Abstract: A bonded assembly may be formed by: disposing a packaging substrate having substrate-side bonding structures over a transparent plate; heating the packaging substrate using radiative heating in which a radiative heating source provides radiation to a bottom surface of the packaging substrate through the transparent plate; attaching a semiconductor die having die-side bonding structures to a bottom of a thermocompressive bonding head; bringing the semiconductor die and the packaging substrate to indirect contact with each other with an array of solder material portions therebetween; and bonding the semiconductor die to the packaging substrate by reflowing and solidifying the solder material portions.

Abstract: A micro light-emitting diode package structure and a forming method thereof are provided. The micro light-emitting diode package structure includes micro light-emitting diode dies, a light-transmitting layer, a first insulating layer, redistribution layers, and conductive elements. The micro light-emitting diode dies are disposed side by side and each includes an electrode surface, a light-emitting surface, and side surfaces. The electrode surface and the light-emitting surface are opposite to each other, and the side surfaces are between them. The light-transmitting layer covers the light-emitting surface and the side surfaces. The first insulating layer is under the micro light-emitting diode dies and in direct contact with the electrode surface. The redistribution layers are disposed under the first insulating layer and pass through the first insulating layer to electrically connect the electrode surface.

Abstract: A position-adjustable probing device comprises a stationary probe comprising a first coaxial structure having a first needle core, a first dielectric layer, and a first exterior conductive layer, and a first and a second movable probes. The first movable probe arranged at a first side of the stationary probe comprises a ground needle core, and a first extending structure comprising a first planar structure electrically contacted with the stationary probe through a first movement, a first top surface and a first bottom surface. The second movable probe arranged at a second side of the stationary needle comprises a second coaxial structure comprising a second needle core, a second dielectric layer, and a second exterior conductive layer, and a second extending structure comprising a second planar structure electrically contacted with the stationary probe through a second movement, a second top surface, and a second bottom surface.

Abstract: A sheetless backlight module and a light guide plate thereof are provided. The light guide plate includes a body and a plurality of light scattering units. The body has a bottom and a plurality of microstructures formed on the bottom and recessed in the body from the bottom. The pluralities of light scattering units are disposed in a plurality of spaces formed due to the plurality of microstructures recessed in the body. A manufacturing method of the light guide plate mentioned above includes forming the plurality of microstructures on the bottom of the body; preparing a fluid solution containing at least a diffusive reflective material; distributing the fluid solution on the bottom; driving the fluid solution to flow into the microstructures; removing the part of the fluid solution outside the microstructures; and solidifying the fluid solution to form the plurality of light scattering units.

Abstract: A sheetless backlight module and a light guide plate thereof are provided. The light guide plate includes a body and a plurality of light scattering units. The body has a bottom and a plurality of microstructures formed on the bottom and recessed in the body from the bottom. The pluralities of light scattering units are disposed in a plurality of spaces formed due to the plurality of microstructures recessed in the body. A manufacturing method of the light guide plate mentioned above includes forming the plurality of microstructures on the bottom of the body; preparing a fluid solution containing at least a diffusive reflective material; distributing the fluid solution on the bottom; driving the fluid solution to flow into the microstructures; removing the part of the fluid solution outside the microstructures; and solidifying the fluid solution to form the plurality of light scattering units.

Abstract: A sheetless backlight module and a light guide plate thereof are provided. The light guide plate includes a body and a plurality of light scattering units. The body has a bottom and a plurality of microstructures formed on the bottom and recessed in the body from the bottom. The pluralities of light scattering units are disposed in a plurality of spaces formed due to the plurality of microstructures recessed in the body. A manufacturing method of the light guide plate mentioned above includes forming the plurality of microstructures on the bottom of the body; preparing a fluid solution containing at least a diffusive reflective material; distributing the fluid solution on the bottom; driving the fluid solution to flow into the microstructures; removing the part of the fluid solution outside the microstructures; and solidifying the fluid solution to form the plurality of light scattering units.

Abstract: The invention discloses a red phosphor powder which is based on strontium (Sr) aluminate and using europium (Eu) as exciting agent, and is characterized by that its chemical equivalence formula is (SrO)4(?Me+2O)1Al2O3: Eu, wherein Me+2=Mg and/or Ca and/or Ba. The present invention also discloses a manufacturing process for the red phosphor powder and a warm white light-emitting diode employing the phosphor powder. Moreover, the present invention also discloses a multi-layer polyethylene thin film using the red phosphor powder.

