Abstract: An apparatus for controlling a cylinder by a microfluidic stream includes a microtube, a first laser-driven photoacoustic microfluid pump (LDMP), and a fiber optic element. The microtube includes a fluid and a cylinder. The fiber optic element includes a first end and a second end. The first end is disposed on the first LDMP and the second end is disposed in a first end portion of the microtube. The first LDMP is configured to generate a directional fluidic jet from the fluid and to push the cylinder in a direction away from the second end of the fiber optic element.

Abstract: An apparatus for drug delivery is presented in accordance with aspects of the present disclosure. The apparatus includes a laser-driven photoacoustic microfluid pump (LDMP), an open tube capillary including a first end and a second end; the first end disposed on the LDMP, the open tube capillary configured to store a drug. The LDMP is configured to generate a fluidic jet from the drug and deliver the drug.

Abstract: Titania nanotube arrays are useful for phosphopeptide enrichment and separation. These highly ordered titania nanotube arrays are a low cost and highly effective alternative to the use of liquid chromatography mass spectrometry (LC-MS) methods using meoporous titania beads or particles. The highly ordered TiO2 nanotubes are grown on surfaces coated with Ti metal, or preferably on Ti wires, by methods that preferably include anodic oxidation.

Abstract: Titania nanotube arrays are useful for phosphopeptide enrichment and separation. These highly ordered titania nanotube arrays are a low cost and highly effective alternative to the use of liquid chromatography mass spectrometry (LC-MS) methods using meoporous titania beads or particles. The highly ordered Ti02 nanotubes are grown on surfaces coated with Ti metal, or preferably on Ti wires, by methods that preferably include anodic oxidation.

Abstract: Methods for fabricating metal nano-particle embedded enhancement substrates used for surface enhanced Raman spectroscopy (SERS) including ion implanting metal nano-particles into the substrate and etching the substrate to partially expose the metal nano-particles. The resulting material is useful as a SERS substrate for detection of molecules adsorbed on it by surface enhanced Raman spectroscopy.

Abstract: Methods for fabricating metal nano-particle embedded enhancement substrates used for surface enhanced Raman spectroscopy (SERS) including ion implanting metal nano-particles into the substrate and etching the substrate to partially expose the metal nano-particles. The resulting material is useful as a SERS substrate for detection of molecules adsorbed on it by surface enhanced Raman spectroscopy.

Abstract: Methods for fabricating metal nano-particle embedded enhancement substrates used for surface enhanced Raman spectroscopy (SERS) including ion implanting metal nano-particles into the substrate and etching the substrate to partially expose the metal nano-particles. The resulting material is useful as a SERS substrate for detection of molecules adsorbed on it by surface enhanced Raman spectroscopy.

Abstract: A portable and/or mobile detector for highly enriched uranium (HEU) and weapon grade plutonium (WGPu) is disclosed the detects HEU and/or WGPu based on neutron induced fission of a portion of the HEU and/or WGPu and detecting delayed neutron and/or ?-rays emission from delayed neutron emitters formed from the induced fission reactions.

Abstract: A method of preparing nanorod arrays using ion beam implantation is described that includes defining a pattern on a substrate and then implanting ions into the substrate using ion beam implantation. Next, a thin film is deposited on the substrate. During film growth, nanotrenches form and catalyze the formation of nanorods through capillary condensation. The resulting nanorods are aligned with the supporting matrix and are free from lattice and thermal strain effect. The density, size, and aspect ratios of the nanorods can be varied by changing the ion beam implantation and thin film growth conditions resulting in control of emission efficiency.

Abstract: This miniature neutron generator is for active detection of highly enriched uranium using a movable detection system. It is a small size, lightweight, low power consumption neutron generator with ease of operation and maintenance. The detector is based on a simplified ion source and ion transport system.

Abstract: Vacancies and dopant ions are introduced near the surface of a semiconductor layer structure. Implanted dopant ions which diffuse by an interstitialcy mechanism have diffusivity greatly reduced, which leads to a very low resistivity doped region and a very shallow junction.

Abstract: This invention is related to equipment and techniques for fast neutron activation analysis of explosives and /or other warfare agent. The techniques are based on 14 MeV fast neutrons from D-T fusion reaction, the kinematics of the nuclear reaction and fast coincidence between ?-particles of the D-T reaction and ?-quanta from fast neutron induced reactions. A fast neutron generator with effective target cooling and different operation modes provides high neutron yield, long life, and simple maintenance of the equipment and good geometric resolution of the directional neutron beam. High positional resolution of the directionally scanning neutron beam, high time resolution of the coincidence and high neutron yield provide the real time robust screen of explosives with high speed and/or high sensitivity, flexibility for big and small items and overall high probability of detection (PD) and low probability of false alarms (PFA). The remote video scan device also has zooming capability to change solid angle.

