Abstract: A touch display panel including a first substrate, a second substrate, a light shielding pattern layer, a touch sensing layer and a display medium is provided. The light shielding pattern layer is disposed on the first substrate or the second substrate. Pixel units are defined by the light shielding pattern layer, each pixel unit has a pixel edge length, and each pixel unit is disposed corresponding to one of the pixel structures. The touch sensing layer is disposed on the second substrate and has a plurality of first touch series and a plurality of second touch series. Each first touch series and each touch series respectively have mesh touch pads serially connected to each other. Each mesh touch pad has a plurality of grid patterns, each grid pattern has a grid edge length, and the grid edge length is ?˜? of the pixel edge length.

Abstract: A touch display device is provided. The touch display device includes a touch panel, a display panel, an anti-splinted film and a transparent conductive layer. The anti-splinted film is disposed between the touch panel and the display panel. The transparent conductive layer is disposed between the display panel and the anti-splinted film.

Abstract: A flexible liquid crystal display panel and method for manufacturing the same are provided. The flexible liquid crystal display panel includes a rigid substrate, a flexible substrate and a liquid crystal layer disposed therebetween.

Abstract: A touch panel includes an insulating base, a plurality of first sensing electrodes, a plurality of second sensing electrodes and a plurality of third sensing electrodes. The insulating base has a first surface and a second surface. The first sensing electrodes and the second sensing electrodes are disposed on the first surface of the insulating base, and electrically isolated from each other. The third sensing electrodes are disposed on the second surface of the insulating base, and each third sensing electrode at least partially overlaps a portion of the first sensing electrodes and a portion of the second sensing electrodes.

Abstract: A nitride semiconductor substrate and a method for manufacturing the same are provided. The nitride semiconductor substrate includes an epitaxy substrate, a nitride pillar layer, a nitride semiconductor layer, and a mask layer. The nitride pillar layer includes a plurality of first patterned arranged pillars and a plurality of second patterned arranged pillars. The nitride pillar layer is formed on the epitaxy substrate. A width of a cross-section of each of the second patterned arranged pillars is smaller than a width of a cross-section of each of the first patterned arranged pillars, and a distance among each of the second patterned arranged pillars is longer than a distance among each of the first patterned arranged pillars. Surfaces of the epitaxy substrate, the first patterned arranged pillars, and the second patterned arranged pillars are covered by the mask layer. The nitride semiconductor layer is formed on the nitride pillar layer.

Abstract: A nitride semiconductor substrate includes an epitaxy substrate, a patterned nitride semiconductor pillar layer, a nitride semiconductor layer, and a mask layer is provided. The nitride semiconductor pillar layer includes a plurality of first patterned arranged hollow structures and a plurality of second patterned arranged hollow structures formed among the first patterned arranged hollow structures. The second patterned arranged hollow structures have nano dimensions. The nitride semiconductor pillar layer is formed on the epitaxy substrate, and the nitride semiconductor layer is formed on the nitride semiconductor pillar layer. The mask layer covers surfaces of the nitride semiconductor pillar layer and the epitaxy substrate.

Abstract: A method of manufacturing a light emitting diode element is provided. A first patterned semi-conductor layer, a patterned light emitting layer, and a second patterned semi-conductor layer are sequentially formed on an epitaxy substrate so as to form a plurality of epitaxy structures, wherein the first patterned semi-conductor layer has a thinner portion in a non-epitaxy area outside the epitaxy structures. A passivation layer covering the epitaxy structures and the thinner portion is formed. The passivation layer covering on the thinner portion is partially removed to form a patterned passivation layer. A patterned reflector is formed directly on each of the epitaxy structures. The epitaxy structures are bonded to a carrier substrate. A lift-off process is performed to separate the epitaxy structures from the epitaxy substrate. An electrode is formed on each of the epitaxy structures far from the patterned reflector.

Abstract: A light emitting device and a method of fabricating a light emitting device are provided. The light emitting device includes a carrier substrate, at least one epitaxy structure, a high resistant ring wall, a first electrode, and a second electrode. The epitaxy structure is disposed on the carrier substrate and includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence. The first semiconductor layer is relatively away from the carrier substrate and the second semiconductor layer is relatively close to the carrier substrate. The high resistant ring wall surrounds the epitaxy structure and a width of the high resistant ring wall is greater than 5 ?m. The first electrode is disposed between the carrier substrate and the epitaxy structure. The second electrode is disposed at a side of the epitaxy structure away from the carrier substrate.

Abstract: A touch display panel contains a display panel and a touch sensing array. The touch sensing array is disposed on the display panel, wherein the touch sensing array includes a plurality of first transparent sensing series, a plurality of second transparent sensing series, and a plurality of conductive repair marks. The first transparent sensing series are arranged along a first direction. Each of the first transparent sensing series includes a plurality of first transparent sensing pads electrically connected with each other; the second transparent sensing series are arranged along a second direction. Each of the second transparent sensing series includes a plurality of second transparent sensing pads electrically connected with each other, and each first transparent sensing pad is isolated from each second transparent sensing pad. The conductive repair marks are disposed corresponding to the first transparent sensing pads or the second transparent sensing pads.

Abstract: A capacitive touch display panel includes a display panel, a touch sensing unit, and a plurality of floating gate type ESD protection devices. The touch sensing unit includes a plurality of first sensing pads and second sensing pads. Each floating gate type ESD protection device is disposed between two adjacent first sensing pads and between two adjacent second sensing pads. The two adjacent first sensing pads are electrically disconnected from each other, and the two adjacent second sensing pads are electrically disconnected from each other.

