Patents by Inventor Wei Ji Song

Wei Ji Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making an opening for electrical contact by etch back profile control
    Patent number: 7655561
    Abstract: A method and apparatus for etchback profile control. The method includes performing a first etch through a first dielectric layer to form a first via and a second dielectric layer, filling the first via with a BARC material to form a first BARC layer, and performing a second etch on the first BARC layer to form a second BARC layer. The second etch has a first etch rate in a first peripheral region of the second BARC layer and a second etch rate in a first central region of the second BARC layer. The first peripheral region is located around a sidewall of the first via, and the first central region is located around a center of the first via. The first etch rate is larger than the second etch rate, and the first peripheral region is located higher than the first central region. A first top surface of the second BARC layer has substantially a first convex shape. Additionally, the method includes performing a third etch through a second dielectric layer to form a trench and a third BARC layer.
    Type: Grant
    Filed: July 31, 2006
    Date of Patent: February 2, 2010
    Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Han Ming Wu, Eric Kuang, Wei Ji Song
  • Method for making an opening for electrical contact by etch back profile control
    Patent number: 7084054
    Abstract: A method and apparatus for etchback profile control. The method includes performing a first etch through a first dielectric layer to form a first via and a second dielectric layer, filling the first via with a BARC material to form a first BARC layer, and performing a second etch on the first BARC layer to form a second BARC layer. The second etch has a first etch rate in a first peripheral region of the second BARC layer and a second etch rate in a first central region of the second BARC layer. The first peripheral region is located around a sidewall of the first via, and the first central region is located around a center of the first via. The first etch rate is larger than the second etch rate, and the first peripheral region is located higher than the first central region. A first top surface of the second BARC layer has substantially a first convex shape. Additionally, the method includes performing a third etch through a second dielectric layer to form a trench and a third BARC layer.
    Type: Grant
    Filed: February 6, 2004
    Date of Patent: August 1, 2006
    Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Han Ming Wu, Eric Kuang, Wei Ji Song