Abstract: This invention is related to equipment and techniques for fast neutron activation analysis of explosives and /or other warfare agent. The techniques are based on 14 MeV fast neutrons from D-T fusion reaction, the kinematics of the nuclear reaction and fast coincidence between ?-particles of the D-T reaction and ?-quanta from fast neutron induced reactions. A fast neutron generator with effective target cooling and different operation modes provides high neutron yield, long life, and simple maintenance of the equipment and good geometric resolution of the directional neutron beam. High positional resolution of the directionally scanning neutron beam, high time resolution of the coincidence and high neutron yield provide the real time robust screen of explosives with high speed and/or high sensitivity, flexibility for big and small items and overall high probability of detection (PD) and low probability of false alarms (PFA). The remote video scan device also has zooming capability to change solid angle.

Abstract: Vacancies and dopant ions are introduced near the surface of a semiconductor wafer. The dopant ions which diffuse by an interstitialcy mechanism have diffusivity greatly reduced, which leads to a very low resistivity doped region and a very shallow junction.

Abstract: A method of forming a stable unction on a microelectronic structure on a semiconductor wafer having a silicon surface layer on a substrate includes the following steps: implanting dopant ions into the surface layer; cleaning and oxidizing the surface layer, and twice annealing the wafer to recover a damaged silicon crystal structure of the surface layer resulting from the low energy ion implantation. The first annealing process uses a temperature range of 800° C. to 1200° C. for a duration from about a fraction of a second to less than about 1000 seconds, with a ramp-up rate of about 50° C./second to about 1000° C./second. The second annealing process uses a temperature range of 400° C. to 650° C. for a time period of from about 1 second to about 10 hours, and more preferably, from about 60 seconds to about 1 hour. Both annealing processes include cooling processes.

Abstract: A method of forming a stable junction on a microelectronic structure on a semiconductor wafer having a silicon surface layer on a substrate includes the following steps: implanting dopant ions into the surface layer; cleaning and oxidizing the surface layer, and twice annealing the wafer to recover a damaged silicon crystal structure of the surface layer resulting from the low energy ion implantation. The first annealing process uses a temperature range of 800° C. to 1200° C. for a duration from about a fraction of a second to less than about 1000 seconds, with a ramp-up rate of about 50° C./second to about 1000° C./second. The second annealing process uses a temperature range of 400° C. to 650° C. for a time period of from about 1 second to about 10 hours, and more preferably, from about 60 seconds to about 1 hour. Both annealing processes include cooling processes.

Abstract: Vacancies and dopant ions are introduced near the surface of a semiconductor wafer. The dopant ions which diffuse by an interstitialcy mechanism have diffusivity greatly reduced, which leads to a very low resistivity doped region and a very shallow junction.

Abstract: A method of forming a stable junction on a microelectronic structure on a semiconductor wafer having a silicon surface layer on a substrate includes the following steps: implanting dopant ions into the surface layer; cleaning and oxidizing the surface layer, and twice annealing the wafer to recover a damaged silicon crystal structure of the surface layer resulting from the low energy ion implantation. The first annealing process uses a temperature range of 800° C. to 1200° C. for a duration from about a fraction of a second to less than about 1000 seconds, with a ramp-up rate of about 50° C./second to about 1000° C./second. The second annealing process uses a temperature range of 400° C. to 650° C. for a time period of from about 1 second to about 10 hours, and more preferably, from about 60 seconds to about 1 hour. Both annealing processes include cooling processes.

Abstract: Thermal neutron irradiation of superconducting body compositions into which Li or B has been incorporated as a unit cell external or internal dopant introduces by the nuclear reaction of the dopant pinning centers which substantially improve the critical current density of the body.

Abstract: Trapped field magnets (TFMS) on an NMR logging tool are used to produce a static magnetic field in a formation surrounding a borehole. The TFMs are made of material having a high Tc, so that the magnetic field can be sustained for the duration of the well logging by enclosing the TFMs within a cryostat containing liquid nitrogen as a coolant. By using the TFMs, the field strength within this region is much higher than is attainable with conventional magnets, giving an improved signal to noise (S/N) ratio for the NMR signals. The magnetic field strength within the TFMs is kept at a low enough value that instability problems associated with these materials do not arise. The field strength may be selected based upon knowledge of the resistivity and dielectric constant of the formation and the associated skin depth for electromagnetic signals. This makes it possible to use the TFMs in both wireline and measurement while drilling (MWD) environments.