Abstract: The present disclosure provides a control method applied to a first electronic device and a second electronic device in a physical environment. The first electronic device and the second electronic device are configured to communicate with each other through a first wireless connection established between the first electronic device and the second electronic device. The control method includes: by at least one of the first electronic device and the second electronic device, determining whether to update a map of the physical environment; and in response to a determination to update the map of the physical environment, establishing a second wireless connection different from the first wireless connection between the first electronic device and the second electronic device, wherein the second wireless connection is configured to transmit a map updated data, and the map updated data is configured to update the map of the physical environment.

Abstract: A flexible circuit board includes liquid crystal polymer (LCP) layers and metal layers including circuit routes. Each of the LCP layers includes via structures. The metal layers and the LCP layers are alternatively stacked to form a multi-layer structure. Adjacent metal layers are electrically connected through the via structures. Some via structures of different LCP layers are substantially aligned with one another to form a stack of via structures. Each of the via structures includes openings filled with conductive material. The size of the opening fulfils the following equation: Vb?cos(Bh/Vh)*Vt/k*2, where Vb is a diameter of a smaller aperture, Vt is a diameter of a bigger aperture, Vh is a combined thickness of a LCP layer and a metal layer, Bh is a thickness of a LCP layer and k is a tensile modulus.

Abstract: A method of blind spot detection is provided. The method of blind spot detection is used for a vehicle including a first vehicle body and a second vehicle body dragged by the first vehicle body. The method of blind spot detection comprises the following steps: obtaining a turning angle information of the second vehicle body relative to the first vehicle body by a first sensor while the vehicle is moving; determining a predetermined information related to the vehicle and/or a second sensor; dynamically defining a blind spot area around the vehicle according to the turning angle information and the predetermined information; and receiving a sensing signal regarding an object around the vehicle from the second sensor to determine whether the object is located in the blind spot area.

Abstract: A chemical vapor phase growth apparatus for growing films on substrates comprises of a thermostated lower heating element, including a plurality of carrier disks thereon, wherein each carrier disk further includes a plurality of substrates thereon for film deposition; a plurality of partitions, disposed above the lower heating element to define a plurality of sub-reaction chambers; a plurality of upper heating elements made of a plurality of thermostated upper heating units, disposed over the lower heating element by a gap to form reaction zones in each sub-reaction chamber; a gas inlet installed in each sub-reaction chamber to provide at least one precursor into the sub-reaction chamber; and a gas outlet installed in the chemical vapor phase growth apparatus to exhaust the gases.

Abstract: The present invention relates to a patterned opto-electrical substrate, comprising a substrate, the substrate has a first patterned structure, a spacer region and a second patterned structure, wherein the second patterned structure is formed on one or both of the first patterned structure and the spacer region, and the first patterned structure is a micron-scale protruding structure or a micron-scale recessing structure, while the second patterned structure is a submicron-scale recessing structure. The present invention also relates to a method for manufacturing the aforementioned patterned opto-electrical substrate and light emitting diodes having the aforementioned patterned opto-electrical substrate.

Abstract: The present invention relates to a patterned opto-electrical substrate, comprising a substrate, the substrate has a first patterned structure, a spacer region and a second patterned structure, wherein the second patterned structure is formed on one or both of the first patterned structure and the spacer region, and the first patterned structure is a micron-scale protruding structure or a micron-scale recessing structure, while the second patterned structure is a submicron-scale recessing structure. The present invention also relates to a method for manufacturing the aforementioned patterned opto-electrical substrate and light emitting diodes having the aforementioned patterned opto-electrical substrate.

Abstract: A reactor for film deposition having a first heating unit and the second heating units is described. The temperature of each heating unit is controlled individually by heating and/or cooling means. The first heating unit and the second heating unit are disposed face-to-face to each other to form a reaction region therein, and their inner sides are placed with an inclined angle. At least one substrate is disposed on the inner surface of the first heating unit. The temperature of the second heating unit can be adapted to a temperature higher than the temperature of the first heating unit to improve the thermal decomposition efficiency of input reactants so that a low-temperature film deposition can be accomplished.