Abstract: The invention relates to a halide phosphor powder for warm-white light emitting diode, which is a kind of low-color-temperature phosphor powder of halide nitride based on garnet of rare earth oxides, uses cerium as activating agent and is characterized in that chloride (Cl?1) and nitrogen ion (N?3) are added to the composition of the phosphor powder and its stoichiometric relationship of the composition is (?Ln+3)3Al2[(Al(O1-2pClpNp)4]3, wherein ?Ln is ?Ln=Y and/or Gd and/or Tb and/or Lu and/or Dy and/or Pr and/or Ce. In addition, the invention also discloses a use of a warm-white light emitting diode of the said phosphor powder with a weight ratio of 8 to 75%. The light emitting diode has a warm-red color temperature T?3000 K when it has a power of 1 watt.

Abstract: The present invention discloses an orange phosphor powder having a rare-earth aluminate have garnet structure, which is characterized by that its chemical composition is added with compounds of the IV and V groups elements and the stoichiometry formula of the orange phosphor powder is (?Ln)3-xMeIVxAl5-ySiyO12-(x+y)N(x+y). Furthermore, the present invention also discloses a warm-white Light-emitting diode employing the orange phosphor powder.

Abstract: The present invention discloses a solar cell which can enhance the absorption of the short-wavelength range radiation ?<400 nm of the sun and re-radiate in the wavelength range ?=500˜780 nm to enhance the solar cell's capability in absorbing more long-wavelength radiation and form separate electron-hole pairs so as to increase the output power of the solar cell assembly. Furthermore, the present invention also provides a transparent light conversion film for solar cells.

Abstract: A high-brightness yellow-orange yellow phosphor for use in warm white LED (light emitting diode), the high-brightness yellow-orange yellow phosphor comprises a substrate based on a rare-earth garnet and cerium for activating said substrate. The high-brightness yellow-orange yellow phosphor has the substances of Li+1, Mg+2 and N?3 contained therein so that the overall stoichiometric equation of the substrate is: ?(Ln)3Al5?xLi(x+y)Mg(x+y)O12?3yN3y and, the high-brightness yellow-orange yellow phosphor radiates in a visible orange yellow band at ?=538˜569 nm when activated by a shortwave light from an InGaN semiconductor heterostructure.

Abstract: The present invention discloses a warm-white-light emitting diode has the substrate of indium gallium nitride (InGaN) heterojunction containing a large amount of quantum wells and having a light conversion polymer layer, characterized by that the light conversion polymer layer is uniform in concentration, the light-emitting surface and edges of the indium gallium nitride heterojunction are covered with a thermosetting polymer, and the light conversion polymer layer contains some fluorescent powders, which are formed as at least two particle layers in the light conversion polymer layer to ensure the light transmitted reaching 20% of the first-order blue light and 70˜80% of the second-order orange-yellow light from the indium gallium nitride heterojunction. The present invention also discloses a fluorescent powder.

Abstract: A blue-green-red three-band phosphor for multilayer agricultural plastic film for converting near ultraviolet light in photosynthetic active radiation is disclosed. The substrate of the phosphor is prepared from the group IIA element SiO44?, having a total stoichiometric equation (?Me+2O)2?(SiO2)?, in which ?=1, 2, 3, ?Me+2=Ba+2 and/or Sr+2 and/or Ca+2 and/or Mg+2, having an orthorhombic crystal architecture, and generating a three-band spectrum when activated by d-f element selected from the group of Eu+2, Mn+2 and Sm+2. The maximum wavelength of the three-band spectrum is ?1=440˜460 nm, ?2=515˜535 nm and ?3=626˜640 nm. The maximum value and halfwave width of every spectrum are determined subject to the concentration of the activator and the phosphor synthesis technology. The three-band phosphor is prepared through a solid synthesis method in the form of high dispersed ultrafine powder having the average grain size of d?0.8 ?m.

Abstract: The present invention discloses a white light-emitting diode based on In—Ga—N nitride heterojunction is characterized by that the light-emitting diode has primary blue light emission of a specific wavelength and a light conversion layer so as to generate white light. Further, the present invention also discloses a light conversion layer and its fluorine oxygen garnet phosphor powder.