Abstract: A capacitive touch display panel includes a display panel, a touch sensing unit, and a plurality of diode ESD protection devices. The touch sensing unit includes a plurality of first sensing pads and second sensing pads. Each diode ESD protection device is disposed between two adjacent first sensing pads and between two adjacent second sensing pads. The two adjacent first sensing pads are electrically disconnected from each other, and the two adjacent second sensing pads are electrically disconnected from each other.

Abstract: A touch display panel including a first substrate, a second substrate, a light shielding pattern layer, a touch sensing layer and a display medium is provided. The light shielding pattern layer is disposed on the first substrate or the second substrate. Pixel units are defined by the light shielding pattern layer, each pixel unit has a pixel edge length, and each pixel unit is disposed corresponding to one of the pixel structures. The touch sensing layer is disposed on the second substrate and has a plurality of first touch series and a plurality of second touch series. Each first touch series and each touch series respectively have mesh touch pads serially connected to each other. Each mesh touch pad has a plurality of grid patterns, each grid pattern has a grid edge length, and the grid edge length is ?˜? of the pixel edge length.

Abstract: A pixel array including scan lines, data lines and pixels is provided. The data lines and the scan lines are intersected so as to define sub-pixel regions arranged in array. Each pixel is disposed in a pixel region including (m×n) sub-pixel regions, wherein m is a positive integral and n is a positive integral larger than one. Each pixel includes a plurality of sub-pixels, wherein each sub-pixel includes an active device, a pixel electrode and a storage capacitor. At least a portion of the storage capacitors of the sub-pixels within the same pixel is concentrically disposed in one of the sub-pixel regions.

Abstract: A method of manufacturing a light emitting diode element is provided. A first patterned semi-conductor layer, a patterned light emitting layer, and a second patterned semi-conductor layer are sequentially formed on an epitaxy substrate so as to form a plurality of epitaxy structures, wherein the first patterned semi-conductor layer has a thinner portion in a non-epitaxy area outside the epitaxy structures. A passivation layer covering the epitaxy structures and the thinner portion is formed. The passivation layer covering on the thinner portion is partially removed to form a patterned passivation layer. A patterned reflector is formed directly on each of the epitaxy structures. The epitaxy structures are bonded to a carrier substrate. A lift-off process is performed to separate the epitaxy structures from the epitaxy substrate. An electrode is formed on each of the epitaxy structures far from the patterned reflector.

Abstract: A nitride semiconductor substrate and a method for manufacturing the same are provided. The nitride semiconductor substrate includes an epitaxy substrate, a nitride pillar layer, a nitride semiconductor layer, and a mask layer. The nitride pillar layer includes a plurality of first patterned arranged pillars and a plurality of second patterned arranged pillars. The nitride pillar layer is formed on the epitaxy substrate. A width of a cross-section of each of the second patterned arranged pillars is smaller than a width of a cross-section of each of the first patterned arranged pillars, and a distance among each of the second patterned arranged pillars is longer than a distance among each of the first patterned arranged pillars. Surfaces of the epitaxy substrate, the first patterned arranged pillars, and the second patterned arranged pillars are covered by the mask layer. The nitride semiconductor layer is formed on the nitride pillar layer.

Abstract: A flexible liquid crystal display panel and method for manufacturing the same are provided. The flexible liquid crystal display panel includes a rigid substrate, a flexible substrate and a liquid crystal layer disposed therebetween.

Abstract: A method for manufacturing a liquid crystal display device is disclosed, comprising the following steps: (a) providing a substrate having a transparent electrode layer and a first metal layer, wherein the transparent electrode layer is sandwiched in between the first metal layer and the substrate; (b) defining a patterned area having a thin film diode area and a pixel area by a first mask; (c) forming a first insulating layer and a second metal layer on the patterned area having the thin film diode area and the pixel area in sequence, wherein the first insulating layer is sandwiched in between the second metal layer and the first metal layer; and (d) defining the thin film diode area and the pixel area by a second mask, and removing the second metal layer, the first insulating layer, and the first metal layer on the pixel area to expose the transparent electrode layer.

Abstract: A dual view display structure and a method for producing the same are provided. First, a display panel is provided. Then, a patterned barrier layer is formed on a transparent substrate. The transparent substrate with the patterned barrier layer is attached to the display panel. Because there is a gap between the display panel and the patterned barrier layer, a liquid transparent material is injected into the gap to form a transparent material layer to fill the gap. The invention can not only increase the viewing angles of the dual view display, but also increase the production yield.

Abstract: A method for manufacturing a liquid crystal display device is disclosed, comprising the following steps: (a) providing a substrate having a transparent electrode layer and a first metal layer, wherein the transparent electrode layer is sandwiched in between the first metal layer and the substrate; (b) defining a patterned area having a thin film diode area and a pixel area by a first mask; (c) forming a first insulating layer and a second metal layer on the patterned area having the thin film diode area and the pixel area in sequence, wherein the first insulating layer is sandwiched in between the second metal layer and the first metal layer; and (d) defining the thin film diode area and the pixel area by a second mask, and removing the second metal layer, the first insulating layer, and the first metal layer on the pixel area to expose the transparent electrode layer.