Abstract: A plurality of small copper-filled TSV (through silicon via) interposer slivers dispersed in a fan-out wafer level package (FOWLP) for wire bonding interconnections forms a hybrid FOWLP/interposer multichip package that avoids the use of expensive large 2.5D TSV interposer modules for heterogeneous integration and for chiplets. Package fabrication on reconstituted wafers or panels can follow either the chip-first or RDL-first process.

Abstract: A matrix power conversion device including a plurality of three-phase switching modules and a controller is provided. Each three-phase switching module includes a plurality of bidirectional switches connected to the input phase voltages of the three-phase input power respectively and outputs a corresponding output phase voltage of the three-phase output power. The controller determines a maximum voltage, an intermediate voltage and a minimum voltage among all the input phase voltages to acquire a waveform of a control carrier wave in a switching cycle. The controller acquires output expected values corresponding to all output phase voltages and compares them with the waveform of the control carrier wave for acquiring a turning-on time of each of the plurality of bidirectional switches. Accordingly, the controller controls the matrix power conversion device to switch the three-phase input power so as to change the three-phase output power for driving the motor.

Abstract: A salt bath for glass reinforcement, including a nitrate and a metal compound. The mass fraction of the nitrate is not less than 50%, and the nitrate is in a molten state. The metal compound is fused into the nitrate, and the metal compound contains the same metal element as the nitrate. The mass fraction of the metal element in the molecular formula corresponding to the metal compound is greater than the mass fraction in the molecular formula corresponding to the nitrate. Thus, compared with the existing salt bath, under the condition of the same mass, the salt bath can provide more effective amount of metal ions, thereby increasing the strength of glass after reinforcement, and at the same time, the lifetime of the salt bath is increased, reducing the waste of resources and environmental pollution.

Abstract: An integrated device comprising a die portion that includes a plurality of pads and a plurality of under bump metallization interconnects coupled to the plurality of pads, where the plurality of under bump metallization interconnects comprises a first under bump metallization interconnect. The integrated device includes a plurality of pillar interconnects coupled to the plurality of under bump metallization interconnects, where the plurality of pillar interconnects includes a first pillar interconnect. The first pillar interconnect includes a first width that corresponds to a widest part of the first pillar interconnect, and a second width that corresponds to a part of the first pillar interconnect that is vertically farthest away from the first under bump metallization interconnect, wherein the second width is less than the first width.

Abstract: A Deep Trench Isolation (DTI) structure is disclosed. The DTI structures according to embodiments of the present disclosure include a composite passivation layer. In some embodiments, the composite passivation layer includes a hole accumulation layer and a defect repairing layer. The defect repairing layer is disposed between the hole accumulation layer and a semiconductor substrate in which the DTI structure is formed. The defect repairing layer reduces lattice defects in the interface, thus, reducing the density of interface trap (DIT) at the interface. Reduced density of interface trap facilitates strong hole accumulation, thus increasing the flat band voltage. In some embodiments, the hole accumulation layer according to the present disclosure is enhanced by an oxidization treatment.

Abstract: A super junction power device with an adjustable gate resistance structure and a manufacturing method thereof relate to a field of manufacturing of power devices and semiconductors. The manufacturing method includes preparing a cell structure and an adjustable gate resistance structure of the super junction power device; preparing contact through holes; preparing a metal wire layer; and preparing a passivation layer. By designing an adjustable gate resistance structure, a gate resistance of the super junction power device is flexibly adjusted within a certain gate resistance range based on application requirements, further improving an application range of the super junction power device. Through adjustable gate resistance control electrodes, open-circuit control is performed on corresponding independent gate resistors to realize an adjustment of the corresponding gate resistor, There is no need to change a layout of a gate, contact holes, and metal wire layers for different gate resistance requirements.

Abstract: A virtual keyboard setting method includes: determining an operation region and a trigger region, the operation region being a region operated in a screen for using an input method, and the trigger region being a region covered by an external entity when touching the screen; determining a display region of a virtual keyboard according to the operation region; determining an area of a virtual key in the virtual keyboard according to the trigger region; and setting the virtual keyboard according to the display region of the virtual keyboard and the area of the virtual key.

