurality of heat-dissipating fins are assembled, contact among the first contacting sections, among the second contacting sections, and among the third contacting sections of the heat-dissipating fins are established.
    Type: Application
    Filed: August 3, 2012
    Publication date: March 28, 2013
    Applicant: Wistron Corporation
    Inventors: Wei-Hsing Wang, Meng-Ting Chiang, Yao-Lung Tsai