Abstract: The present disclosure generally relates to memory devices and methods of forming the same. More particularly, the present disclosure relates to resistive random-access (ReRAM) memory devices incorporating reference cells for achieving high sensing yield. The present disclosure provides a memory device including a main cell structure including a switching element arranged between a pair of conductors, and a reference cell structure electrically coupled to the main cell structure. The reference cell structure includes a switching element arranged between a pair of conductors, in which the switching element of the reference cell structure has a dimension that is different from a dimension of the switching element of the main cell structure.

Abstract: A source driver system includes a scan driver and a data driver. The data driver has a signal controller, a data bus, a connector and a plurality of data driver units. The signal controller is connected with the connector with via the data bus to form a first connection relationship such that the data bus is capable of transmitting control signals from the signal controller to the connector. The connector connects with the data driver units via the data bus to form a second connection relationship such that the data bus is capable of transmitting the control signals from the connector to the corresponding data driver units. In a preferred embodiment, the data bus is further arranged to form a third connection relationship among the data driver units such that the data bus is capable of communicating a serial connection signal among the data driver units.