Abstract: An inorganic powder uses a UV solid light source applied for the UV LEDs, in which an inorganic powder is based on the inorganic powder of n-silicate group II elements, and its ingredients have valence 2 ions, such as Eu+2, Sm+2, Yb+2 and Dy+2, valence 3 ions Ce+3, Tb+3 and/or Eu+3. The chemical formula of the components is Me+21-xLn+32-ySi2O8:TR+2x:TR+3y, and x=0.0-0.2, y=0.0-0.1. A main structure thereof is a hexagonal crystal structure. When the indium gallium nitride and gallium nitride based allomorphous semiconductor short wave UV light is used under conditions of excitement, the multiple band white light can be obtained.

Abstract: A phosphor providing orange-yellow radiation is prepared from a cerium activated rare-earth garnet substrate that contains Li (lithium), Si (silicon), N (nitrogen) and F (fluorine) atoms, obtaining the overall stoichiometric equation of (?Ln)3Al5-x-yLiy/3Mgx/2Si(x/2+2y/3)Fq/2O12-qNq/2. When the activating wavelength is 440˜475 nm, the orange sub-energy band becomes 542˜590 nm, and the radiation quatum ouput q>0.9, showing a cubic crystal garnet structure. The phosphor has color coordinate ?(x+y)?0.89, and color purity ??0.89. The invention also provides a warm white LED that has light intensity J?300 cd, half open angle 2??60°, luminous efficiency 65???100 lm/W, and color temperature within 2800?T?5500K.

Abstract: The present invention relates to a red light phosphor, which is based on sulfide and activating agent containing rare earth strontium or hafnium. It is characterized by that the aforementioned materials are a fluorine-sulfur oxide containing lanthanum-yttrium-zirconium and/or hafnium with its stoichiometric formula as (La1-x-y-zYxAyMez+4O)2S1(F?1)2z, and activating agent based on A=(TR+3=? Eu, Sm, Gd, Tb)+(TR+4?Pr+4), in which Me+4=Zr+4 and/or Hf+4. Compared with standard materials, the luminous intensity of the phosphor according to the present invention is increased to 1.6-2.4 times. Further, the red light phosphor according to the present invention has a mean diameter of d50?0.6 ?m. The present invention also discloses a multilayer photo-transforming film, in which the three-layer agro-film is filled with phosphor. The agro-film is based on polythene and its derivatives and added with photostabilizer.

Abstract: A fluorescent powder using YAG (yttrium aluminum garnet) as the substrate and cerium as the excitant, and having added thereto Tb (terbium) ions, Ga (gallium) ions, Yb (ytterbium) ions and Lu (lutetium) ions. The YAG (yttrium aluminum garnet) has the chemical formula of (Y1-x-y-z-p-qGdxTbyYbzLupCeq)3Al5O12. The invention also provides an organic film layer using the fluorescent powder, and a LED using the organic film layer.

Abstract: A silicon-based photovoltaic cell is disclosed having a red light conversion layer that absorbs ultraviolet rays, blue-purple or yellow-green light of the Sun's solar radiation and converts the absorption into a red, dark red and near infrared subband radiation. The maximum value of the solar radiation absorbed by the red light conversion layer is ?=470˜490 nm, and the maximum value of the photoluminescent spectrum of the red light conversion layer is within the photosensitive spectral zone of said single-crystal silicon substrate ?=700˜900 nm, i.e., in conformity with the optimal sensitivity area of silicon-based solar cells. The red light conversion layer has filled therein an ethyl acetoacetate or polycarbonate-based light-transmissive polymer that has evenly distributed therein a phosphor composed of ?-Al2O3—Ti2O3, having a quantum efficiency of 90%.

Abstract: A silicate phosphor prepared from Mg2Me+20.5Ln3Si2.5O12-2yN?3yF?1y, in which Me+2=Ca, Sr, Ba, Ln=Sc, Lu, Er, Ho, excited by one single ion or an ion pair of d, f-elements such as Ak+n=Cu+1, Ce+3, Eu+2, Ag+1, Mn+2. The phosphor has a cubic garnet architecture prepared by solid phase synthesis, and radiates at green, green-yellow, yellow-orange spectrum regions. When mixed with (Y,Gd,Ce)3Al5O12 substrate-based phosphor, the compound mixture has warm white radiation and color temperature T<4000K with high luminous intensity and high luminescence efficiency. The invention also provides a warm white semiconductor using the silicate phosphor.