Abstract: A semiconductor component including a Wheatstone bridge rectifying circuit and a transistor is provided, wherein the Wheatstone bridge rectifying circuit and the transistor are formed on a same growth substrate, and wherein the Wheatstone bridge rectifying circuit includes a first rectifying diode; a second rectifying diode electrically connected to the first rectifying diode; a third rectifying diode electrically connected to the second rectifying diode; and a fourth rectifying diode electrically connected to the third rectifying diode.

Abstract: The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.

Abstract: A light emitting device including a light emitting component is provided, wherein said light emitting comprising an integrated light emitting diode and a semiconductor field effect transistor. The semiconductor field effect transistor may prevent situations such as overheating and voltage instability by controlling a current passing through the light emitting diode as well as enhancing the ability to withstand electrostatic discharge and reducing cost of the light emitting device in multiple aspects.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting diode, a metal bump, and a reflective insulation layer. The light-emitting diode includes an active layer, an insulation layer formed on the active layer and having a side surface, and a pad electrically connected to the active layer. The metal bump is formed on the pad. The reflective insulation layer covers the side surface.

Abstract: A semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) chips. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An illumination device includes the semiconductor light emitting element and a supporting base. The semiconductor light emitting element is disposed on the supporting base, and an angle is formed between the semiconductor light emitting element and the supporting base.

Abstract: A light-emitting diode (LED) is provided. An LED die includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first electrode and a second electrode. At least a part of the first semiconductor is exposed from the light emitting layer and the second semiconductor layer. The first electrode and the second electrode is disposed on top of the exposed first semiconductor layer and the second semiconductor layer respectively. At least two metal pads are disposed on top of the first electrode and the second electrode of the LED die respectively. Each of the metal pads has a side surface. A fluorescent layer is disposed on a surface of the LED die. The fluorescent layer directly contacts with the side surfaces of the metal pads and fills a gap between the metal pads.

Abstract: A method of manufacturing an oxynitride phosphor is revealed. A precursor is sintered under 0.1-1000 MPa nitrogen pressure for synthesis of an oxynitride phosphor. The general formula of the oxynitride phosphors is Ba3-XSi6O12N2:EuxBa3-XSi6O6N6:Eux or Ba3-XSi6O9N4:Eux (0.00001?x?5; 0.00001). Thus pure phosphor can be mass-produced.

Abstract: The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.

Abstract: A phase-locked loop circuit using a multi-curve voltage-controlled oscillator (VCO) having a set of operating curves, each operating curve corresponding to a different frequency range over a control voltage range. The phase-locked loop circuit includes a digital control circuit configured to generate a curve select signal using a closed loop curve search operation to select one of the operating curves in the multi-curve VCO, the selected operating curve being used by the VCO to generate an output signal with an output frequency being equal or close to a target frequency of the phase-locked loop. In one embodiment, the digital control circuit implements a binary jump method and an operating curve is selected when the operating curve has an output frequency meeting the target frequency with the control voltage being within a first voltage range being a narrowed and centered voltage range within the control voltage range.

Abstract: A light emitting device including a light emitting component is provided, wherein said light emitting comprising an integrated light emitting diode and a semiconductor field effect transistor. The semiconductor field effect transistor may prevent situations such as overheating and voltage instability by controlling a current passing through the light emitting diode as well as enhancing the ability to withstand electrostatic discharge and reducing cost of the light emitting device in multiple aspects.

Abstract: A light-emitting diode (LED) chip including a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on said active layer; at least one indentation comprising a bottom part extending downward to reach the first semiconductor layer and exposing the first semiconductor layer; a first metal layer disposed on the second semiconductor layer, connecting to the first semiconductor layer at the bottom part of the indention; and an first insulating layer deposited on the second semiconductor layer and between the first metal layer and the second semiconductor layer to isolate the first metal layer from the second semiconductor layer.

Abstract: The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.

Abstract: A light-emitting diode (LED) chip comprising a first semiconductor layer; an active layer disposed on said first semiconductor layer; a second semiconductor layer disposed on said active layer; metal layers which disposed on said second semiconductor layer and overlapped with each other indirectly, comprising a first metal layer which connected to a first electrode deposited on said first semiconductor, and a second metal layer which connected to a transparent conductive layer and a second electrode deposited on said second semiconductor layer; wherein said second metal layer deposited on said first metal layer which further connected to said first semiconductor layer through an indentation.

Abstract: A light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) chips. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED chips are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED chips. Each of the LED chips includes a first electrode and a second electrode. Light emitted from at least one of the LED chips passes through the transparent substrate and emerges from the second main surface. An illumination device includes the light emitting element and a supporting base. The light emitting element is disposed on the supporting base, and an angle is formed between the light emitting element and the supporting base.

Abstract: A capacitor structure is provided, which includes a conductive substrate, a first dielectric layer, and a first metal layer. The conductive substrate includes a first surface and at least one first concave located on the first surface. The first dielectric layer covers the first surface and the first concave. The first metal layer covers the first dielectric layer, wherein the first dielectric layer and the first metal layer respectively have concave structures corresponding to the first concave. A stack-type capacitor structure is also provided.

Abstract: A phase-locked loop circuit using a multi-curve voltage-controlled oscillator (VCO) having a set of operating curves, each operating curve corresponding to a different frequency range over a control voltage range. The phase-locked loop circuit includes a digital control circuit configured to generate a curve select signal using a closed loop curve search operation to select one of the operating curves in the multi-curve VCO, the selected operating curve being used by the VCO to generate an output signal with an output frequency being equal or close to a target frequency of the phase-locked loop. In one embodiment, the digital control circuit implements a binary jump method and an operating curve is selected when the operating curve has an output frequency meeting the target frequency with the control voltage being within a first voltage range being a narrowed and centered voltage range within the control voltage range.

Abstract: The present invention relates to a light emitting apparatus comprising at least one light emitting device and a support mechanism. The light emitting device includes a transparent substrate which light can pass through; at least one LED chip emitting light omni-directionally is disposed on one surface of the substrate, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. The support mechanism is coupled to the light emitting device; a first angle is formed between the substrate and the support mechanism. According to the present invention, the light emitting apparatus using LED chips can provide sufficient lighting intensity and uniform lighting performance.