Abstract: The disclosure provides an augmented reality (AR) device, a notebook, and smart glasses. The AR device includes a laser source, a spatial light modulator (SLM), and a hologram optical element (HOE). The laser source provides a coherent laser ray. The SLM provides a diffraction pattern solely corresponding to the coherent laser ray. When the SLM receives the coherent laser ray, the diffraction pattern diffracts the coherent laser ray as a hologram in response to the coherent laser ray. The HOE provides a concave mirror effect merely in response to a wavelength of the coherent laser ray, wherein the HOE receives the hologram and magnifies the hologram as a stereoscopic virtual image.

Abstract: A silicon carbide (SiC) wafer and a positioning-edge processing method thereof are provided. The SiC wafer has a first flat and a second flat. A first rounded corner is respectively disposed at a connection between two ends of the first flat and an edge of the SiC wafer, wherein the first rounded corner has a radius of 1-10 mm. A second rounded corner is respectively disposed at a connection between two ends of the second flat and the edge of the SiC wafer, wherein the second rounded corner has a radius of 1-10 mm. Since the rounded corners at the connections between two ends of the flats and the wafer edges have optimum radii, the yield and quality of the wafer processing may be improved.

Abstract: A backside illumination global shutter pixel is disposed in a substrate having a first surface and a second surface and includes an isolation structure having a deep trench isolation pattern, a storage node, and a photoelectric conversion element. The deep trench isolation pattern has a channel and defines a first region and a second region connected with each other by the channel. The storage node is disposed in the second region. The photoelectric conversion element has a main photoelectric conversion portion disposed in the first region and an extending photoelectric conversion portion extended from the main photoelectric conversion portion through the channel to the second region. The extending photoelectric conversion portion is disposed between the second surface and the storage node. A backside illumination global shutter sensor including a plurality of backside illumination global shutter pixels is also provided.

Abstract: An image sensor including a substrate, a deep well layer, multiple first sensing units, second sensing units and third sensing units is provided. The first, the second and the third sensing units are located between a first surface and the deep well layer. A ratio between an area of a part of the deep well layer under each first sensing unit and an area of each first sensing unit is a first area ratio. A ratio between an area of a part of the deep well layer under each second sensing unit and an area of each second sensing unit is a second area ratio. A ratio between an area of a part of the deep well layer under each third sensing unit and an area of each third sensing unit is a third area ratio. The first area ratio is greater than the second and the third area ratios.

Abstract: An image sensor including a substrate, a deep well layer, multiple first sensing units, second sensing units and third sensing units is provided. The first, the second and the third sensing units are located between a first surface and the deep well layer. A ratio between an area of a part of the deep well layer under each first sensing unit and an area of each first sensing unit is a first area ratio. A ratio between an area of a part of the deep well layer under each second sensing unit and an area of each second sensing unit is a second area ratio. A ratio between an area of a part of the deep well layer under each third sensing unit and an area of each third sensing unit is a third area ratio. The first area ratio is greater than the second and the third area ratios.

Abstract: A hinge capable of being positioned at any angle, comprises a male hinge 1 having a penetrating axial hole 11 with a non-round cross section; a female hinge 2 having a receiving opening 20 for receiving the male hinge 1; each of two sides of the receiving opening 20 has a respective penetrating hole 21, 22; one penetrating hole 21 of the male hinge 1 having an inner thread 23 and a friction surface 24; a pivot shaft 3 capable of passing through the male hinge 1 and female hinge 2; a screwing element 4 positioned at one end of the pivot shaft 3; the screwing element 4 being coaxial to and non-rotatable with respect to the pivot shaft 3; the screwing element 4 being threaded to the inner thread; the pivot shaft 3 having a damping unit 32 which is adhered to the friction surface 24; the pivot shaft 3 being formed with an interact section 31; a cross section of the interact section 31 being identical to that the penetrating hole 11 of the male hinge 1.

Abstract: A structure of a silicon photodetector and a method for forming the same by using the conventional CMOS semiconductor manufacturing process and micro-electromechanical system manufacturing process, in which the micro-electromechanical system manufacturing process (lateral etching process) is applied for elimination of effect and interference caused by a substrate of the silicon photodetector after optical absorption thereof, thereby greatly improving the response speed of the silicon photodetector. This can be done only by applying the lateral etching process onto a portion of the substrate of the silicon photodetector after the semiconductor manufacturing process is finished, through which slow diffusion carriers produced from the optical absorption of the substrate can be effectively reduced and the response speed is thus enhanced.