Abstract: A power saving method for lower-power devices is disclosed. Unencrypted IoT packets are received from low-power sensors. An identity of a mobile device is registered and public keys are exchanged between an MQTT agent and the mobile device. An advanced encryption standard (AES) key is generated according to public and private keys of the MQTT agent and a public key of the mobile device and received IoT packets are encrypted using the AES key. The encrypted IoT packets are transmitted to an MQTT broker. The MQTT broker forward the encrypted IoT packets to the mobile device. The mobile device exchanges the AES key with the electronic device according to its own public key through the secure shell (SSH) mechanism. The mobile device decrypts the IoT packets through the AES key.

Abstract: A memory device includes a stacked structure and at least one first element structure. The stacked structure is in a memory array region and a staircase contact region. The stacked structure includes first conductive layers and a second conductive layer arranged in a longitudinal direction. The memory array region and the staircase contact region are arranged in a first lateral direction. The at least one first element structure passes through the first conductive layers and the second conductive layer along the longitudinal direction. The first conductive layers surround a sidewall surface of the at least one first element structure. The second conductive layer includes conductive portions arranged in a second lateral direction. The conductive portions are completely separated from each other by the at least one first element structure. The first lateral direction is different from the second lateral direction.

Abstract: A method for preventing a subject vehicle from driving into a vehicle ahead includes equipping the subject vehicle with at least one brake system, a drive system and a driver assistance system with an emergency braking function. The method also includes issuing a haptic warning when the subject vehicle enters a distance warning zone, applying emergency braking on entering an emergency braking zone, and calculating a relative speed between the subject vehicle and the vehicle ahead. The method includes continuously calculating a time to collision (TTC) when approaching the vehicle ahead, specifying a first TTC threshold value for adaptive classification of a distance from the subject vehicle to the vehicle ahead, checking, when approaching the vehicle ahead, whether the TTC falls below the first TTC threshold value, and, if the TTC falls below the first TTC threshold value, issuing a haptic warning to a driver of the vehicle.

Abstract: A semiconductor device includes a substrate; a gate structure, located over the substrate, the gate structure including a first gate oxide layer, a second gate oxide layer, and a silicon layer. The first gate oxide layer is over the substrate, and the first gate oxide layer has a sloped sidewall on one side and a vertical sidewall on another side. The second gate oxide layer is over the substrate and on the sloped sidewall of the first gate oxide layer, and a thickness of the second gate oxide layer is less than a thickness of the first gate oxide layer. The silicon layer is formed over the first gate oxide layer and the second gate oxide layer.

Abstract: A semiconductor structure includes: a U-metal-oxide-semiconductor field-effect transistor (UMOS) structure; and a trench junction barrier Schottky (TJBS) diode, wherein an insulating layer of a sidewall of the TJBS diode does not have a side gate.

Abstract: Disclosed is a board-writing extraction method and a related device. The board writing extraction method includes: obtaining a target object segmentation image of a writing-board image, wherein a contrast ratio between a target object and a non-target object in the target object segmentation image reaches a predetermined contrast ratio; converting, according to the target object segmentation image, a grayscale image of the writing-board image into a to-be-processed grayscale image with the board writing being highlighted; and performing binarization processing on the to-be-processed grayscale image to obtain a board-writing image of the writing-board image. The present disclosure can effectively reduce the noise in the board-writing image extracted from the writing-board image.

Abstract: Disclosed are techniques for elevator control. In an aspect, a sensor senses time series data, wherein the time series data includes at least one image, and range of the image covers a plurality of buttons. A system module configured to determine whether the image contains a target object; determine a tip coordinate of a tip of the target object when the image contains the target object, wherein the tip refers to a point of the target object with the closest distance to the operation panel; and determine button information corresponding to the tip coordinate among a plurality of button information, and transmit a control signal at least according to the button information, wherein the plurality of button information is associated with the plurality of buttons. A controller receives the control signal and perform control operation according to the control signal.