Abstract: A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.

Abstract: A semiconductor die package includes an inductor-capacitor (LC) semiconductor die that is directly bonded with a logic semiconductor die. The LC semiconductor die includes inductors and capacitors that are integrated into a single die. The inductors and capacitors of the LC semiconductor die may be electrically connected with transistors and other logic components on the logic semiconductor die to form a voltage regulator circuit of the semiconductor die package. The integration of passive components (e.g., the inductors and capacitors) of the voltage regulator circuit into a single semiconductor die reduces signal propagation distances in the voltage regulator circuit, which may increase the operating efficiency of the voltage regulator circuit, may reduce the formfactor for the semiconductor die package, may reduce parasitic capacitance and/or may reduce parasitic inductance in the voltage regulator circuit (thereby improving the performance of the voltage regulator circuit), among other examples.

Abstract: A semiconductor die including mechanical-stress-resistant bump structures is provided. The semiconductor die includes dielectric material layers embedding metal interconnect structures, a connection pad-and-via structure, and a bump structure including a bump via portion and a bonding bump portion. The entirety of a bottom surface of the bump via portion is located within an area of a horizontal top surface of a pad portion of the connection pad-and-via structure.

Abstract: An apparatus for forming a package structure is provided. The apparatus includes a processing chamber for bonding a first package component and a second package component. The apparatus also includes a bonding head disposed in the processing chamber. The bonding head includes a plurality of vacuum tubes communicating with a plurality of vacuum devices. The apparatus further includes a nozzle connected to the bonding head and configured to hold the second package component. The nozzle includes a plurality of first holes that overlap the vacuum tubes. The nozzle also includes a plurality of second holes offset from the first holes, wherein the second holes overlap at least two edges of the second package component. In addition, the apparatus includes a chuck table disposed in the processing chamber, and the chuck table is configured to hold and heat the first package component.

Abstract: A light-emitting device, including a first type semiconductor layer, a patterned insulating layer, a light-emitting layer, and a second type semiconductor layer, is provided. The patterned insulating layer covers the first type semiconductor layer and has a plurality of insulating openings. The insulating openings are separated from each other. The light-emitting layer is located in the plurality of insulating openings and covers a portion of the first type semiconductor layer. The second type semiconductor layer is located on the light-emitting layer.

Abstract: A method includes forming a first sealing layer at a first edge region of a first wafer; and bonding the first wafer to a second wafer to form a wafer stack. At a time after the bonding, the first sealing layer is between the first edge region of the first wafer and a second edge region of the second wafer, with the first edge region and the second edge region comprising bevels. An edge trimming process is then performed on the wafer stack. After the edge trimming process, the second edge region of the second wafer is at least partially removed, and a portion of the first sealing layer is left as a part of the wafer stack. An interconnect structure is formed as a part of the second wafer. The interconnect structure includes redistribution lines electrically connected to integrated circuit devices in the second wafer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes an interconnection structure over a semiconductor substrate and a conductive pillar over the interconnection structure. The conductive pillar has a protruding portion extending towards the semiconductor substrate from a lower surface of the conductive pillar. The semiconductor device structure also includes an upper conductive via between the conductive pillar and the interconnection structure and a lower conductive via between the upper conductive via and the interconnection structure. The lower conductive via is electrically connected to the conductive pillar through the upper conductive via. The conductive pillar extends across opposite sidewalls of the upper conductive via and opposite sidewalls of the lower conductive via. A top view of an entirety of the second conductive via is separated from a top view of an entirety of the protruding portion.

Abstract: Provided are a package structure and a method of forming the same. The method includes providing a first package having a plurality of first dies and a plurality of second dies therein; performing a first sawing process to cut the first package into a plurality of second packages, wherein one of the plurality of second packages comprises three first dies and one second die; and performing a second sawing process to remove the second die of the one of the plurality of second packages, so that a cut second package is formed into a polygonal structure with the number of nodes greater than or equal to 5.

Abstract: A semiconductor device according to embodiments of the present disclosure includes a first die including a first bonding layer and a second die including a second hybrid bonding layer. The first bonding layer includes a first dielectric layer and a first metal coil embedded in the first dielectric layer. The second bonding layer includes a second dielectric layer and a second metal coil embedded in the second dielectric layer. The second hybrid bonding layer is bonded to the first hybrid bonding layer such that the first dielectric layer is bonded to the second dielectric layer and the first metal coil is bonded to the second metal coil.

Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.

Abstract: A touch device includes a touch panel, a circuit board, a vibrating unit and a pressure detection module. The touch panel includes two press regions. When different press regions of the touch panel are pressed by the user, the vibration feedback values generated by different press regions are different.

