Abstract: A memory array for computing-in-memory (CIM) is disclosed. The memory array for CIM includes a bit cell array, at least one word line and at least one bit line. The bit cell array has a plurality of bit cells, wherein each bit cell is operated at an operating voltage. The at least one word line is electrically connected to the bit cell array, wherein the at least one word line is associated with a first parameter. The at least one bit line is electrically connected to the bit cell array, wherein the bit cells extend along a specific direction, each the at least one bit line has an electrical parameter associated therewith, each the bit cell is associated with a second parameter, a first quantity of the plurality of bit cells of the bit cell array extends along the specific direction, and the memory array determines how an expansion associated with at least one of the first parameter and the second parameter is according to the specific direction.

Abstract: A touch point correction method is provided. Firstly, a first longitudinal base line of several longitudinal electrodes having a maximal energy is detected. Then, a right-side number of the longitudinal electrodes located in right side of the first longitudinal base line and sensing energy is detected. Then, a left-side number of the longitudinal electrodes located in left side of the longitudinal base line and sensing energy is detected. Then, a side corresponding to the largest of the right-side and left-side numbers is used as an inclined side, and a direction from the first longitudinal base line towards the inclined side is defined as an inclined direction. Then, a second longitudinal base line of the longitudinal electrodes having a sub-maximal energy is detected. Then, the sensing point is corrected by correction toward a reverse direction of the inclined direction according to ratio of the sub-maximal energy to the maximal energy.

Abstract: A touch point correction method is provided. Firstly, a first longitudinal base line of several longitudinal electrodes having a maximal energy is detected. Then, a right-side number of the longitudinal electrodes located in right side of the first longitudinal base line and sensing energy is detected. Then, a left-side number of the longitudinal electrodes located in left side of the longitudinal base line and sensing energy is detected. Then, a side corresponding to the largest of the right-side and left-side numbers is used as an inclined side, and a direction from the first longitudinal base line towards the inclined side is defined as an inclined direction. Then, a second longitudinal base line of the longitudinal electrodes having a sub-maximal energy is detected. Then, the sensing point is corrected by correction toward a reverse direction of the inclined direction according to ratio of the sub-maximal energy to the maximal energy.