Abstract: A group-III-nitride structure and a manufacturing method thereof are provided. In the manufacturing method, one or more grooves are formed by etching a first group-III-nitride epitaxial layer with a patterned first mask layer as a mask; then a second mask layer is formed at least on one or more bottom walls of the one or more grooves, and a first epitaxial growth is performed on the first group-III-nitride epitaxial layer to laterally grow and form a second group-III-nitride epitaxial layer with the second mask layer as a mask, where the one or more grooves are filled with the second group III-nitride epitaxial layer; a second epitaxial growth is then performed on the second group-III-nitride epitaxial layer to grow and form a third group-III-nitride epitaxial layer on the second group-III-nitride epitaxial layer and the patterned first mask layer.

Abstract: A train control method, based on a combined coordinate system, includes: obtaining a target combined coordinate system corresponding to a planned train path, the target combined coordinate system comprising a plurality of basic coordinate systems with boundary logic sections, and each of the basic coordinate systems forming a physical link relationship with another basic coordinate system of the basic coordinate systems through the boundary logic sections; obtaining position information of a train located in the planned train path sent by the train, and determining preceding train information of a preceding train preceding to the train based on the position information and the physical link relationships between the basic coordinate systems; and performing a train control strategy on the train based on the preceding train information.

Abstract: A vehicle detection method includes: acquiring point cloud data of a target detection area and image information of the target detection area; in response to determining, according to the point cloud data, that there is a target vehicle in the target detection area, determining a target vehicle type of the target vehicle according to the point cloud data; determining a target vehicle identifier of the target vehicle according to the image information; and comparing the target vehicle type and the target vehicle identifier with a legitimate-vehicle information database, so as to determine whether the target vehicle is an illegitimate vehicle.

Abstract: The present disclosure provides an LED structure and a preparation method thereof. The LED structure includes: a first conductivity semiconductor layer; a stress releasing layer disposed on the first conductivity semiconductor layer, and a material of the stress releasing layer is a III-V group semiconductor material; a V-shaped layer disposed on the stress releasing layer and having V-shaped grooves, where the V-shaped grooves are formed under a control of the stress releasing layer; a multi-quantum well layer, configured to conformally cover a surface of the V-shaped layer away from the stress releasing layer; a second conductivity semiconductor layer disposed on a side of the multi-quantum well layer away from the first conductivity semiconductor layer, where a conductivity type of the second conductivity semiconductor layer is different from that of the first conductivity semiconductor layer.

Abstract: A train control method includes: acquiring a current control level of the train and outputting the current control level to a train traction control system; acquiring current train operation data and calculating an evaluation score according to the current train operation data by the train traction control system; and inputting the current train operation data and the evaluation score into a neural network learning system to adjust the current control level of the train to obtain a final outputted control level.

Abstract: Embodiments of the present invention disclose a mobility management method, user equipment, and a base station. The mobility management method may include: receiving, by the user equipment (UE) in a connected state, a source identifier of the UE from a first base station, where the source identifier is used to uniquely identify the UE in the first base station; entering, by the UE, a low-overhead state after satisfying a low-overhead activation condition; storing, by the UE in the low-overhead state, a connection context of the UE in the connected state, and camping on a cell according to a cell reselection criterion in a moving process.

Abstract: The present disclosure provides a state testing method for a rail vehicle, an on-board controller, and a zone controller.

Abstract: A mining grouting reinforcement material is provided and includes a component A including a sodium silicate solution and an amino acid salt, and a component B including an isocyanate, a plasticizer, a filler and a molecular bridging agent. A specific gravity of the filler is 2 to 8.

Abstract: The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate; and a first semiconductor layer, a first stress releasing layer, an active layer and a second semiconductor layer that are sequentially stacked on the substrate from bottom to top; where conductive types of the first semiconductor layer and the second semiconductor layer are opposite, the first stress releasing layer comprises one or more periodic structures, each of the one or more periodic structures comprises a first group III nitride and a second group III nitride, and an In component content in the first group III nitride is different from an In component content in the second group III nitride. By the semiconductor structure provided in the present disclosure, an active layer with high In component content can be epitaxial grown while ensuring high crystal quality.

Abstract: A method for constructing a multimodality-based medical large model, and a related device thereof are provided. The medical large model includes a multimodal transformer T, a prompt manager M, a dialogue engine L, a task controller H, and a multimodal foundation (MMF) that includes at least one medical foundation model (MFM). Five stages, namely modal analysis, model allocation, downstream task result feedback, modal transformation normalization, and response generation are designed.

Abstract: A method for controlling train operation, includes: receiving an instruction indicating permission to enter a train autonomous circumambulation system (TACS) control level; in response to the train satisfies a condition for entering the TACS control level, controlling the train to enter the TACS control level and transmitting a TACS control notification to a ground device in a route section in which the train is located, the ground device communicating with the train through the TACS control notification based on a TACS control level protocol; and operating the train based on the TACS control level.

