Patents by Inventor Wei-Hsuan Liang

Wei-Hsuan Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FIXING BLANK MASK DEFECTS BY REVISING LAYOUTS
    Publication number: 20210311402
    Abstract: A method of adjusting a layout pattern includes shifting or rotating an entire layout pattern based on information of a plurality of defects of a mask-blank to avoid an impact of first defects of the plurality of defects when the layout pattern is produced as a mask on the mask-blank. The method includes adjusting the layout pattern of the mask at a first location based on information of a second defect of a remaining of the plurality of defects to reduce an impact of the second defect when the layout pattern in projected on a wafer. The method also includes adjusting the layout pattern of the mask at a second location based on information of a third defect of the remaining of the plurality of defects and distinct from the second defect to shift an impact position of the third defect when the layout pattern in projected on the wafer.
    Type: Application
    Filed: April 1, 2020
    Publication date: October 7, 2021
    Inventors: Shih-Ming CHANG, Wei-Hsuan LIANG
  • Fixing blank mask defects by revising layouts
    Patent number: 11137691
    Abstract: A method of adjusting a layout pattern includes shifting or rotating an entire layout pattern based on information of a plurality of defects of a mask-blank to avoid an impact of first defects of the plurality of defects when the layout pattern is produced as a mask on the mask-blank. The method includes adjusting the layout pattern of the mask at a first location based on information of a second defect of a remaining of the plurality of defects to reduce an impact of the second defect when the layout pattern in projected on a wafer. The method also includes adjusting the layout pattern of the mask at a second location based on information of a third defect of the remaining of the plurality of defects and distinct from the second defect to shift an impact position of the third defect when the layout pattern in projected on the wafer.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: October 5, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Ming Chang, Wei-Hsuan Liang