Abstract: A structure of multi-wavelength light emitting device comprises multi-stacked active layer structure. Each stacked layer comprises lower energy bandgap well 4 and higher energy bandgap barrier layer 3 wherein at least one stacked layer in the device contains nanoparticles. As a result, the emitting wavelengths of the multi-stacked active layer structure consist parts (or all) of the emitting wavelengths come from the stack layers containing nanoparticles, and parts (or all) of the emitting wavelengths come from the stack layers not containing nanoparticles. In another embodiment, parts (or all) of the emitting wavelengths of the multi-stacked active layer structure can be also used to trigger one or more phosphorescences from the phosphors, thus the emitting wavelengths of such a phosphors converted light emitting device may come partially from the multi-stacked active layer itself and partially (or all) from the phosphors.

Abstract: The automatic audio playing device mainly contains a hollow body member, a control unit housed inside the body member, a plug member and a speaker as integral parts of the body member, an adaptor, and a remote controller. The control unit has a radio reception circuit for receiving control signals from the remote controller. The control signal is forwarded to a signal processing circuit, which in turn triggers a microprocessor in accordance with the control signals. The microprocessor instructs an audio playing circuit to play an appropriate digital audio file via the speaker. The plug member could be plugged into a conventional lamp socket for a light bulb, or the plug member is first plugged into the adaptor and the adaptor is then plugged into a conventional wall socket. Once this is done, the automatic audio playing device could be turned on and off by switches of existing wiring.

Abstract: Process for fabricating self-assembled nanoparticles on buffer layers without mask making and allowing for any degree of lattice mismatch; that is, binary, ternary or quaternary nanoparticles comprising Groups III-V, II-VI or IV-VI. The process includes a first step of applying a buffer layer, a second step of turning on the purge gas to modulate the first reactant to the lower first flow rate, then the second reactant is supplied to the buffer layer to form a metal-rich island on the buffer layer, and a third step of turning on purge gas again to modulate the first reactant to the higher second flow rate onto the buffer layer. On the metal-rich island is formed the nanoparticles of the binary, ternary or quaternary III-V, II-VI and IV-IV semiconductor material. This is then recrystallized under the first reactant flow at high temperature forming high quality nanoparticles.

Abstract: A structure of multi-wavelength light emitting device comprises multi-stacked active layer structure. Each stacked layer comprises lower energy bandgap well 4 and higher energy bandgap barrier layer 3 wherein at least one stacked layer in the device contains nanoparticles. As a result, the emitting wavelengths of the multi-stacked active layer structure consist parts (or all) of the emitting wavelengths come from the stack layers containing nanoparticles, and parts (or all) of the emitting wavelengths come from the stack layers not containing nanoparticles. In another embodiment, parts (or all) of the emitting wavelengths of the multi-stacked active layer structure can be also used to trigger one or more phosphorescences from the phosphors, thus the emitting wavelengths of such a phosphors converted light emitting device may come partially from the multi-stacked active layer itself and partially (or all) from the phosphors.

Abstract: Process for fabricating self-assembled nanoparticles on buffer layers without mask making and allowing for any degree of lattice mismatch; that is, binary, ternary or quaternary nanoparticles comprising Groups III-V, II-VI or IV-VI. The process includes a first step of applying a buffer layer, a second step of turning on the purge gas to modulate the first reactant to the lower first flow rate, then the second reactant is supplied to the buffer layer to form a metal-rich island on the buffer layer, and a third step of turning on purge gas again to modulate the first reactant to the higher second flow rate onto the buffer layer. On the metal-rich island is formed the nanoparticles of the binary, ternary or quaternary III-V, II-VI and IV-IV semiconductor material. This is then recrystallized under the first reactant flow at high temperature forming high quality nanoparticles.