Patents by Inventor Wei-Jer Sung

Wei-Jer Sung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bipolar transistors with vertical structures
    Patent number: 7595249
    Abstract: A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: September 29, 2009
    Assignee: Alcatel-Lucent USA Inc.
    Inventors: Young-Kai Chen, Lay-Lay Chua, Vincent Etienne Houtsma, Rose Fasano Kopf, Andreas Leven, Chun-Ting Liu, Wei-Jer Sung, Yang Yang
  • Flat profile structures for bipolar transistors
    Patent number: 7541624
    Abstract: A method for fabricating a bipolar transistor includes forming collector, base, and emitter semiconductor layers on a substrate such that the layers form a vertical sequence with respect to an adjacent surface of the substrate. The method includes etching away a portion of a top one of the semiconductor layers to expose a portion of the base semiconductor layer and then, growing semiconductor on the exposed portion of the base layer. The top one of the semiconductor layers is the layer of the sequence that is located farthest from the substrate. The growing causes grown semiconductor to laterally surround a vertical portion of the top one of the semiconductor layers.
    Type: Grant
    Filed: July 21, 2003
    Date of Patent: June 2, 2009
    Assignee: Alcatel-Lucent USA Inc.
    Inventors: Young-Kai Chen, Rose Fasano Kopf, Wei-Jer Sung, Nils Guenter Weimann
  • Bipolar transistors with vertical structures
    Publication number: 20090029536
    Abstract: A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
    Type: Application
    Filed: September 29, 2008
    Publication date: January 29, 2009
    Inventors: Young-Kai Chen, Lay-Lay Chua, Vincent Etienne Houtsma, Rose Fasano Kopf, Andreas Leven, Chun-Ting Liu, Wei-Jer Sung, Yang Yang
  • Bipolar transistors with vertical structures
    Publication number: 20050156195
    Abstract: A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
    Type: Application
    Filed: March 14, 2005
    Publication date: July 21, 2005
    Inventors: Young-Kai Chen, Lay-Lay Chua, Vincent Houtsma, Rose Kopf, Andreas Leven, Chun-Ting Liu, Wei-Jer Sung, Yang Yang
  • Bipolar transistors with vertical structures
    Patent number: 6911716
    Abstract: A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
    Type: Grant
    Filed: September 13, 2002
    Date of Patent: June 28, 2005
    Assignee: Lucent Technologies, Inc.
    Inventors: Young-Kai Chen, Lay-Lay Chua, Vincent Etienne Houtsma, Rose Fasano Kopf, Andreas Leven, Chun-Ting Liu, Wei-Jer Sung, Yang Yang
  • Flat profile structures for bipolar transistors
    Publication number: 20050032323
    Abstract: A method for fabricating a bipolar transistor includes forming collector, base, and emitter semiconductor layers on a substrate such that the layers form a vertical sequence with respect to an adjacent surface of the substrate. The method includes etching away a portion of a top one of the semiconductor layers to expose a portion of the base semiconductor layer and then, growing semiconductor on the exposed portion of the base layer. The top one of the semiconductor layers is the layer of the sequence that is located farthest from the substrate. The growing causes grown semiconductor to laterally surround a vertical portion of the top one of the semiconductor layers.
    Type: Application
    Filed: July 21, 2003
    Publication date: February 10, 2005
    Inventors: Young-Kai Chen, Rose Kopf, Wei-Jer Sung, Nils Weimann
  • Bipolar transistors with vertical structures
    Publication number: 20040046182
    Abstract: A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
    Type: Application
    Filed: September 13, 2002
    Publication date: March 11, 2004
    Inventors: Young-Kai Chen, Lay-Lay Chua, Vincent Etienne Houtsma, Rose Fasano Kopf, Andreas Leven, Chun-Ting Liu, Wei-Jer Sung, Yang Yang