Abstract: An information browsing method includes: partitioning contents of a page into a plurality of first data partitions by analyzing the contents of the page; assigning a plurality of first identifiers to the first data partitions, respectively; driving a display screen according to at least the first data partitions; and when receiving a partition selection input, determining a selected first data partition according to a first identifier corresponding to the partition selection input, wherein the selected first data partition is assigned with the first identifier.

Abstract: An information browsing method includes: partitioning contents of a page into a plurality of first data partitions by analyzing the contents of the page; assigning a plurality of first identifiers to the first data partitions, respectively; driving a display screen according to at least the first data partitions; and when receiving a partition selection input, determining a selected first data partition according to a first identifier corresponding to the partition selection input, wherein the selected first data partition is assigned with the first identifier.

Abstract: A data processing system for processing digital data with a low density parity check (LDPC) matrix includes: a storage device for storing a plurality of indices representing a plurality of shifting numbers, where the LDPC matrix comprises an array of elements, and at least one element of the LDPC matrix represents a cyclic permutation matrix that is produced by cyclically shifting columns of an identity matrix to the right according to one of the shifting numbers; and a processing circuit, coupled to the storage device, for retrieving at least one index to recover at least one element of the LDPC matrix according to the index and performing data processing according to the LDPC matrix.

Abstract: A method for encoding digital data with a low-density parity check (LDPC) matrix includes: indirectly storing a non-regular portion of the LDPC matrix by storing a plurality of indices corresponding to a plurality of non-zero sub-matrices of the non-regular portion, and by storing a plurality of distance/location parameters respectively corresponding to numbers of zero sub-matrices between adjacent non-zero sub-matrices of the non-regular portion or respectively corresponding to distances between adjacent non-zero sub-matrices of the non-regular portion; generating at least one address according to at least one distance/location parameter; accessing information bits corresponding to the address; and recovering at least one element of the LDPC matrix according to at least one index and the information bits to encode the digital data according to the LDPC matrix.

Abstract: A nozzle and a furnace having the same are provided. The furnace has a high vacuum fitting used to assemble the nozzle to the furnace. The nozzle includes a first tube part and a second tube part connecting to the first tube part. In addition, an immobilization device is disposed on a surface of the first tube part. The immobilization device is corresponding to an o-ring of the high vacuum fitting and sheathed by the o-ring to steadily immobilize the nozzle to the furnace.

Abstract: A method for encoding digital data with a low-density parity check (LDPC) matrix includes: indirectly storing a non-regular portion of the LDPC matrix by storing a plurality of indices corresponding to a plurality of non-zero sub-matrices of the non-regular portion, and by storing a plurality of distance/location parameters respectively corresponding to numbers of zero sub-matrices between adjacent non-zero sub-matrices of the non-regular portion or respectively corresponding to distances between adjacent non-zero sub-matrices of the non-regular portion; generating at least one address according to at least one distance/location parameter; accessing information bits corresponding to the address; and recovering at least one element of the LDPC matrix according to at least one index and the information bits to encode the digital data according to the LDPC matrix.

Abstract: The invention relates to the processor for performing convolution interleaving/de-interleaving on data symbols on plural original data symbols and convolution de-interleaving on the convolution interleaved data symbols. The processor for performing convolution interleaving on data symbol comprises a memory, an original address generator, and a storage address generator which generates an original address. The storage address generator generates the storage address of each of the stored plural data symbols in the memory according to the original address and a first predetermined sequence, and each of the convolution interleaved data symbols is stored in the memory according to the storage address; furthermore, all stored data symbols in the memory are configured into a circular structure.

Abstract: A data processing system for processing digital data with a low density parity check (LDPC) matrix includes: a storage device for storing a plurality of indices representing a plurality of shifting numbers, where the LDPC matrix comprises an array of elements, and at least one element of the LDPC matrix represents a cyclic permutation matrix that is produced by cyclically shifting columns of an identity matrix to the right according to one of the shifting numbers; and a processing circuit, coupled to the storage device, for retrieving at least one index to recover at least one element of the LDPC matrix according to the index and performing data processing according to the LDPC matrix.

Abstract: The invention relates to the processor for performing convolution interleaving/de-interleaving on data symbols on plural original data symbols and convolution de-interleaving on the convolution interleaved data symbols. The processor for performing convolution interleaving on data symbol comprises a memory, an original address generator, and a storage address generator which generates an original address. The storage address generator generates the storage address of each of the stored plural data symbols in the memory according to the original address and a first predetermined sequence, and each of the convolution interleaved data symbols is stored in the memory according to the storage address; furthermore, all stored data symbols in the memory are configured into a circular structure.