Abstract: A semiconductor structure and a manufacturing method of the semiconductor structure are provided. The semiconductor structure includes an n-type semiconductor layer, a functional layer, a p-type semiconductor layer, a first AlN layer and a first heavily doped n-type semiconductor layer arranged in sequence. The first AlN layer is provided to reduce the diffusion of p-type ions from the p-type semiconductor layer into the first heavily doped n-type semiconductor layer, to avoid a thicker tunneling junction caused by n-type ions/p-type ions co-doping, to improve the tunneling effect of carriers, to enhance the uniformity of the current density distribution of the first heavily doped n-type semiconductor layer injected into the p-type semiconductor layer, to solve the problem that the p-type semiconductor layer has low carrier mobility and high resistivity.

Abstract: A semiconductor structure includes: a first semiconductor layer, a multiple quantum well layers formed on the first semiconductor layer, where the multiple quantum well layer includes a plurality of quantum barrier layers and a plurality of quantum well layers alternately arranged; an insertion layer formed on each of the plurality of quantum well layers; and a second semiconductor layer formed on the multiple quantum well layer; where a material of the insertion layer is a nitride containing a scandium component. In this application, the insertion layer, made of the nitride containing the scandium component, may repair deterioration problem of epitaxial quantum well materials. Moreover, a compressive stress on the quantum well layer located below is introduced, to achieve longer light-emitting wavelengths by using InGaN quantum well materials with a lower content of In component.

Abstract: Disclosed are a semiconductor device and a manufacturing method therefor. The semiconductor device includes an n-type layer, a multiple quantum well layer, and a p-type ion doping layer which are disposed in sequence. The p-type ion doping layer includes an activation region and a passivation region, and the activation region is an oxygen doping region. By selectively activating the p-type ion doping layer, a passivation region at an edge of a light-emitting unit and a passivation region under the first electrode are formed, so that uniformity of luminous exitance of a device may be improved, and current crosstalk in the p-type layer may be avoided without etching and filling insulating medium or cutting isolation channels between the light-emitting units, thereby simplifying a manufacturing process of the device, and achieving a more uniform luminous exitance and higher light extraction rate of the semiconductor device.

Abstract: A semiconductor structure includes a substrate, a first semiconductor layer, a second semiconductor layer and a p-type ion doping layer sequentially disposed, the p-type ion doping layer includes an activation region and a passivation region enclosing the activation region, and the activation region is an oxygen-doped region. Hydrogen doped in the p-type ion doping layer can be replaced by low-temperature annealing after a process of implementing oxygen ion-implantation, so as to improve activation efficiency of the p-type ion doping layer; the activation region in a gate electrode region and the passivation region in an non-gate electrode region are formed by using a method for selectively activating the p-type ion doping layer, avoiding etching of the p-type ion doping layer, and thus avoiding etching losses; and a plurality of patterned activation regions are obtained by selectively activating on a same substrate, which facilitates batch preparation of enhancement mode semiconductor devices.

Abstract: Disclosed in the present disclosure is an information-based intelligent quality traceability system for fresh milk, which includes a database module configured to store information of the system, a data encryption module configured to encrypt obtained information, an enterprise information module, a raw material information module, a first measurement module, a destruction information module, a transportation information module, a second measurement module, a processing information module, and a delivery information module. Each information module obtains information, a data decryption module is configured to decrypt obtained information, a vehicle condition analysis module is configured to analyze a relation between a vehicle running condition and product quality, and a data analysis module is configured to analyze the data of the system.

Abstract: Disclosed is a semiconductor structure. The semiconductor structure includes: a multiple quantum well layer including a quantum barrier layer and a quantum well layer which are alternately arranged; and a protective layer formed on the quantum well layer, where the protective layer is made of an oxygen-doped nitride material. In the present disclosure, the presence of the oxygen-doped protective layer may achieve a longer luminous wavelengths through an InGaN quantum well material with a lower In component.

Abstract: A method for preventing a turnout conflict of a railway is applicable to a railway controller and includes: receiving a first request from a first train and a second request from a second train for using a turnout within a time period; determining whether a first distance between a current position of the first train and the turnout is equal to a second distance between a current position of the second train and the turnout; and in response to determining that the first distance is equal to the second distance, determining a priority user based on first arrival information of the first train and second arrival information of the second train, where the arrival information includes whether the train arrives at a next parking station on schedule, ahead of schedule, or behind schedule when running at a maximum running speed.

Abstract: An epitaxial structure of a light-emitting device and a manufacturing method thereof are provided. The epitaxial structure of the light-emitting device includes a first semiconductor layer, an active region and a second semiconductor layer sequentially stacked; where the active region includes at least one group of a barrier layer and a quantum well layer which are stacked, a surface of the quantum well layer away from the first semiconductor layer has a first roughness, a surface of the barrier layer away from the first semiconductor layer has a second roughness, and the first roughness is greater than the second roughness.

Abstract: A manufacturing method for the LED structure, including: growing a first conductive-type semiconductor layer on a substrate; growing an active layer on the first conductive-type semiconductor layer, where the active layer includes a potential well layer, an insertion layer and a potential barrier layer that are stacked, the insertion layer includes a first insertion layer and a second insertion layer that are stacked, a quantum confinement Stark effect is generated between the first insertion layer and the potential well layer, the materials of the potential well layer, the first insertion layer and the potential barrier layer are all group III-V semiconductor materials, and the material of the second insertion layer includes Si—N bonds for repairing V-type defects of the first insertion layer; and growing a second conductive-type semiconductor layer on the active layer, where the first conductive-type semiconductor layer and the second conductive-type semiconductor layer have opposite conductivity types.