Abstract: A high voltage device with constant current source and the manufacturing method thereof. The device includes a P type silicon substrate (1), an oxide layer (6), a drain metal (2), a source metal (3), a gate metal (4), a P+substrate contact region (51), a N+drain region (52), an N+source region (53), an N?channel region (54) connecting the said N+drain region (52) and N+source region (53), and an N?drain region (92) enveloping the said N+drain region (52); the drain metal (2) fills drain through hole (82) and connects the N+drain region (52); the source metal (3) fills source through hole (83), and connects the N+source region (53) and P+substrate contact region (51); the source metal (3) and gate metal (4) are electrically connected by connecting metal (34). The manufacturing method includes steps of forming N+drain region, N+source region, N?drain region, P+substrate contact region, N?drain region and metal layer.

Abstract: A constant current source device with over current and over voltage protection function can be directly applied to AC power and DC power, and a method for manufacturing the constant current source device is also disclosed. The device includes a silicon substrate (1), an oxide layer (6) formed in front of the silicon substrate (1), a drain metal (2), a source metal (3) and a gate metal (4) located in front of the oxide layer (6), a P+ guard ring (50), an N+ drain region (52) and an N+ source region (53) implanted in the silicon substrate (1), a P+ substrate region (51) located in the N+ source region (53), and an N? channel region (54) connecting the N+ drain region (52) with the N+ source region (53). The drain metal (2) and the source metal (3) are separately connected with the N+ drain region (52), the N+ source region (53) and the P+ substrate region (51). The source metal (3) and the gate metal (4) are electrically connected through a connection metal (7).

Abstract: The present invention discloses a high power LED lamp circuit with a fan provides advantages such as simple structure, high efficiency, low power consumption, energy saving, and longer lifetime. The LED lamp circuit comprises a rectifying-filtering circuit (1), an LED load (3), an output terminal (A) and a grounding terminal (G) for providing a DC power generated by passing an AC power through the rectifying-filtering circuit (1), the high power LED lamp circuit with a fan further comprises a constant current source (4), a fan driving circuit (6); the lamp circuit is formed by cascading the LED load (3), the constant current source (4) between the output terminal (A) and the grounding terminal (G), the LED lamp circuit is widely applicable in various kinds of LED lamps.

Abstract: A high voltage device with constant current source and the manufacturing method thereof. The device includes a P type silicon substrate (1), an oxide layer (6), a drain metal (2), a source metal (3), a gate metal (4), a P+substrate contact region (51), a N+drain region (52), an N+source region (53), an N?channel region (54) connecting the said N+drain region (52) and N+source region (53), and an N?drain region (92) enveloping the said N+drain region (52); the drain metal (2) fills drain through hole (82) and connects the N+drain region (52); the source metal (3) fills source through hole (83), and connects the N+source region (53) and P+substrate contact region (51); the source metal (3) and gate metal (4) are electrically connected by connecting metal (34). The manufacturing method includes steps of forming N+drain region, N+source region, N?drain region, P+substrate contact region, N?drain region and metal layer.

Abstract: The present invention discloses a constant current source circuit with energy saving and over voltage protection to provide a constant current source circuit with less elements, simple circuitry, energy saving and over voltage protection. The present invention includes a regulating circuit (1), a filtering capacitor (2) and a load (3), and further includes a depletion mode FET (field effect transistor) (4). The present invention can generally be applied to the lamps, wherein the load are high voltage LED (light emitting diode) elements or a lamp composed of several LED elements serial connected or serial-parallel connected. This invention can also be applied to the load that is an electronic circuit with high working voltage. This invention can also be applied to the load that is a DC motor with high working voltage. This invention can also be applied to the load that is an electrical thermal load with high resistivity.

Abstract: The present invention discloses a constant current source device with over current and over voltage protection function that can be directly applied to AC power and DC power, and a method for manufacturing the constant current source device is also disclosed. The device includes a silicon substrate (1), an oxide layer (6) formed in front of the silicon substrate (1), a drain metal (2), a source metal (3) and a gate metal (4) located in front of the oxide layer (6), a P+ guard ring (50), an N+ drain region (52) and an N+ source region (53) implanted in the silicon substrate (1), a P+ substrate region (51) located in the N+ source region (53), and an N? channel region (54) connecting the N+ drain region (52) with the N+ source region (53). The drain metal (2), and source metal (3) are separately connected with the N+ drain region (52), the N+ source region (53) and the P+ substrate region (51). The source metal (3) and the gate metal (4) are electrically connected through a connection metal (7).

Abstract: A planar flip bonded & small chips integrated LED chip comprising a plurality of LED bare chips and silicon substrates; the LED bare chip comprising a substrate, a N type epitaxial layer, and a P type epitaxial layer; the silicon substrate having two separated deposited metal layers facing each LED bare chip; the P type epitaxial layer and the N type epitaxial layer being separately flip bonded on the metal layers via solder balls; and is characterized in that: the contact areas of the metal layers and the silicon substrate separately has a doped isolating layer, an isolating layer is disposed between the metal layer corresponding to each LED bare chip and the silicon substrate, the plurality of LED bare chips are connected via the metal layers and forms an anode electrode and a cathode electrode.

Abstract: A staged selection type Christmas light controller circuit is provided. The light controller includes a rectifier, a current-limiter, a voltage regulator, a separator, a power stage generator, a selector switch, an oscillator, an integrated circuit controller, a driver, and a plurality of Christmas lights. The rectifier, the current-limiter, and the voltage regulator are connected in series with a power plug for providing DC voltage to the power input pin of the integrated circuit controller. A separator circuit is connected with the output end of the rectifier or the current-limiter and is coupled to the selection trigger pin of the integrated circuit controller through the power stage generator and the selector switch. An oscillator is coupled to the integrated circuit controller and the Christmas light sets are coupled to the controller through a driver.