Patents by Inventor Wei-Jian Liao

Wei-Jian Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7124810
    Abstract: A heat pipe (20) includes a pipe (21), a wick (22) formed on an inner wall (23) of the pipe, and a working fluid (not shown) sealed in the pipe and soaked in the wick. The wick is formed by sintering nano-size metal powder disposed inside the pipe. First through holes (25) are defined in the wick in an evaporator section (20a) of the heat pipe. A central one of the first through holes is aligned along an axis 20c of the heat pipe, and other first through holes are parallel to the axis 20c. A second through hole (26) is defined in the wick in a condenser section (20b) of the heat pipe. The second through hole communicates with the first through holes, whereby the working fluid flows through the first and second through holes. These characteristics give the wick low thermal resistance, a high evaporator surface area, and high capillary force.
    Type: Grant
    Filed: April 15, 2005
    Date of Patent: October 24, 2006
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventors: Hsin-Ho Lee, Wei-Jian Liao
  • Publication number: 20060141751
    Abstract: A method for forming silicon dioxide layer on a silicon substrate by anodic oxidation includes: providing a silicon substrate which has a polished face; providing an anodic oxidation apparatus which is filled with an electrolyte; providing a platinum piece and placing the platinum piece in the electrolyte as a cathode; placing the silicon substrate in the electrolyte as an anode with the polished surface of the silicon substrate facing to the cathode; applying a direct current to the cathode and the anode and irradiating the electrolyte with ultraviolet light for a predetermined period of time; taking out the silicon substrate and getting a finished silicon dioxide layer formed on the silicon substrate after cleaning, drying and cooling. The method can increase the reaction rate, and the silicon dioxide layer so formed has a uniform thickness and high purity.
    Type: Application
    Filed: December 14, 2005
    Publication date: June 29, 2006
    Applicant: HON HAI Precision Industry CO., LTD.
    Inventors: Wei-Jian Liao, Hsin-Ho Lee
  • Publication number: 20060016580
    Abstract: A heat pipe (20) includes a pipe (21), a wick (22) formed on an inner wall (23) of the pipe, and a working fluid (not shown) sealed in the pipe and soaked in the wick. The wick is formed by sintering nano-size metal powder disposed inside the pipe. First through holes (25) are defined in the wick in an evaporator section (20a) of the heat pipe. A central one of the first through holes is aligned along an axis 20c of the heat pipe, and other first through holes are parallel to the axis 20c. A second through hole (26) is defined in the wick in a condenser section (20b) of the heat pipe. The second through hole communicates with the first through holes, whereby the working fluid flows through the first and second through holes. These characteristics give the wick low thermal resistance, a high evaporator surface area, and high capillary force.
    Type: Application
    Filed: April 15, 2005
    Publication date: January 26, 2006
    Applicant: HON HAI Precision Industry CO., LTD.
    Inventors: Hsin-Ho Lee, Wei-Jian Liao